Apr-22-2004
1
BAT62...
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
BAT62
BAT62-09S
BAT62-02L
BAT62-02W
BAT62-03W
BAT62-08S
BAT62-07W
BAT62-07L4
1
D 2
2
3
4
D 1
1
D 1
2
3
4
5
6
D 2
1
D 1
2
3
4
5
6
D 2
D 3
1
2
1
D 2
2
3
4
D 1
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Configuration
L
S
(nH)
Marking
BAT62
BAT62-02L*
BAT62-02W
BAT62-03W
BAT62-07L4
BAT62-07W
BAT62-08S
BAT62-09S*
SOT143
TSLP-2-1
SCD80
SOD323
TSLP-4-4
SOT343
SOT363
SOT363
anti-parallel pair
single, leadless
single
single
parallel pair, leadless
parallel pair
parallel triple
parallel pair, high isolation
2
0.4
0.6
1.8
0.4
1.8
1.6
1.6
62s
L
62
L
62
62s
62s
69s
*Preliminary Data
Apr-22-2004
2
BAT62...
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
20
mA
Total power dissipation
BAT62, T
S
85 C
BAT62-02L, -07L4, -03W, T
S
108 C
BAT62-02W, T
S
109 C
BAT62-07W, T
S
103 C
BAT62-08S, -09S, T
S
105 C
P
tot
100
100
100
100
100
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAT62
BAT62-02L, -07L4, -03W
BAT62-02W
BAT62-07W
BAT62-08S
BAT62-09S
R
thJS
650
420
410
470
450
tbd
K/W
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 40 V
I
R
-
-
10
A
Forward voltage
I
F
= 2 mA
V
F
-
0.58
1
V
Forward voltage matching
2)
I
F
= 2 mA
V
F
-
-
20
mV
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2
VF is the difference between lowest and highest V
F
in a multiple diode component.
Apr-22-2004
3
BAT62...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
0.35
0.6
pF
Differential resistance
V
R
= 0 V, f = 10 kHz
R
0
-
225
-
k
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