Jun-03-2003
1
BAW56...
Silicon Switching Diode
For high-speed switching applications
Common anode configuration
BAW56S
BAW56U
BAW56
BAW56T
BAW56W
!
,
,
,
!
"
#
$
,
, !
, "
Type
Package
Configuration
Marking
BAW56
BAW56S
BAW56T
BAW56U
BAW56W
SOT23
SOT363
SC75
SC74
SOT323
common anode
double common anode
common anode
double common anode
common anode
A1s
A1s
A1s
A1s
A1s
Jun-03-2003
2
BAW56...
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
80
V
Peak reverse voltage
V
RM
85
Forward current
I
F
200
mA
Surge forward current, t = 1 s
I
FS
4.5
A
Total power dissipation
BAW56, T
S
31C
BAW56S, T
S
85C
BAW56T, T
S
104C
BAW56U, T
S
90C
BAW56W, T
S
103C
P
tot
330
250
250
250
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAW56
BAW56S
BAW56T
BAW56U
BAW56W
R
thJS
360
260
185
240
190
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Jun-03-2003
3
BAW56...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
85
-
-
V
Reverse current
V
R
= 70 V
V
R
= 25 V, T
A
= 150 C
V
R
= 70 V, T
A
= 150 C
I
R
-
-
-
-
-
-
0.15
30
50
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
-
2
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA,
R
L
= 100
t
rr
-
-
4
ns
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05, t
r
= 0.6ns,
R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns, C
1pF
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