Jul-09-2003
1
BB439...
Silicon Variable Capacitance Diode
For VHF tuned circuit applications
High figure of merit
BB439
1
2
Type
Package
Configuration
L
S
(nH)
Marking
BB439
SOD323
single
1.8
white 2
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
28
V
Peak reverse voltage
( R
5k )
V
RM
30
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Jul-09-2003
2
BB439...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 28 V
V
R
= 28 V, T
A
= 85 C
I
R
-
-
-
-
20
200
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
C
T
-
31.5
26.5
4.3
43
34.5
29
5.1
-
37.5
31.5
6
pF
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
C
T2
/C
T25
6
6.9
8
Capacitance ratio
V
R
= 3 V, V
R
= 25 V, f = 1 MHz
C
T3
/C
T25
5
5.8
6.5
Capacitance matching
1)
V
R
= 3 V, V
R
= 25 V, f = 1 MHz
C
T
/C
T
-
-
3
%
Series resistance
V
R
= 10 V, f = 100 MHz
r
S
-
0.35
0.5
Figure of merit
V
R
= 3 V, f = 50 MHz
V
R
= 25 V, f = 200 MHz
Q
-
-
280
600
-
-
1
For details please refer to Application Note 047.
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