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Электронный компонент: BB914E6433

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Dec-04-2002
1
BB914...
Silicon Variable Capacitance Diode
For FM radio tuner with extended
frequency band
High tuning ratio at low supply voltage (car radio)
Monolitic chip (common cathode)
for perfect dual diode tracking
Good linearity for C- V curve
High figure of merit
BB914
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BB914
SOT23
common cathode
1.8
SM
Maximum Ratings
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
18
V
Peak reverse voltage
( R
5k )
V
RM
20
Forward current
I
F
50
mA
Operating temperature range
T
op
-55 ... 125
C
Storage temperature
T
stg
-55 ... 150
Dec-04-2002
2
BB914...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 16 V
V
R
= 16 V, T
A
= 85 C
I
R
-
-
-
-
20
200
nA
AC Characteristics
Diode capacitance
V
R
= 2 V, f = 1 MHz
V
R
= 8 V, f = 1 MHz
C
T
42.5
17.6
43.75
18.7
45
19.75
pF
Capacitance ratio
V
R
= 2 V, V
R
= 8 V, f = 1 MHz
C
T2
/C
T8
2.28
2.34
2.42
Capacitance matching
1)
V
R
= 2 V, V
R
= 8 V, f = 1 MHz
C
T
/C
T
-
-
1.5
%
Series resistance
V
R
= 2 V, f = 100 MHz
r
S
-
0.28
-
1
For details please refer to Application Note 047.
Dec-04-2002
3
BB914...
Diode capacitance C
T
=
(V
R
)
f
= 1MHz
0
1
2
3
4
5
6
7
8
V
10
V
R
0
10
20
30
40
50
60
70
80
pF
100

C
T
Capacitance ratio C
Tref
/C
T
=
(V
R
)
f
= 1MHz
0
1
2
3
4
5
6
7
8
V
10
V
R
0
0.5
1
1.5
2
2.5
3
3.5
4
-
5
C
Tref
/
C
T
1V
2V
3V