Jul-25-2003
1
BBY58...
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-07L4
BBY58-06W
1
2
1
D 2
2
3
4
D 1
3
1
D 2
2
D 1
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BBY58-02L*
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4*
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
TSLP-4-4
single, leadless
single
single
single
common cathode
common anode
parallel pair, leadless
0.4
0.6
0.6
0.6
1.4
1.4
0.4
88
8
88
8 yel.
B5s
B6s
B8
*Preliminary
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
10
V
Forward current
I
F
20
mA
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
Jul-25-2003
2
BBY58...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R
= 8 V
V
R
= 8 V, T
A
= 85 C
I
R
-
-
-
-
10
100
nA
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
V
R
= 6 V, f = 1 MHz
C
T
17.5
11.4
7.8
5.5
3.8
18.3
12.35
8.6
6
4.7
19.3
13.3
9.3
6.6
5.5
pF
Capacitance ratio
V
R
= 1 V, V
R
= 3 V, f = 1 MHz
C
T1
/C
T3
1.9
2.15
2.4
-
Capacitance ratio
V
R
= 1 V, V
R
= 4 V, f = 1 MHz
C
T1
/C
T4
2.7
3.05
3.5
Capacitance ratio
V
R
= 4 V, V
R
= 6 V, f = 1 MHz
C
T4
/C
T6
1.15
1.3
1.45
Series resistance
V
R
= 1 V, f = 470 MHz, BBY58-02L, -07L4
V
R
= 1 V, f = 470 MHz, all other
r
S
-
-
0.3
0.25
-
-
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