BC807, BC808
1
Nov-29-2001
PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Comlementary types: BC817, BC818 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
5As
5Bs
5Cs
5Es
5Fs
5Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
BC807
BC808
Unit
Collector-emitter voltage
V
CEO
45
25
V
Collector-base voltage
V
CBO
50
30
Emitter-base voltage
V
EBO
5
5
mA
DC collector current
500
I
C
Peak collector current
1
A
I
CM
Base current
mA
100
I
B
Peak base current
200
I
BM
Total power dissipation
, T
S
= 79 C
P
tot
mW
330
Junction temperature
150
C
T
j
T
stg
Storage temperature
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
215
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BC807, BC808
2
Nov-29-2001
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BC807
BC808
V
(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
BC807
BC808
V
(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 25 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 25 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
50
A
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 100 mA, V
CE
= 1 V
h
FE
-grp. 16
h
FE
-grp. 25
h
FE
-grp. 40
h
FE
100
160
250
160
250
350
250
400
630
-
DC current gain 1)
I
C
= 500 mA, V
CE
= 1 V
h
FE
40
-
-
Collector-emitter saturation voltage1)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
0.7
V
Base-emitter saturation voltage 1)
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
-
-
1.2
1) Pulse test: t
300
s, D = 2%
BC807, BC808
3
Nov-29-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
f
T
Transition frequency
I
C
= 50 mA, V
CE
= 5 V, f = 100 MHz
-
-
200
MHz
C
cb
-
10
pF
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
-
C
eb
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
-
60
-
BC807, BC808
4
Nov-29-2001
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
EHP00210
0
3
10
mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00212
-6
0
10
5
D =
5
10
1
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot max
tot
P
DC
P
p
t
t
p
=
D
T
t
p
T
Collector cutoff current I
CBO
= f(T
A
)
V
CBO
= 25V
0
10
EHP00213
A
T
150
0
5
10
CBO
nA
50
100
1
10
2
10
4
10
C
typ
max
10
3
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