BC 817W, BC 818W
1
Oct-20-1999
NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 807W, BC 808W (PNP)
1
3
VSO05561
2
Type
Marking
Pin Configuration
Package
BC 817-16W
BC 817-25W
BC 817-40W
BC 818-16W
BC 818-25W
BC 818-40W
6As
6Bs
6Cs
6Es
6Fs
6Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter
Symbol
BC 817W
BC 818W
Unit
Collector-emitter voltage
V
CEO
45
25
V
Collector-base voltage
V
CBO
50
30
Emitter-base voltage
V
EBO
5
5
DC collector current
I
C
500
mA
Peak collector current
I
CM
1
A
Base current
mA
100
I
B
Peak base current
I
BM
200
Total power dissipation
,
T
S
= 130 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction ambient
1)
R
thJA
215
K/W
Junction - soldering point
R
thJS
80
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
BC 817W, BC 818W
2
Oct-20-1999
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BC 817W
BC 818W
V
(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
BC 817W
BC 818W
V
(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 25 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 25 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
50
A
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 100 mA, V
CE
= 1 V
h
FE
-grp. 16
h
FE
-grp. 25
h
FE
-grp. 40
h
FE
100
160
250
160
250
350
250
400
630
-
DC current gain 1)
I
C
= 300 mA, V
CE
= 1 V
h
FE
-grp. 16
h
FE
-grp. 25
h
FE
-grp. 40
h
FE
60
100
170
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
0.7
V
Base-emitter saturation voltage 1)
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
-
-
1.2
V
1) Pulse test: t
300
s, D = 2%
BC 817W, BC 818W
3
Oct-20-1999
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 50 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
170
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
6
-
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
60
-
BC 817W, BC 818W
4
Oct-20-1999
Permissible Pulse Load R
thJS
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Total power dissipation P
tot
= f (T
A
*;T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load
P
totmax
/ P
totDC
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector cutoff current
I
CBO
= f (T
A
)
V
CBO
= 25V
0
10
EHP00221
BC 817/818
A
T
150
0
5
10
CBO
nA
50
100
1
10
2
10
4
10
C
typ
max
10
3
BC 817W, BC 818W
5
Oct-20-1999
DC current gain
h
FE
= f (I
C
)
V
CE
= 1V
10
EHP00224
BC 817/818
-1
3
10
mA
0
10
3
10
5
5
10
0
10
1
10
1
C
FE
h
2
10
2
10
C
100
5
25 C
-50 C
Transition frequency
f
T
= f (I
C
)
V
CE
= 5V
10
EHP00218
BC 817/818
0
3
10
mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 10
0
10
EHP00215
CEsat
V
0.4
V
0.8
-1
10
0
10
1
3
10
5
5
C
mA
5
2
10
0.2
0.6
-50
25
150 C
C
C
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 10
0
10
EHP00222
BC 817/818
BEsat
V
2.0
V
4.0
-1
10
0
10
1
3
10
5
5
C
mA
5
2
10
1.0
3.0
C
-50
25 C
C
150
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