BCP51...BCP53
1
Nov-29-2001
PNP Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)
VPS05163
1
2
3
4
Type
Marking
Pin Configuration
Package
BCP51
BCP51-10
BCP51-16
BCP52
BCP52-10
BCP52-16
BCP53
BCP53-10
BCP53-16
BCP 51
BCP 51-10
BCP 51-16
BCP 52
BCP 52-10
BCP 52-16
BCP 53
BCP 53-10
BCP 53-16
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
BCP51...BCP53
2
Nov-29-2001
Maximum Ratings
Parameter
Symbol
BCP51
BCP52
BCP53
Unit
Collector-emitter voltage
V
CEO
45
60
80
V
Collector-emitter voltage R
BE
1k
V
CER
45
60
100
Collector-base voltage
V
CBO
45
60
100
Emitter-base voltage
V
EBO
5
5
5
A
DC collector current
1
I
C
Peak collector current
1.5
I
CM
Base current
I
B
mA
100
I
BM
Peak base current
200
W
Total power dissipation
, T
S
= 124 C
P
tot
1.5
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
17
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCP51...BCP53
3
Nov-29-2001
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BCP51
BCP52
BCP53
V
(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 A, I
E
= 0
BCP51
BCP52
BCP53
V
(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 30 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 30 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
20
A
DC current gain 1)
I
C
= 5 mA, V
CE
= 2 V
h
FE
25
-
-
-
DC current gain 1)
I
C
= 150 mA, V
CE
= 2 V
BCP51...53
hFE-grp.10
hFE-grp.16
h
FE
40
63
100
-
100
160
250
160
250
DC current gain 1)
I
C
= 500 mA, V
CE
= 2 V
h
FE
25
-
-
Collector-emitter saturation voltage1)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
0.5
V
Base-emitter voltage 1)
I
C
= 500 mA, V
CE
= 2 V
V
BE(ON)
-
-
1
AC Characteristics
Transition frequency
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
f
T
-
125
-
MHz
1) Pulse test: t
=
300
s, D = 2%
BCP51...BCP53
4
Nov-29-2001
Transition frequency f
T
= f (I
C
)
V
CE
= 10V
10
EHP00260
BCP 51...53
0
3
10
mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Total power dissipation P
tot
= f(T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
0.2
0.4
0.6
0.8
1
1.2
W
1.6
P
tot
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 30V
0
10
EHP00262
BCP 51...53
A
T
150
-1
4
10
CBO
nA
50
100
0
10
1
10
3
10
C
10
2
max
typ
DC current gain hFE = f (I
C
)
VCE = 2V
10
EHP00261
BCP 51...53
0
4
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
3
10
2
10
C
100
5
25 C
-50 C
BCP51...BCP53
5
Nov-29-2001
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 10
0
10
EHP00264
BCP 51...53
CEsat
V
0.4
V
0.8
0
10
1
10
2
4
10
5
5
C
mA
5
3
10
0.2
0.6
C
100
25 C
C
-50
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 10
0
10
EHP00263
BCP 51...53
BEsat
V
0
4
10
C
mA
0.2
1
10
2
10
3
10
0.4
0.6
0.8
1.2
V
C
100
25 C
-50C
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00265
BCP 51...53
-6
-5
10
0
10
s
0
10
2
10
5
5
10
-4
10
-3
10
-2
10
1
5
D =
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
tot max
tot
P
DC
P
p
t
t
p
=
D
T
t
p
T
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