BCP54M...BCP56M
1
Nov-29-2001
NPN Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51M...BCP53M(PNP)
VPW05980
1
2
3
5
4
Type
Marking
Pin Configuration
Package
BCP54M
BCP55M
BCP56M
BAs
BEs
BHs
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
4 n.c.
4 n.c.
4 n.c.
5 = C
5 = C
5 = C
SCT595
SCT595
SCT595
Maximum Ratings
Parameter
Symbol
BCP54M BCP55M BCP56M Unit
Collector-emitter voltage
V
CEO
45
60
80
V
Collector-base voltage
V
CBO
45
60
100
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
1
A
Peak collector current
I
CM
1.5
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
, T
S
77 C
P
tot
1.7
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
43
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCP54M...BCP56M
2
Nov-29-2001
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BCP54M
BCP55M
BCP56M
V
(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 A, I
E
= 0
BCP54M
BCP55M
BCP56M
V
(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 30 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 30 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
20
A
DC current gain 1)
I
C
= 5 mA, V
CE
= 2 V
h
FE
25
-
-
-
DC current gain 1)
I
C
= 150 mA, V
CE
= 2 V
h
FE
40
-
250
DC current gain 1)
I
C
= 500 mA, V
CE
= 2 V
h
FE
25
-
-
Collector-emitter saturation voltage1)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
0.5
V
Base-emitter voltage 1)
I
C
= 500 mA, V
CE
= 2 V
V
BE(ON)
-
-
1
AC Characteristics
MHz
Transition frequency
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
-
100
f
T
-
1) Pulse test: t
=
300
s, D = 2%
BCP54M...BCP56M
4
Nov-29-2001
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 30V
0
10
EHP00269
BCP 54...56
A
T
150
-1
4
10
CBO
nA
50
100
0
10
1
10
3
10
C
10
2
max
typ
Transition frequency f
T
= f (I
C
)
V
CE
= 10V
10
EHP00267
BCP 54...56
0
3
10
mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
5
5
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 10
0
10
EHP00270
BCP 54...56
BEsat
V
0
4
10
C
mA
0.2
1
10
2
10
3
10
0.4
0.6
0.8
1.2
V
C
100
25 C
-50 C
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 10
0
EHP00271
BCP 54...56
CEsat
V
0.4
V
0.8
10
0
10
1
3
10
C
mA
C
2
10
0.2
0.6
10
4
100
25 C
C
-50
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