BCP69
1
Nov-29-2001
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
VPS05163
1
2
3
4
Type
Marking
Pin Configuration
Package
BCP69
BCP69-10
BCP69-16
BCP69-25
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
20
V
Collector-emitter voltage
V
CES
25
V
Collector-base voltage
V
CBO
25
V
Emitter-base voltage
V
EBO
5
DC collector current
I
C
1
A
Peak collector current
I
CM
2
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
, T
S
= 124 C
P
tot
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
17
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCP69
2
Nov-29-2001
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 30 mA, I
B
= 0
V
(BR)CEO
20
-
-
V
Collector-emitter breakdown voltage
I
C
= 10 A, V
BE
= 0
V
(BR)CES
25
-
-
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
25
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 25 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 25 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
100
A
DC current gain 1)
I
C
= 5 mA, V
CE
= 10 V
h
FE
50
-
-
-
DC current gain 1)
I
C
= 500 mA, V
CE
= 1 V
BCP69
BCP69-10
BCP69-16
BCP69-25
h
FE
85
85
100
160
-
100
160
250
375
160
250
375
DC current gain 1)
I
C
= 1 A, V
CE
= 1 V
h
FE
60
-
-
Collector-emitter saturation voltage1)
I
C
= 1 A, I
B
= 100 mA
V
CEsat
-
-
0.5
V
Base-emitter voltage 1)
I
C
= 5 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 1 V
V
BE(ON)
-
-
0.6
-
-
1
AC Characteristics
-
Transition frequency
I
C
= 100 mA, V
CE
= 5 V, f = 100 MHz
-
100
f
T
MHz
1) Pulse test: t
=
300
s, D = 2%