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Электронный компонент: BCP69-25E6327

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BCP69
1
Nov-29-2001
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
VPS05163
1
2
3
4
Type
Marking
Pin Configuration
Package
BCP69
BCP69-10
BCP69-16
BCP69-25
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
20
V
Collector-emitter voltage
V
CES
25
V
Collector-base voltage
V
CBO
25
V
Emitter-base voltage
V
EBO
5
DC collector current
I
C
1
A
Peak collector current
I
CM
2
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
, T
S
= 124 C
P
tot
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
17
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCP69
2
Nov-29-2001
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 30 mA, I
B
= 0
V
(BR)CEO
20
-
-
V
Collector-emitter breakdown voltage
I
C
= 10 A, V
BE
= 0
V
(BR)CES
25
-
-
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
25
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 25 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 25 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
100
A
DC current gain 1)
I
C
= 5 mA, V
CE
= 10 V
h
FE
50
-
-
-
DC current gain 1)
I
C
= 500 mA, V
CE
= 1 V

BCP69
BCP69-10
BCP69-16
BCP69-25
h
FE
85
85
100
160
-
100
160
250
375
160
250
375
DC current gain 1)
I
C
= 1 A, V
CE
= 1 V
h
FE
60
-
-
Collector-emitter saturation voltage1)
I
C
= 1 A, I
B
= 100 mA
V
CEsat
-
-
0.5
V
Base-emitter voltage 1)
I
C
= 5 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 1 V
V
BE(ON)
-
-
0.6
-
-
1
AC Characteristics
-
Transition frequency
I
C
= 100 mA, V
CE
= 5 V, f = 100 MHz
-
100
f
T
MHz
1) Pulse test: t
=
300
s, D = 2%
BCP69
3
Nov-29-2001
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
EHP00283
BCP 69
0
3
10
mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Total power dissipation P
tot
= f(T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
0.2
0.4
0.6
0.8
1
1.2
W
1.6
P
tot
DC current gain h
FE
= f (I
C
)
V
CE
= 1V
10
EHP00285
BCP 69
0
4
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
2
10
C
5
100
25 C
C
-50
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 25V
0
10
EHP00284
BCP 69
A
T
150
0
5
10
CBO
nA
50
100
1
10
2
10
4
10
C
typ
max
10
3
BCP69
4
Nov-29-2001
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 10
0
10
EHP00287
BCP 69
BEsat
V
0
4
10
C
mA
0.2
1
10
2
10
3
10
0.4
0.6
0.8
1.2
V
C
100
25 C
-50 C
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 10
0
10
EHP00286
BCP 69
CEsat
V
0.4
V
0.8
0
10
1
10
2
4
10
5
5
C
mA
5
3
10
0.2
0.6
C
100
25 C
-50 C
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00288
BCP 69
-6
-5
10
1
10
s
-1
10
2
10
3
10
5
5
10
-4
10
-3
10
-2
10
1
0.0
0.2
0.1
0.05
0.02
0.01
0.005
=
D
0.5
tot max
tot
P
DC
P
p
t
t
p
=
D
T
t
p
T