BCR 116
Oct-19-1999
1
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=4.7k
, R
2
=47k
)
1
2
3
VPS05161
EHA07184
3
2
1
C
E
B
R
1
R
2
Type
Marking
Pin Configuration
Package
BCR 116
WGs
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
V
50
50
V
CBO
Collector-base voltage
Emitter-base voltage
5
V
EBO
Input on Voltage
V
i(on)
15
100
mA
I
C
DC collector current
Total power dissipation
, T
S
= 102 C
P
tot
mW
200
Junction temperature
T
j
150
C
-65 ... 150
Storage temperature
T
stg
Thermal Resistance
Junction ambient
1)
350
K/W
R
thJA
Junction - soldering point
R
thJS
240
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2Cu
BCR 116
Oct-19-1999
2
Electrical Characteristics at T
A
=25C, unless otherwise specified
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC Characteristics
-
V
50
-
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 100 A, I
B
= 0
50
-
V
(BR)CBO
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
-
-
Collector cutoff current
V
CB
= 40 V, I
E
= 0
I
CBO
-
100
nA
-
-
A
Emitter cutoff current
V
EB
= 5 V, I
C
= 0
I
EBO
155
70
-
-
-
DC current gain 1)
I
C
= 5 mA, V
CE
= 5 V
h
FE
-
V
CEsat
-
0.3
V
Collector-emitter saturation voltage1)
I
C
= 10 mA, I
B
= 0.5 mA
0.4
Input off voltage
I
C
= 100 A, V
CE
= 5 V
V
i(off)
-
0.8
V
0.5
-
Input on Voltage
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
1.4
3.2
4.7
k
Input resistor
R
1
6.2
0.09
R
1
/R
2
0.1
0.11
Resistor ratio
-
AC Characteristics
f
T
-
-
MHz
160
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
C
cb
-
3
pF
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
-
1) Pulse test: t < 300
s; D < 2%
BCR 116
Oct-19-1999
3
DC Current Gain h
FE
= f (I
C
)
V
CE
= 5V (common emitter configuration)
10
-1
10
0
10
1
10
2
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
V
CEsat
= f (I
C
), h
FE
= 20
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage V
i(on)
= f (I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
10
2
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage V
i(off)
= f (I
C
)
V
CE
= 5V (common emitter configuration)
0.0
0.2
0.4
0.6
V
1.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
BCR 116
Oct-19-1999
4
Total power dissipation P
tot
= f (T
A
*;T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
Kein
T
S
T
A
Permissible Pulse Load
P
totmax
/ P
totDC
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load R
thJS
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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