BCW65, BCW66
1
Jul-10-2001
NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
EAs
EBs
ECs
EFs
EGs
EHs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
BCW65
BCW66
Unit
Collector-emitter voltage
V
CEO
32
45
V
Collector-base voltage
V
CBO
60
75
Emitter-base voltage
V
EBO
5
5
DC collector current
I
C
800
mA
Peak collector current
I
CM
1
A
Base current
mA
100
I
B
Peak base current
I
BM
200
Total power dissipation
, T
S
= 79 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
215
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCW65, BCW66
2
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BCW65
BCW66
V
(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
BCW65
BCW66
V
(BR)CBO
60
75
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 32 V, I
E
= 0
V
CB
= 45 V, I
E
= 0
BCW65
BCW66
I
CBO
-
-
-
-
20
20
nA
Collector cutoff current
V
CB
= 32 V, I
E
= 0 , T
A
= 150 C
V
CB
= 45 V, I
E
= 0 , T
A
= 150 C
BCW65
BCW66
I
CBO
-
-
-
-
20
20
A
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
20
nA
DC current gain 1)
I
C
= 100 A, V
CE
= 10 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
35
50
80
-
-
-
-
-
-
-
DC current gain 1)
I
C
= 10 mA, V
CE
= 1 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
75
110
180
-
-
-
-
-
-
DC current gain 1)
I
C
= 100 mA, V
CE
= 1 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
100
160
250
160
250
350
250
400
630
1) Pulse test: t
300
s, D = 2%
BCW65, BCW66
3
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
DC current gain 1)
I
C
= 500 mA, V
CE
= 2 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
-
-
-
35
60
100
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
-
-
0.3
0.7
V
Base-emitter saturation voltage 1)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
-
-
-
-
1.25
2
AC Characteristics
Transition frequency
I
C
= 50 mA, V
CE
= 5 V, f = 20 MHz
f
T
-
170
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
6
-
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
60
-