BCX42, BSS63
1
Jul-10-2001
PNP Silicon AF an Swiching Transistors
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX41, BSS64 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BCX42
BSS63
DKs
BMs
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
BSS63
BCX42
Unit
Collector-emitter voltage
V
CEO
100
125
V
Collector-base voltage
V
CBO
110
125
Emitter-base voltage
V
EBO
5
5
DC collector current
I
C
800
mA
A
Peak collector current
1
I
CM
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
, T
S
= 79 C
mW
330
P
tot
T
j
C
Junction temperature
150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
215
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCX42, BSS63
2
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BSS63
BCX42
V
(BR)CEO
100
125
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 A, I
B
= 0
BSS63
BCX42
V
(BR)CBO
110
125
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 80 V, I
E
= 0
V
CB
= 100 V, I
E
= 0
BSS63
BCX42
I
CBO
-
-
-
-
100
100
nA
Collector cutoff current
V
CB
= 80 V, I
E
= 0 , T
A
= 150 C
V
CB
= 100 V, I
E
= 0 , T
A
= 150 C
BSS63
BCX42
I
CBO
-
-
-
-
20
20
A
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
100
nA
Collector cutoff current
V
CE
= 100 V, T
A
= 85 C
V
CE
= 100 V, T
A
= 125 C
BCX42
BCX42
I
CEO
-
-
-
-
10
75
A
DC current gain 1)
I
C
= 100 A, V
CE
= 1 V
I
C
= 10 mA, V
CE
= 5 V
I
C
= 20 mA, V
CE
= 5 V
I
C
= 100 mA, V
CE
= 1 V
I
C
= 200 mA, V
CE
= 1 V
BCX42
BSS63
BSS63
BCX42
BCX42
h
FE
25
30
30
63
40
-
-
-
-
-
-
-
-
-
-
-
1) Pulse test: t
300
s, D = 2%
BCX42, BSS63
3
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter saturation voltage1)
I
C
= 300 mA, I
B
= 30 mA
I
C
= 25 mA, I
B
= 2.5 mA
I
C
= 75 mA, I
B
= 7.5 mA
BCX42
BSS63
BSS63
V
CEsat
-
-
-
-
-
-
0.9
0.25
0.9
V
Base-emitter saturation voltage 1)
I
C
= 300 mA, I
B
= 30 mA
BCX42
V
BEsat
-
-
1.4
AC Characteristics
MHz
-
-
150
f
T
Transition frequency
I
C
= 20 mA, V
CE
= 5 V, f = 20 MHz
pF
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
-
12
C
cb
-
BCX42, BSS63
4
Jul-10-2001
Collector current
I
C
= f (V
BE
)
V
CE
= 1V
10
0
1
3
BCX 42/BSS 63
EHP00429
V
BE
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
25
150
-50
2
T
A
=
C
C
C
C
Total power dissipation
P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00430
BCX 42/BSS 63
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency
f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
BCX 42/BSS 63
EHP00431
f
mA
MHz
0
1
2
3
5
T
3
10
10
2
1
10
5
5
5
C
BCX42, BSS63
5
Jul-10-2001
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 10
0
400
800
BCX 42/BSS 63
EHP00433
V
CE sat
mV
mA
10
3
0
10
10
10
1
10
10
2
10
5
5
5
10
200
600
150
25
-50
-1
C
C
C
C
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 10
10
0
1
3
BCX 42/BSS 63
EHP00432
V
BE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
25
150
-50
2
C
C
C
C
Collector cutoff current
I
CBO
= f (T
A
)
V
CB
= 100V
10
0
50
100
150
BCX 42/BSS 63
EHP00434
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
DC current gain
h
FE
= f (I
C
)
V
CE
= 1V
10
10
10
10
BCX 42/BSS 63
EHP00435
h
mA
-1
0
2
3
FE
3
10
10
2
1
10
5
5
1
10
150
25
-50
5
5
5
C
C
C
C
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