BF543
Jun-28-2001
1
Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz
preferably in FM applications
I
DSS
= 4mA, g
fs
= 12mS
1
2
3
VPS05161
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BF543
LDs
1 = G
2 = D
3 = S
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
V
DS
20
V
Drain current
I
D
30
mA
Gate-source peak current
I
GSM
10
Total power dissipation
, T
S
76 C
P
tot
200
mW
Storage temperature
T
stg
-55 ... 150
C
Ambient temperature range
T
A
-55 ... 150
Channel temperature
T
ch
150
Thermal Resistance
Channel - soldering point
1)
R
thchs
370
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BF543
Jun-28-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Drain-source breakdown voltage
I
D
= 10 A,
-
V
GS
= 4 V
V
(BR)DS
20
-
-
V
Gate-source breakdown voltage
I
GS
= 10 mA, V
DS
= 0
V
(BR)GSS
7
-
12
Gate-source leakage current
V
GS
= 6 V, V
DS
= 0
I
GSS
-
-
50
nA
Drain current
V
DS
= 10 V, V
GS
= 0
I
DSS
2
4
6
mA
Gate-source pinch-off voltage
V
DS
= 10 V, I
D
= 20 A
- V
GS (p)
-
0.7
1.5
V
AC characteristics
Forward tranconductance
V
DS
= 10 V, I
D
= 4 mA
g
fs
9.5
12
-
mS
Gate input capacitance
V
DS
= 10 V, I
D
= 4 mA, f = 1 MHz
C
gss
-
2.7
-
pF
Reverse tranfer capacitance
V
DS
= 10 V, I
D
= 4 mA, f = 1 MHz
C
dg
-
18
-
fF
Output capacitance
V
DS
= 10 V, I
D
= 4 mA, f = 1 MHz
C
dss
-
0.9
-
pF
Power gain (test circuit)
G
G
= 2mS, G
L
= 0,5 mS
V
DS
= 10 V, I
D
= 4 mA, f = 200 MHz
G
p
-
22
-
dB
Noise figure (test circuit)
G
G
= 2mS, G
L
= 0,5 mS
V
DS
= 10 V, I
D
= 4 mA, f = 200 MHz
F
-
1
-
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