BFN16, BFN18
Nov-30-2001
1
NPN Silicon High-Voltage Transistors
Suitable for video output stages in TV sets and
switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN17, BFN19 (PNP)
2
1
3
VPS05162
2
Type
Marking
Pin Configuration
Package
BFN16
BFN18
DD
DE
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
SOT89
SOT89
Maximum Ratings
Parameter
Symbol
BFN16
BFN18
Unit
Collector-emitter voltage
V
CEO
250
300
V
Collector-base voltage
V
CBO
250
300
Emitter-base voltage
V
EBO
5
5
DC collector current
I
C
200
mA
I
CM
500
Peak collector current
100
I
B
Base current
Peak base current
200
I
BM
P
tot
1
Total power dissipation
, T
S
= 130 C
W
C
Junction temperature
T
j
150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
20
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFN16, BFN18
Nov-30-2001
2
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
BFN16
BFN18
V
(BR)CEO
250
300
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 A, I
E
= 0
BFN16
BFN18
V
(BR)CBO
250
300
-
-
-
-
Emitter-base breakdown voltage
I
E
= 100 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 200 V, I
E
= 0
V
CB
= 250 V, I
E
= 0
BFN16
BFN18
I
CBO
-
-
-
-
100
100
nA
Collector cutoff current
V
CB
= 200 V, I
E
= 0 , T
A
= 150 C
V
CB
= 250 V, I
E
= 0 , T
A
= 150 C
BFN16
BFN18
I
CBO
-
-
-
-
20
20
A
Emitter cutoff current
V
EB
= 3 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
BFN16
BFN18
h
FE
25
40
40
30
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA, I
B
= 2 mA
BFN16
BFN18
V
CEsat
-
-
-
-
0.4
0.5
V
Base-emitter saturation voltage 1)
I
C
= 20 mA, I
B
= 2 mA
V
BEsat
-
-
0.9
1) Pulse test: t < 300
s; D < 2%
BFN16, BFN18
Nov-30-2001
3
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 20 mA, V
CE
= 10 V, f = 20 MHz
f
T
-
70
-
MHz
Collector-base capacitance
V
CB
= 30 V, f = 1 MHz
C
cb
-
2.5
-
pF
BFN16, BFN18
Nov-30-2001
4
Operating range I
C
= f (V
CEO
)
T
A
= 25C, D = 0
EHP00580
BFN 16/18
10
10
V
CEO
10
mA
C
10
3
1
10
-1
5
10
10
10
0
5
V
5
10
2
0
1
2
3
5
5
5
10
100
1
100
DC
ms
ms
s
s
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
0.2
0.4
0.6
0.8
W
1.2
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00581
BFN 16/18
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Collector current I
C
= f (V
BE
)
V
CE
= 10V
EHP00582
BFN 16/18
10
0
V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5
1.0
10
0
5
V
5
10
2
BFN16, BFN18
Nov-30-2001
5
Transition frequency f
T
= f (I
C
)
V
CE
= 10V
EHP00583
BFN 16/18
10
10
10
mA
f
C
10
MHz
10
T
5
5
5
0
1
2
3
10
3
2
10
1
5
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 200V
EHP00584
BFN 16/18
10
0
C
A
150
nA
CBO
10
4
1
10
-1
5
50
100
5
10
2
10
0
5
T
max
typ
5
10
3
DC current gain h
FE
= f (I
C
)
V
CE
= 10V
EHP00585
BFN 16/18
10
10
mA
h
C
10
5
FE
10
3
1
10
0
5
10
10
10
-1
0
1
2
3
5
10
2
5
5
5
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