BFP 180
Oct-12-1999
1
NPN Silicon RF Transistor
For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2 mA to 2.5 mA
f
T
= 7 GHz
F = 2.1 dB at 900 MHz
VPS05178
2
1
3
4
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP 180
RDs
1 = C
2 = E
3 = B
4 = E
SOT-143
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
8
V
Collector-emitter voltage
V
CES
10
Collector-base voltage
V
CBO
10
Emitter-base voltage
V
EBO
2
Collector current
I
C
4
mA
Base current
I
B
0.5
Total power dissipation
, T
S
124C
1)
P
tot
30
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
R
thJS
875
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
BFP 180
Oct-12-1999
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Values
Unit
Symbol
min.
max.
typ.
DC characteristics
V
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
8
-
-
A
Collector-emitter cutoff current
V
CE
= 10 V, V
BE
= 0
-
100
-
I
CES
Collector-base cutoff current
V
CB
= 8 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V, I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 1 mA, V
CE
= 5 V
h
FE
30
100
200
-
BFP 180
Oct-12-1999
3
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
max.
min.
typ.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 3 mA, V
CE
= 5 V, f = 500 MHz
f
T
5
7
GHz
-
C
cb
pF
-
Collector-base capacitance
V
CB
= 5 V, f = 1 MHz
0.19
0.35
Collector-emitter capacitance
V
CE
= 5 V, f = 1 MHz
0.27
-
-
C
ce
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
0.13
-
C
eb
-
2.1
2.25
F
-
-
Noise figure
I
C
= 1 mA, V
CE
= 5 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
dB
-
-
-
-
G
ms
Power gain, maximum stable
F)
I
C
= 1 mA, V
CE
= 5 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
15
12
-
-
8.5
7
-
-
|S
21e
|
2
Transducer gain
I
C
= 1 mA, V
CE
= 5 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
-
-
1
G
ms
= |S
21
/ S
12
|
BFP 180
Oct-12-1999
4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BF =
94.687
-
IKF =
0.025252
A
BR =
-
20.325
IKR =
0.012138
A
RB =
1.4255
RE =
3.7045
VJE =
1.1812
V
XTF =
0.3062
-
PTF =
0
deg
MJC =
0.30423
-
CJS =
0
fF
XTB =
0
-
FC =
0.87906
-
IS =
0.18519
fA
VAF =
26.867
V
NE =
1.9818
-
VAR =
V
3.2134
NC =
1.6195
-
RBM =
60
CJE =
3.2473
fF
TF =
ps
14.866
ITF =
1.0202
mA
VJC =
1.1812
V
TR =
ns
2.2648
MJS =
0
-
XTI =
3
-
NF =
1.0236
-
ISE =
130.93
fA
NR =
0.93013
-
ISC =
6.1852
fA
IRB =
0.01
mA
RC =
0.56
MJE =
0.41827
-
VTF =
0.22023
V
CJC =
183.69
fF
XCJC =
0.08334
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut fr Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
Package Equivalent Circuit:
L
BI
=
0.89
nH
L
BO
=
0.73
nH
L
EI
=
0.4
nH
L
EO
=
0.15
nH
L
CI
=
0
nH
L
CO
=
0.42
nH
C
BE
=
189
fF
C
CB
=
15
fF
C
CE
=
187
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
BFP 180
Oct-12-1999
5
Total power dissipation P
tot
= f (T
A
*, T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
5
10
15
20
25
30
mW
40
P
tot
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
5
10
15
20
25
30
mW
40
P
tot
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
5
10
15
20
25
30
mW
40
P
tot
Permissible Pulse Load R
thJS
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
K/W
P
tot
m
ax
/ P
totDC
D = 0
0.005
0.001
0.02
0.05
0.1
0.2
0.5
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