BFP690
Oct-30-2002
1
NPN Silicon Germanium RF Transistor
Preliminary data
For medium power amplifiers
Maxim. available Gain G
ma
= 17 dB at 1.8 GHz
Gold metallization for high reliability
70 GHz f
T
- Silicon Germanium technology
VPW05980
1
2
3
5
4
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP690
R9s
1=B
2=E
3=C
4=C
5=E
-
SCT595
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
4
V
Collector-emitter voltage
V
CES
13
Collector-base voltage
V
CBO
13
Emitter-base voltage
V
EBO
1.2
Collector current
I
C
350
mA
Base current
I
B
20
Total power dissipation
1)
T
S
80C
P
tot
1000
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
2)
R
thJS
60
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFP690
Oct-30-2002
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0 A
V
(BR)CEO
4
4.5
-
V
Collector-base cutoff current
V
CB
= 5 V, I
E
= 0 A
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 0.5 V, I
C
= 0 A
I
EBO
-
-
10
A
DC current gain
I
C
= 200 mA, V
CE
= 3 V
h
FE
100
180
250
-
BFP690
Oct-30-2002
3
Electrical Characteristics
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 200 mA, V
CE
= 3 V, f = 0.5 GHz
f
T
-
37
-
GHz
Collector-base capacitance
V
CB
= 3 V, f = 1 MHz
C
cb
-
0.6
-
pF
Collector emitter capacitance
V
CE
= 3 V, f = 1 MHz
C
ce
-
1.25
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
3
-
Noise figure
I
C
= 35 mA, V
CE
= 3 V, f = 1.8 GHz, Z
S
= Z
Sopt
I
C
= 35 mA, V
CE
= 3 V, f = 3 GHz, Z
S
= Z
Sopt
F
-
-
1
1.2
-
-
dB
Power gain, maximum available
1)
I
C
= 200 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 1.8 GHz
I
C
= 200 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 3 GHz
G
ma
-
-
17.5
13
-
-
Transducer gain
I
C
= 200 mA, V
CE
= 3 V, Z
S
= Z
L
= 50
,
f
= 1.8 GHz
I
C
= 200 mA, V
CE
= 3 V, Z
S
= Z
L
= 50
,
f
= 3 GHz
|S
21e
|
2
-
-
11
6.5
-
-
dB
Third order intercept point at output
2)
V
CE
= 3 V, I
C
= 200 mA, f = 1.8 GHz,
Z
S
= Z
L
= 50
IP
3
-
29
-
dBm
1dB Compression point at output
I
C
= 200 mA, V
CE
= 3 V, Z
S
= Z
L
= 50
,
f
= 1.8 GHz
P
-1dB
-
19.5
-
1G
ma
= |
S
21
/
S
12
| (k-(k-1)
1/2
)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz
BFP690
Oct-30-2002
4
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
1.41
fA
VAF =
1000
-
NE =
2
VAR =
2
V
NC =
1.8
-
RBM =
0.3836
CJE =
1.592
fF
TF =
1.9
ps
ITF =
2.9
A
VJC =
0.6
V
TR =
0.2
ns
MJS =
0.27
-
XTI =
3
-
AF =
2
-
TITF1
-0.0065
-
BF =
450
-
IKF =
0.9
A
BR =
40
-
IKR =
45
mA
RB =
0.4442
RE =
0.14
-
VJE =
0.8
V
XTF =
5
-
PTF =
0
deg
MJC =
0.5
-
CJS =
688.1
fF
NK =
-1.42
-
FC =
0.8
KF =
1.046E-11
TITF2
1.0E-5
NF =
1.025
-
ISE =
145
fA
NR =
1
-
ISC =
1.2
pA
IRB =
10.61
mA
RC =
0.4312
MJE =
0.3
-
VTF =
0.6
V
CJC =
477.5
fF
XCJC =
1
-
VJS =
0.6
V
EG =
1.078
eV
TNOM
298
K
All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by:
Institut fr Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
B
C
E
C C E O
C B E C
C B C C
S
C
B
E
B F P 6 9 0 _ C h i p
L B C
L C C
L E C
R C B S
R C C S
R C E S
L B B
L C B
L E B
I t f = 2 9 0 0 * ( 1 - 6 . 5 e - 3 * ( T - 2 5 ) + 1 . 0 e - 5 * ( T - 2 5 ) ^ 2 )
T = 2 5 C
LBC =
15
pH
LCC =
4
pH
LEC =
4
pH
LBB =
900
pH
LCB =
700
pH
LEB =
130
pH
CBEC = 864.4
fF
CBCC = 399.9
fF
CES =
450
fF
CBS =
535
fF
CCS =
135
fF
CCEO = 130
fF
RBS =
190
RCS =
340
RES =
340
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
BFP690
Oct-30-2002
5
Total power dissipation
P
tot
=
(T
S
)
0
15
30
45
60
75
90 105 120 C
150
T
S
0
100
200
300
400
500
600
700
800
900
mW
1100
P
tot
Permissible Pulse Load
R
thJS
=
(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
C
t
p
0
10
1
10
2
10
K/W
R
thJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
P
totmax
/P
totDC
=
(t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance
C
cb
=
(V
CB
)
f
= 1MHz
0
2
4
6
8
10
V
13
V
CB
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
pF
2
C
CB
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