BFQ19S
Jun-22-2001
1
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
2
1
3
VPS05162
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFQ19S
FG
1 = B
2 = C
3 = E
SOT89
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
3
Collector current
I
C
75
mA
Base current
I
B
10
Total power dissipation
T
S
85 C
1)
P
tot
1
W
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
65
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFQ19S
Jun-22-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
min.
typ.
DC characteristics
V
-
-
15
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
A
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
-
I
CES
100
-
nA
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
-
I
CBO
-
100
A
Emitter-base cutoff current
V
EB
= 2 V, I
C
= 0
I
EBO
10
-
-
-
DC current gain
I
C
= 70 mA, V
CE
= 8 V
h
FE
40
100
220
BFQ19S
Jun-22-2001
3
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 70 mA, V
CE
= 8 V, f = 500 MHz
f
T
4
5.5
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
1
1.5
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.4
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
4.4
-
Noise figure
I
C
= 20 mA, V
CE
= 8 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
2.5
4
-
-
dB
Power gain, maximum available
1)
I
C
= 70 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
-
11.5
7
-
-
Transducer gain
I
C
= 30 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
9.5
4
-
-
Third order intercept point
I
C
= 70 mA, V
CE
= 8 V, Z
S
=Z
Sopt
, Z
L
=Z
Lopt
,
f
= 1.8 GHz
IP
3
-
35
-
dBm
1
G
ma
= |S
21
/ S
12
| (k-(k
2
-1)
1/2
)
BFQ19S
Jun-22-2001
4
Total power dissipation P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
100
200
300
400
500
600
700
800
900
1000
mW
1200
P
tot
Permissible Pulse Load R
thJS
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
P
tot
m
ax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
PDF 
ZIP