May-14-2003
1
BFR460L3
2
3
1
NPN Silicon RF Transistor
Preliminary data
For low voltage / low current applications
Ideal for VCO modules and low noise amplifiers
Low noise figure: 1.1 dB at 1.8 GHz
World's smallest SMD leadless package
Excellent ESD performance (>1500V HBM)
High f
T
of 22 GHz
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR460L3
AB
1 = B
2 = E
3 = C
TSLP-3-1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
4.5
V
Collector-emitter voltage
V
CES
15
Collector-base voltage
V
CBO
15
Emitter-base voltage
V
EBO
1.5
Collector current
I
C
50
mA
Base current
I
B
5
Total power dissipation
1)2)
T
S
108C
P
tot
200
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
3)
R
thJS
210
K/W
1P
tot
due to Maximum Ratings
2TS is measured on the collector lead at the soldering point to the pcb
3For calculation of R
thJA
please refer to Application Note Thermal Resistance
May-14-2003
2
BFR460L3
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
4.5
5
-
V
Collector-base cutoff current
V
CB
= 5 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 0,5 V, I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 20 mA, V
CE
= 3 V
h
FE
50
130
200
-
May-14-2003
3
BFR460L3
Electrical Characteristics
at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 30 mA, V
CE
= 3 V, f = 1 GHz
f
T
16
22
-
GHz
Collector-base capacitance
V
CB
= 3 V, f = 1 MHz, emitter grounded
C
cb
-
0.3
0.45
pF
Collector emitter capacitance
V
CE
= 3 V, f = 1 MHz, base grounded
C
ce
-
0.14
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz, collector grounded
C
eb
-
0.55
-
Noise figure
I
C
= 5 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
f
= 1.8 GHz
I
C
= 5 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
f
= 3 GHz
F
-
-
1.1
1.35
-
-
dB
Power gain, maximum stable
1)
I
C
= 20 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 1.8 GHz
G
ms
-
16.0
-
dB
Power gain, maximum available
1)
I
C
= 20 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 3 GHz
G
ma
-
11
-
dB
Transducer gain
I
C
= 20 mA, V
CE
= 3 V, Z
S
= Z
L
= 50
,
f
= 1,8 GHz
I
C
= 20 mA, V
CE
= 3 V, Z
S
= Z
L
= 50
,
f
= 3 GHz
|S
21e
|
2
-
-
14
10
-
-
dB
Third order intercept point at output
2)
V
CE
= 3 V, I
C
= 20 mA, f = 1.8 GHz
IP
3
-
27
-
dBm
1dB Compression point at output
I
C
= 20 mA, V
CE
= 3 V, f = 1.8 GHz
P
-1dB
-
11.5
-
1G
ma
= |
S
21
/
S
12
| (k-(k-1)
1/2
),
G
ms
=
S
21
/
S
12
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz
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