BFS482
1
Jun-27-2001
NPN Silicon RF Transistor
For low-noise. high-gain broadband amplifiers
at collector currents from 0.2 mA to 20 mA
f
T
= 8 GHz
F = 1.2 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
VPS05604
6
3
1
5
4
2
EHA07196
6
5
4
3
2
1
C1
E2
B2
C2
E1
B1
TR1
TR2
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFS482
RGs
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
35
mA
Base current
I
B
4
Total power dissipation
T
S
81 C
1)
P
tot
250
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
275
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFS482
2
Jun-27-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V, I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 10 mA, V
CE
= 8 V
h
FE
50
100
200
-
BFS482
3
Jun-27-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 15 mA, V
CE
= 8 V, f = 500 MHz
f
T
6
8
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.3
0.45
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.12
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
0.65
-
Noise figure
I
C
= 3 mA, V
CE
= 8 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1.2
1.9
-
-
dB
Power gain, maximum stable
1)
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
G
ms
-
19.5
-
Power gain, maximum available
2)
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 1.8 GHz
G
ma
-
13
-
Transducer gain
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
15.5
10
-
-
1
G
ms
= |S
21
/ S
12
|
2
G
ma
= |S
21
/ S
12
| (k-(k
2
-1)
1/2
)
BFS482
4
Jun-27-2001
Total power dissipation P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load R
thJS
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFS482
5
Jun-27-2001
Collector-base capacitance C
cb
= f (V
CB
)
f = 1MHz
0
4
8
12
16
V
24
V
CB
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
pF
0.50
C
cb
Transition frequency f
T
= f (I
C
)
V
CE
= Parameter
0
5
10
15
20
25
30
35 mA
45
I
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
GHz
8.0
f
T
8V
5V
3V
2V
1V
0.7V
Power Gain G
ma
, G
ms
= f(I
C
)
f = 0.9GHz
V
CE
= Parameter
0
5
10
15
20
25
30
35 mA
45
I
C
6
8
10
12
14
16
18
dB
22
G
10V
5V
3V
2V
1V
0.7V
Power Gain G
ma
, G
ms
= f(I
C
)
f = 1.8GHz
V
CE
= Parameter
0
5
10
15
20
25
30
35 mA
45
I
C
0
2
4
6
8
10
dB
14
G
8V
5V
3V
2V
1V
0.7V
BFS482
6
Jun-27-2001
Intermodulation Intercept Point IP
3
=f(I
C
)
(3rd order, Output,
Z
S
=Z
L
=50
)
V
CE
= Parameter, f = 900MHz
0
4
8
12
16
20
mA
28
I
C
6
8
10
12
14
16
18
20
22
24
dBm
28
IP
3
8V
5V
3V
2V
1V
Power Gain G
ma
, G
ms
= f(V
CE
):_____
|S
21
|
2
= f(V
CE
):---------
f = Parameter
0
1
2
3
4
5
6
7
8
V
10
V
CE
6
8
10
12
14
16
18
dB
22
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
I
C
=10mA
Power Gain |S
21
|
2
= f(f)
V
CE
=
Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
0
2
4
6
8
10
12
14
16
18
20
22
24
dB
28
S
21
8V
1V
0.7V
I
C
=10mA
Power Gain G
ma
, G
ms
= f(f)
V
CE
= Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
0
4
8
12
16
20
24
dB
32
G
8V
1V
0.7V
I
C
=10mA
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