SIGC156T120R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
This chip is used for:
power module
BSM100GD120DN2
FEATURES:
1200V NPT technology 200m chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
integrated gate resistor
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm
2
sawn on foil
Q67041-
A4661-A003
MECHANICAL PARAMETER:
Raster size
12.59 X 12.59
Emitter pad size
8 x ( 3.98 x 2.38 )
Gate pad size
1.46 x 0.8
Area total / active
158.5 / 132.6
mm
2
Thickness
200
m
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
82 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500m
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23C
SIGC156T120R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25
C
V
CE
1200
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
c p u l s
300
A
Gate emitter voltage
V
GE
20
V
Operating junction and storage temperature
T
j
, T
s t g
-55 ... +150
C
1 )
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25
C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V , I
C
=5mA
1200
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=100A
2.0
2.5
3.0
Gate-emitter threshold voltage
V
GE(th)
I
C
=4mA , V
GE
=V
CE
4.5
5.5
6.5
V
Zero gate voltage collector current
I
CES
V
CE
=1200V , V
GE
=0V
600
A
Gate-emitter leakage current
I
GES
V
CE
=0V , V
GE
=20V
600
nA
Integrated gate resistor
R
Gint
5
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Input capacitance
C
i s s
-
6.5
-
Output capacitance
C
o s s
-
1
-
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
GE
= 0 V ,
f=1MHz
-
0.5
-
nF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Value
Parameter
Symbol
Conditions
1)
min.
typ.
max.
Unit
Turn-on delay time
t
d(on)
-
160
320
Rise time
t
r
-
80
160
Turn-off delay time
t
d ( o f f )
-
400
520
Fall time
t
f
T
j
= 1 2 5
C
V
C C
=600V,
I
C
=100A,
V
GE
=+15/ - 15V,
R
G
= 6 . 8
-
70
100
ns
1)
values also influenced by parasitic L- and C- in measurement and package.
SIGC156T120R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
CHIP DRAWING:
SIGC156T120R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BSM100GD120DN2
ECONOPACK3
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2002
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