BSO072N03S
Opti
MOS
2 Power-Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC
N-channel
Logic level
Excellent gate charge x R
DS(on)
product (FOM)
Very low on-resistance R
DS(on)
Avalanche rated
dv /dt rated
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
10 secs
steady state
Continuous drain current
I
D
T
A
=25 C
2)
15
12
A
T
A
=70 C
2)
12
9.6
Pulsed drain current
I
D,pulse
T
A
=25 C
3)
Avalanche energy, single pulse
E
AS
I
D
=15 A, R
GS
=25
mJ
Reverse diode dv /dt
dv /dt
I
D
=15 A, V
DS
=20 V,
di /dt =200 A/s,
T
j,max
=150 C
kV/s
Gate source voltage
V
GS
V
Power dissipation
P
tot
T
A
=25 C
2)
2.5
1.56
W
Operating and storage temperature
T
j
, T
stg
C
IEC climatic category; DIN IEC 68-1
Qualified according to JEDEC
1
for target applications
Value
55/150/56
-55 ... 150
20
6
145
60
V
DS
30
V
R
DS(on),max
6.8
m
I
D
15
A
Product Summary
Type
Package
Ordering Code
Marking
BSO072N03S
P-DSO-8
Q67042-S4208
72N3S
P-DSO-8
Rev. 1.11
page 1
2004-02-09
BSO072N03S
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - soldering point
R
thJS
-
-
35
K/W
Thermal resistance,
junction - ambient
R
thJA
minimal footprint,
t
p
10 s
-
-
110
minimal footprint,
steady state
-
-
150
6 cm
2
cooling area
2)
,
t
p
10 s
-
-
50
6 cm
2
cooling area
2)
,
steady state
-
-
80
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
30
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=45 A
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 C
-
0.1
1
A
V
DS
=30 V, V
GS
=0 V,
T
j
=125 C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=13 A
-
7.4
9.3
m
V
GS
=10 V, I
D
=15 A
-
5.7
6.8
Gate resistance
R
G
-
1
-
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=15 A
24
47
-
S
3)
See figure 3
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
Values
1)
J-STD20 and JESD22
Rev. 1.11
page 2
2004-02-09
BSO072N03S
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
2430
3230
pF
Output capacitance
C
oss
-
865
1150
Reverse transfer capacitance
C
rss
-
110
160
Turn-on delay time
t
d(on)
-
6.5
10
ns
Rise time
t
r
-
5.4
8.1
Turn-off delay time
t
d(off)
-
27
40
Fall time
t
f
-
4.0
6.0
Gate Charge Characteristics
4)
Gate to source charge
Q
gs
-
6.6
8.8
nC
Gate charge at threshold
Q
g(th)
-
3.9
5.2
Gate to drain charge
Q
gd
-
4.5
6.7
Switching charge
Q
sw
-
7.2
10
Gate charge total
Q
g
-
19
25
Gate plateau voltage
V
plateau
-
2.7
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
16
22
nC
Output charge
Q
oss
V
DD
=15 V, V
GS
=0 V
-
21
27
Reverse Diode
Diode continous forward current
I
S
-
-
2.5
A
Diode pulse current
I
S,pulse
-
-
60
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=2.5 A,
T
j
=25 C
-
0.73
1
V
Reverse recovery charge
Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt =400 A/s
-
-
10
nC
4)
See figure 16 for gate charge parameter definition
T
A
=25 C
Values
V
GS
=0 V, V
DS
=15 V,
f =1 MHz
V
DD
=15 V, V
GS
=10 V,
I
D
=7.5 A, R
G
=2.7
V
DD
=15 V, I
D
=7.5 A,
V
GS
=0 to 5 V
Rev. 1.11
page 3
2004-02-09
BSO072N03S
1 Power dissipation
2 Drain current
P
tot
=f(T
A
); t
p
10 s
I
D
=f(T
A
); V
GS
10 V; t
p
10 s
3 Safe operation area
4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 C
1)
; D =0
Z
thJS
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
10 s
100 s
1 ms
10 ms
10 s
DC
10
2
10
1
10
0
10
-1
10
2
10
1
10
0
10
-1
10
-2
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
2
10
1
10
0
10
-1
10
-2
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
t
p
[s]
Z
thJS
[K/W]
0
0.5
1
1.5
2
2.5
3
0
40
80
120
160
T
A
[C]
P
tot
[W]
0
4
8
12
16
0
40
80
120
160
T
A
[C]
I
D
[A]
Rev. 1.11
page 4
2004-02-09
BSO072N03S
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 C
R
DS(on)
=f(I
D
); T
j
=25 C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 C
parameter: T
j
3.4 V
3.6 V
3.8 V
4 V
4.2 V
4.5 V
5 V
10 V
0
4
8
12
16
0
10
20
30
I
D
[A]
R
D
S
(on)
[m
]
25 C
125 C
0
10
20
30
40
50
60
0
1
2
3
4
V
GS
[V]
I
D
[A]
0
20
40
60
80
0
10
20
30
I
D
[A]
g
fs
[S]
2.6 V
2.8 V
3 V
3.1 V
3.2 V
3.3 V
4.5 V
10 V
0
10
20
30
40
50
0
1
2
3
V
DS
[V]
I
D
[A]
Rev. 1.11
page 5
2004-02-09
BSO072N03S
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=15 A; V
GS
=10 V
V
GS(th)
=f(T
j
); V
GS
=V
DS
parameter: I
D
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f =1 MHz
I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
2
4
6
8
10
12
-60
-20
20
60
100
140
180
T
j
[C]
R
D
S
(on)
[m
]
45 A
450 A
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T
j
[C]
V
GS
(th)
[V]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
10
100
1000
10000
0
10
20
30
V
DS
[V]
C
[pF]
25 C
150 C
25 C, 98%
150 C, 98 %
10
2
10
1
10
0
10
-1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
[V]
I
F
[A]
Rev. 1.11
page 6
2004-02-09
BSO072N03S
13 Avalanche characteristics
14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25
V
GS
=f(Q
gate
); I
D
=7.5 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
6 V
15 V
24 V
0
2
4
6
8
10
12
0
10
20
30
40
Q
gate
[nC]
V
GS
[V]
20
22
24
26
28
30
32
34
36
-60
-20
20
60
100
140
180
T
j
[C]
V
BR(
DSS)
[V]
V
GS
Q
gate
V
g s(th)
Q
g (th)
Q
g s
Q
g d
Q
sw
Q
g
25 C
100 C
125 C
1
10
100
1
10
100
1000
t
AV
[s]
I
AV
[A]
Rev. 1.11
page 7
2004-02-09
BSO072N03S
Package Outline
P-DSO-8: Outline
Footprint
Packaging
Tape
Tube
Dimensions in mm
Rev. 1.11
page 8
2004-02-09
BSO072N03S
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strae 53
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts started herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.11
page 9
2004-02-09
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