2002-01-08
Page 1
Preliminary data
BSO203P
OptiMOS
-P Small-Signal-Transistor
Product Summary
V
DS
-20
V
R
DS(on)
21
m
I
D
-8.2
A
Feature
P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
150C operating temperature
Avalanche rated
dv/dt rated
SIS00070
G2
4
5
D2
S2
3
6
D2
G1
2
7
D1
S1
1
8
D1
Top View
Type
Package
Ordering Code
BSO203P
SO 8
Q67042-S4072
Maximum Ratings,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
-8.2
-6.6
A
Pulsed drain current
T
A
=25C
I
D puls
-32.8
Avalanche energy, single pulse
I
D
=-8.2 A , V
DD
=-10V, R
GS
=25
E
AS
97
mJ
Reverse diode dv/dt
I
S
=-8.2A, V
DS
=-16V, di/dt=200A/s, T
jmax
=150C
dv/dt
-6
kV/s
Gate source voltage
V
GS
12
V
Power dissipation
T
A
=25C
P
tot
2
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-01-08
Page 2
Preliminary data
BSO203P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
-
-
50
K/W
SMD version, device on PCB:
@ min. footprint, t < 10s
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
110
62.5
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250A
V
(BR)DSS
-20
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-100A
V
GS(th)
-0.6
0.9
-1.2
Zero gate voltage drain current
V
DS
=-20V, V
GS
=0, T
j
=25C
V
DS
=-20V, V
GS
=0, T
j
=150C
I
DSS
-
-
-0.1
-10
-1
-100
A
Gate-source leakage current
V
GS
=-12V, V
DS
=0
I
GSS
-
-10
-100
nA
Drain-source on-state resistance
V
GS
=-2.5V, I
D
=-6.4A
R
DS(on)
-
26
35
m
Drain-source on-state resistance
V
GS
=-4.5, I
D
=-8.2A
R
DS(on)
-
18.6
21
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air; t
10 sec.
2002-01-08
Page 3
Preliminary data
BSO203P
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*R
DS(on)max
I
D
=-6.6A
17
34
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-15V,
f=1MHz
-
2242
-
pF
Output capacitance
C
oss
-
852
-
Reverse transfer capacitance
C
rss
-
690
-
Turn-on delay time
t
d(on)
V
DD
=-10V, V
GS
=-4.5V,
I
D
=-1A, R
G
=6
-
15.5
23.2 ns
Rise time
t
r
-
25.9
38.9
Turn-off delay time
t
d(off)
-
59
88.5
Fall time
t
f
-
63.3
95
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-15V, I
D
=-8.2A
-
-3.5
-5.2
nC
Gate to drain charge
Q
gd
-
-15.1
-22.6
Gate charge total
Q
g
V
DD
=-15V, I
D
=-8.2A,
V
GS
=0 to -4.5V
-
-32.4
-48.6
Gate plateau voltage
V
(plateau) V
DD
=-15V, I
D
=-8.2A
-
-1.6
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
-2.5
A
Inverse diode direct current,
pulsed
I
SM
-
-
-32.8
Inverse diode forward voltage V
SD
V
GS
=0, I
F
=8.2A
-
0.85
1.3
V
Reverse recovery time
t
rr
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/s
-
35.7
44.6 ns
Reverse recovery charge
Q
rr
-
18.7
23.4 nC
2002-01-08
Page 4
Preliminary data
BSO203P
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2
BSO203P
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
|
4.5 V
0
20
40
60
80
100
120
C
160
T
A
0
-1
-2
-3
-4
-5
-6
-7
-8
A
-10
BSO203P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSO203P
I
D
R
DS
(o
n)
=
V
DS
/
I
D
DC
10 ms
1 ms
tp = 120.0s
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSO203P
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-01-08
Page 5
Preliminary data
BSO203P
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 80 s
0
2
4
6
V
10
- V
DS
0
10
20
30
40
50
60
70
A
90
-
I
D
Vgs = -2.5V
Vgs = -3V
Vgs = -3.5V
Vgs = -2V
Vgs = -4V
Vgs = -4.5V
Vgs = -6V
Vgs = -10V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0
5
10
15
20
25
30
35
40
A
50
- I
D
0
0.005
0.01
0.015
0.02
0.03
R
DS
(
on)
Vgs = -2.5V
Vgs = -3.5V
Vgs = -3V
Vgs = -4V
Vgs = -4.5V
Vgs = -5V
Vgs = -6V
Vgs = -8V
Vgs = -10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|
2 x |I
D
| x R
DS(on)max
parameter: t
p
= 80 s
0
0.5
1
1.5
2
V
3
- V
GS
0
5
10
15
20
25
A
35
-
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25C
parameter: tp = 80 s
0
5
10
15
20
25
A
35
- I
D
0
10
20
30
40
S
60
g
fs
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