ChipFind - документация

Электронный компонент: BSP170PE6433

Скачать:  PDF   ZIP
2002-01-16
Page 1
Final data
BSP 170 P
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
-60
V
R
DS(on)
0.3
I
D
-1.9
A
Feature
P-Channel
Enhancement mode
Avalanche rated
dv/dt rated
SOT-223
VPS05163
1
2
3
4
Gate
pin1
Drain
pin 2
Source
pin 3
Type
Package
Ordering Code
BSP 170 P
SOT-223
Q67041-S4018
Maximum Ratings
,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
-1.9
-1.5
A
Pulsed drain current
T
A
=25C
I
D puls
-7.6
Avalanche energy, single pulse
I
D
=-1.9 A ,
V
DD
=-25V,
R
GS
=25
E
AS
70
mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.18
Reverse diode dv/dt
I
S
=-1.9A,
V
DS
=-48V, d
i
/d
t
=-200A/s,
T
jmax
=150C
dv/dt
-6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
A
=25C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-01-16
Page 2
Final data
BSP 170 P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
thJS
-
-
20
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
110
70
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250A
V
(BR)DSS
-60
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-250A
V
GS(th)
-2.1
-3
-4
Zero gate voltage drain current
V
DS
=-60V, V
GS
=0, T
j
=25C
V
DS
=-60V, V
GS
=0, T
j
=125C
I
DSS
-
-
-0.1
-10
-1
-100
A
Gate-source leakage current
V
GS
=-20V, V
DS
=0
I
GSS
-
-10
-100 nA
Drain-source on-state resistance
V
GS
=-10V, I
D
=-1.9
R
DS(on)
-
0.24
0.3
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2002-01-16
Page 3
Final data
BSP 170 P
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=-1.9
1.4
2.8
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
-
328
410
pF
Output capacitance
C
oss
-
105
135
Reverse transfer capacitance
C
rss
-
38
48
Turn-on delay time
t
d(on)
V
DD
=-30V, V
GS
=-10V,
I
D
=-1.9A, R
G
=6
-
14
21
ns
Rise time
t
r
-
28
42
Turn-off delay time
t
d(off)
-
92
138
Fall time
t
f
-
60
90
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-48V, I
D
=-1.9A
-
-1.4
-2.1
nC
Gate to drain charge
Q
gd
-
-3.6
-5.4
Gate charge total
Q
g
V
DD
=-48V, I
D
=-1.9A,
V
GS
=0 to -10V
-
-12.5
-16
Gate plateau voltage
V
(plateau) V
DD
=-48V, I
D
=-1.9A
-
-3.85
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
-1.9
A
Inverse diode direct current,
pulsed
I
SM
-
-
-7.6
Inverse diode forward voltage V
SD
V
GS
=0, I
F
=-1.9A
-
-0.85
-1.1
V
Reverse recovery time
t
rr
V
R
=-30V, I
F=
l
S
,
di
F
/dt=-100A/s
-
36
54
ns
Reverse recovery charge
Q
rr
V
R
=-30V, I
F=
l
S
,
di
F
/dt=100A/s
-
41
62
nC
2002-01-16
Page 4
Final data
BSP 170 P
1 Power dissipation
P
tot
= f (TA)
0
20
40
60
80
100
120
C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP 170 P
P
tot
2 Drain current
I
D
= f (TA)
parameter: |V
GS
|
10V
0
20
40
60
80
100
120
C
160
T
A
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
A
-2
BSP 170 P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , TA = 25C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
A
BSP 170 P
I
D
R
D
S(
on
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
tp = 340.0s
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP 170 P
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-01-16
Page 5
Final data
BSP 170 P
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 80 s
0
-0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4
V
-5
V
DS
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
A
-5
BSP 170 P
I
D
VGS [V]
a
a
-4.0
b
b
-4.5
c
c
-5.0
d
d
-5.5
e
e
-6.0
f
f
-6.5
g
P
tot
= 1.8W
g
-7.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0
-0.4 -0.8 -1.2 -1.6
-2
-2.4 -2.8
A
-3.4
I
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1
BSP 170 P
R
DS(on)
V
GS
[V] =
a
a
-4.0
b
b
-4.5
c
c
-5.0
d
d
-5.5
e
e
-6.0
f
f
-6.5
g
g
-7.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 s
0
1
2
3
4
5
6
V
8
- V
GS
0
2
4
6
8
10
12
A
16
-
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25C
parameter: tp = 80 s
0
3
6
9
A
15
- I
D
0
1
2
3
4
S
6
gfs
2002-01-16
Page 6
Final data
BSP 170 P
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= -1.9 , V
GS
= -10 V
-60
-20
20
60
100
C
180
T
j
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
BSP 170 P
R
DS(on)
typ
98%
10 Gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS
, I
D
= -250 A
-60
-20
20
60
100
C
160
T
j
1
1.5
2
2.5
3
3.5
V
4.5
-
V
GS(th)
typ.
2%
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz
0
5
10
15
20
V
30
- V
DS
1
10
2
10
3
10
pF

C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj , t
p
= 80 s
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
V
-3
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSP 170 P
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
2002-01-16
Page 7
Final data
BSP 170 P
13 Typ. avalanche energy
E
AS
= f (T
j
)
par.: I
D
= -1.9 A , V
DD
= -25 V, R
GS
= 25
25
45
65
85
105
125
C
165
Tj
0
10
20
30
40
50
60
mJ
80
E
AS
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= -1.9 A pulsed
0
2
4
6
8
10
12
14
16
nC
20
|Q
Gate
|
0
-2
-4
-6
-8
-10
-12
V
-16
BSP 170 P
V
GS
0,8 V
DS max
DS max
V
0,2
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
C
180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSP 170 P
V
(BR)DSS
2002-01-16
Page 8
Final data
BSP 170 P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.