1999-10-28
Page 1
BSP318S
Final data
SIPMOS
Small-Signal-Transistor
Features
N-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v/dt rated
Product Summary
Drain source voltage
V
V
DS
60
Drain-Source on-state resistance
R
DS(on)
0.09
Continuous drain current
A
I
D
2.6
VPS05163
1
2
3
4
Type
Package
Ordering Code
BSP318S
SOT-223
Q67000-S4002
Pin 1
Pin 2, 4
PIN 3
G
D
S
Maximum Ratings,at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
2.6
A
I
D
Pulsed drain current
T
A
= 25 C
I
D puls
10.4
Avalanche energy, single pulse
I
D
= 2.6 A,
V
DD
= 25 V,
R
GS
= 25
60
mJ
E
AS
Avalanche current,periodic limited by
T
jmax
A
I
AR
2.6
Avalanche energy, periodic limited by
T
jmax
0.18
mJ
E
AR
Reverse diode d
v/dt
I
S
= 2.6 A,
V
DS
= 20 V, d
i/dt = 200 A/s,
T
jmax
= 150 C
kV/s
d
v/dt
6
Gate source voltage
20
V
V
GS
Power dissipation
T
A
= 25 C
W
P
tot
1.8
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
1999-10-28
Page 2
BSP318S
Final data
Thermal Characteristics
Parameter
Symbol
Unit
Values
typ.
max.
min.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
K/W
-
R
thJS
-
17
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
100
-
-
70
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Values
Symbol
Unit
max.
typ.
min.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
V
(BR)DSS
60
-
V
-
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 20 A
1.2
1.6
V
GS(th)
2
Zero gate voltage drain current
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 150 C
1
100
0.1
-
A
I
DSS
-
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
10
nA
100
-
R
DS(on)
-
0.12
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 2.6 A
0.15
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 2.6 A
R
DS(on)
-
0.07
0.09
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
1999-10-28
Page 3
BSP318S
Final data
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 2.6 A
g
fs
2.4
S
-
5.5
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
-
380
pF
300
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
-
90
120
C
oss
65
50
-
C
rss
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
t
d(on)
12
ns
20
-
Rise time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
t
r
-
15
25
20
30
t
d(off)
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
-
Fall time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
t
f
-
15
25
1999-10-28
Page 4
BSP318S
Final data
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate charge at threshold
V
DD
= 40 V,
I
D
= 0.1 A, V = 1 V
-
Q
G(th)
nC
0.6
0.4
Gate charge at
V
GS
= 5 V
V
DD
= 40 V,
I
D
= 2.6 A,
V
GS
= 0 to 5 V
Qg(5)
7
10
-
20
-
Q
g
Gate charge total
V
DD
= 40 V,
I
D
= 2.6 A,
V
GS
= 0 to 10 V
14
Gate plateau voltage
V
DD
= 40 V ,
I
D
= 2.6 A
V
(plateau)
-
3.6
-
V
Parameter
Values
Symbol
Unit
max.
typ.
min.
Reverse Diode
A
-
-
2.6
I
S
Inverse diode continuous forward current
T
A
= 25 C
Inverse diode direct current,pulsed
T
A
= 25 C
-
I
SM
-
10.4
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 5.2 A
V
1.2
V
SD
0.95
-
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t = 100 A/s
-
75
ns
50
t
rr
-
0.1
0.15
Q
rr
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t = 100 A/s
C
1999-10-28
Page 5
BSP318S
Final data
Power Dissipation
P
tot
=
f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
1.9
BSP318S
P
tot
Drain current
I
D
=
f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
A
2.8
BSP318S
I
D
Safe operating area
I
D
=
f ( V
DS
)
parameter :
D = 0 , T
A
= 25 C
10
-1
10
0
10
1
10
2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSP318S
I
D
R
D
S
(on)
=
V
D
S
/
I
D
DC
10 ms
1 ms
t
p
= 140.0s
Transient thermal impedance
Z
thJA
=
f(t
p
)
parameter :
D = t
p
/
T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP318S
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
1999-10-28
Page 6
BSP318S
Final data
Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25C
parameter:
t
p
= 80 s
0.0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
V
5.0
V
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
6.5
BSP318S
I
D
V
GS
[V]
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
5.5
i
i
6.0
j
j
7.0
k
k
8.0
l
P
tot
= 1.80W
l
10.0
Typ. transfer characteristics
I
D
=
f ( V
GS
)
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 s
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
1
2
3
4
5
6
7
8
9
10
11
12
A
15
I
D
Drain-source on-resistance
R
DS(on)
=
f (T
j
)
parameter :
I
D
= 2.6 A,
V
GS
= 4.5 V
-60
-20
20
60
100
C
180
T
j
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.36
BSP318S
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
=
f (Tj)
parameter:
V
GS
=
V
DS
,
I
D
= 20 A
-60
-20
20
60
100
140
C
200
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
min
typ
max
1999-10-28
Page 7
BSP318S
Final data
Typ. capacitances
C = f(V
DS
)
parameter:
V
GS
=0 V,
f=1 MHz
0
5
10
15
20
25
30
V
40
V
DS
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
=
f (V
SD
)
parameter:
Tj , t
p
= 80 s
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
-1
10
0
10
1
10
2
10
A
BSP318S
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
Avalanche Energy
E
AS
=
f (T
j
)
parameter:
I
D
= 2.6 A,
V
DD
= 25 V
R
GS
= 25
20
40
60
80
100
120
C
160
T
j
0
5
10
15
20
25
30
35
40
45
50
55
mJ
65
E
AS
Typ. gate charge
V
GS
= f (Q
Gate
)
parameter:
I
D
= 2.6 A pulsed
0
4
8
12
16
nC
24
Q
Gate
0
2
4
6
8
10
12
V
16
BSP318S
V
GS
DS max
V
0,8
DS max
V
0,2
1999-10-28
Page 8
BSP318S
Final data
Drain-source breakdown voltage
V
(BR)DSS
= f
(T
j
)
-60
-20
20
60
100
C
180
T
j
54
56
58
60
62
64
66
68
V
72
BSP318S
V
(BR)DSS
1999-10-28
Page 9
BSP318S
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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