BSP 88
Data Sheet
2
05.99
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
72
K/W
Thermal resistance, junction-soldering point
1)
R
thJS
12
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 C
V
(BR)DSS
240
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.6
0.8
1.2
Zero gate voltage drain current
V
DS
= 240 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= 240 V, V
GS
= 0 V, T
j
= 125 C
V
DS
= 100 V, V
GS
= 0 V, T
j
= 25 C
I
DSS
-
-
-
-
10
0.1
100
100
1
A
nA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 4.5 V, I
D
= 0.32 A
V
GS
= 2.8 V, I
D
= 14 mA
R
DS(on)
-
-
6
4
15
8
BSP 88
Data Sheet
3
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.32 A
g
fs
0.14
0.34
-
S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
-
80
110
pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
-
15
25
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
-
8
12
Turn-on delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
d(on)
-
5
8
ns
Rise time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
r
-
10
15
Turn-off delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
d(off)
-
30
40
Fall time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
f
-
25
35
BSP 88
Data Sheet
4
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
0.32
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
1.28
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 0.5 A, T
j
= 25 C
V
SD
-
1.05
1.3
V
BSP 88
Data Sheet
6
05.99
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 s ,
T
j
= 25 C
0
1
2
3
4
5
6
7
V
9
V
DS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
A
0.75
I
D
V
GS
[V]
a
a
1.5
b
b
2.0
c
c
2.5
d
d
3.0
e
e
3.5
f
f
4.0
g
g
4.5
h
h
5.0
i
i
6.0
j
j
7.0
k
k
8.0
l
P
tot
= 2W
l
10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0.00
0.10
0.20
0.30
0.40
0.50
A
0.65
I
D
0
2
4
6
8
10
12
14
16
18
20
22
26
R
DS (on)
V
GS
[V] =
a
a
1.5
b
b
2.0
c
c
2.5
d
d
3.0
e
e
3.5
f
f
4.0
g
g
4.5
h
h
5.0
i
i
6.0
j
j
7.0
k
k
8.0
l
l
10.0
Typ. transfer characteristics I
D
= f
(V
GS
)
parameter: t
p
= 80 s
0
1
2
3
4
5
6
7
8
V
10
V
GS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
A
1.3
I
D
Typ. forward transconductance
g
fs
= f (I
D
)
parameter: t
p
= 80 s,
0.0
0.2
0.4
0.6
0.8
A
1.1
I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
S
0.55
g
fs
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