BSS 123
Data Sheet
2
05.99
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
1)
R
thJA
350
K/W
Therminal resistance, chip-substrate- reverse side
1)
R
thJSR
285
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 C
V
(BR)DSS
100
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
1.5
2
Zero gate voltage drain current
V
DS
= 100 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= 100 V, V
GS
= 0 V, T
j
= 125 C
V
DS
= 20 V, V
GS
= 0 V, T
j
= 25 C
I
DSS
-
-
-
-
2
0.1
10
60
1
A
nA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
-
10
50
nA
Drain-Source on-state resistance
V
GS
= 10 V, I
D
= 0.17 A
V
GS
= 4.5 V, I
D
= 0.17 A
R
DS(on)
-
-
4.5
3
10
6
BSS 123
Data Sheet
3
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.17 A
g
fs
0.08
0.2
-
S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
-
65
85
pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
-
10
15
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
-
4
6
Turn-on delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
d(on)
-
5
8
ns
Rise time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
r
-
5
8
Turn-off delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
d(off)
-
10
13
Fall time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.28 A
R
GS
= 50
t
f
-
12
16
BSS 123
Data Sheet
4
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
0.17
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
0.68
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 0.34 A, T
j
= 25 C
V
SD
-
0.85
1.3
V
BSS 123
Data Sheet
6
05.99
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 s ,
T
j
= 25 C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
DS
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
A
0.38
I
D
V
GS
[V]
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
6.0
i
i
7.0
j
j
8.0
k
k
9.0
l
P
tot
= 0W
l
10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0.00
0.04
0.08
0.12
0.16
0.20
A
0.28
I
D
0
2
4
6
8
10
12
14
16
19
R
DS (on)
V
GS
[V] =
a
2.0
V
GS
[V] =
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
6.0
h
h
7.0
i
i
8.0
j
j
9.0
k
k
10.0
Typ. transfer characteristics
I
D
= f
(V
GS
)
parameter: t
p
= 80 s
V
DS
2 x I
D
x R
DS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A
1.0
I
D
Typ. forward transconductance
g
fs
= f (I
D
)
parameter: t
p
= 80 s,
V
DS
2 x I
D
x R
DS(on)max
0.0
0.1
0.2
0.3
0.4
0.5
0.6
A
0.8
I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
S
0.40
g
fs