BSS 131
Data Sheet
2
05.99
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
350
K/W
Therminal resistance, chip-substrate- reverse side
1)
R
thJSR
285
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 C
V
(BR)DSS
240
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
1.4
2
Zero gate voltage drain current
V
DS
= 240 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= 240 V, V
GS
= 0 V, T
j
= 125 C
V
DS
= 130 V, V
GS
= 0 V, T
j
= 25 C
I
DSS
-
-
-
-
2
0.1
30
60
1
A
nA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
-
1
10
nA
Drain-Source on-state resistance
V
GS
= 10 V, I
D
= 0.1 A
V
GS
= 4.5 V, I
D
= 0.1 A
R
DS(on)
-
-
15
12
26
16
BSS 131
Data Sheet
3
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.1 A
g
fs
0.06
0.14
-
S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
-
60
80
pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
-
8
12
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
-
3.5
5
Turn-on delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.26 A
R
GS
= 50
t
d(on)
-
5
8
ns
Rise time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.26 A
R
GS
= 50
t
r
-
8
12
Turn-off delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.26 A
R
GS
= 50
t
d(off)
-
12
16
Fall time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.26 A
R
GS
= 50
t
f
-
15
20
BSS 131
Data Sheet
4
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
0.1
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
0.4
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 0.2 A, T
j
= 25 C
V
SD
-
0.8
1.2
V