BSS80, BSS82
1
Nov-30-2001
PNP Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BSS80B
BSS80C
BSS82B
BSS82C
CHs
CJs
CLs
CMs
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
BSS80
BSS82
Unit
Collector-emitter voltage
V
CEO
40
60
V
Collector-base voltage
V
CBO
60
V
Emitter-base voltage
V
EBO
5
DC collector current
I
C
800
mA
Peak collector current
I
CM
1
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
, T
S
= 77 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
220
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BSS80, BSS82
2
Nov-30-2001
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BSS80
BSS82
V
(BR)CEO
40
60
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
60
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 50 V, I
E
= 0
I
CBO
-
-
10
nA
Collector cutoff current
V
CB
= 50 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
10
A
Emitter cutoff current
V
EB
= 3 V, I
C
= 0
I
EBO
-
-
10
nA
DC current gain 1)
I
C
= 100 A, V
CE
= 10 V
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
BSS80/82B
BSS80/82C
BSS80/82B
BSS80/82C
BSS80/82B
BSS80/82C
BSS80/82B
BSS80/82C
BSS80/82B
BSS80/82C
h
FE
40
75
40
100
40
100
40
100
40
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120
300
-
-
-
Collector-emitter saturation voltage1)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
-
-
0.4
1.6
V
Base-emitter saturation voltage 1)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
-
-
-
-
1.3
2.6
1) Pulse test: t
=
300
s, D = 2%
BSS80, BSS82
3
Nov-30-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
6
-
pF
Delay time
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA,
V
BE(off)
= 0.5 V
t
d
-
-
10
ns
Rise time
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA,
V
BE(off)
= 0.5 V
t
r
-
-
40
Storage time
V
CC
= 30 V, I
C
= 150 mA, I
B1
=I
B2
= 15mA
t
stg
-
-
80
Fall time
V
CC
= 30 V, I
C
= 150 mA, I
B1
=I
B2
=
15mA
t
f
-
-
30
Test circuits
Delay and rise time
Storage and fall time
EHN00047
Input
Z
0
200
Osc.
r
t
50
1
-30
= 50
< 2 ns
< 5 ns
t
r
200
-16
0
V
ns
V
k
EHN00048
37
-6
-30
0
+15 V
1
k
V
V
< 2ns
= 50
Input
t
Z
r
0
200 ns
1
k
50
Osc.
< 5 ns
t
r
BSS80, BSS82
4
Nov-30-2001
Collector-base capacitance C
CB
= f (V
CB
)
f = 1MHz
EHP00680
BSS 80/82
10
pF
10
10
V
C
CB
10
5
10
cb
5
5
5
-1
0
1
2
10
2
1
10
0
5
V
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Transition frequency f
T
= f (I
C
)
V
CE
= 20V
EHP00682
BSS 80/82
10
MHz
10
10
mA
f
C
10
5
10
T
5
5
5
0
1
2
3
10
3
2
10
1
5
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00681
BSS 80/82
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot max
tot
P
DC
P
p
t
t
p
=
D
T
t
p
T
BSS80, BSS82
5
Nov-30-2001
Saturation voltage I
C
= f (V
BEsat
, V
CEsat
)
h
FE
= 10
EHP00683
BSS 80/82
10
0
V
10
3
1
10
-1
5
10
0
5
mA
0.2
0.4
0.6
0.8
1.0
1.2
1.6
5
10
2
V
BE
V
CE
CE sat
BE sat
V
V
,
C
Delay time t
d
= f (I
C
)
Rise time t
r
= f (I
C
)
EHP00684
BSS 80/82
10
10
mA
5
10
3
2
10
1
5
10
10
0
1
2
5
5
ns
3
10
5
t
d
t
r
r
t t
,
d
C
CC
CC
V
V
= 0 V
= 20 V
BE
BE
,
V
,
V
= 30 V
= 10 V,
Fall time t
f
= f (I
C
)
EHP00686
BSS 80/82
10
10
mA
5
10
3
2
10
1
5
10
10
0
1
2
5
5
ns
FE
h
= 10
3
10
5
FE
= 20
h
V
CC
= 30 V
t
f
C
Storage time t
stg
= f(I
C
)
EHP00685
BSS 80/82
10
10
mA
t
C
5
stg
10
3
2
10
1
5
10
10
0
1
2
5
5
ns
FE
h
= 10
3
10
5
FE
= 20
h
BSS80, BSS82
6
Nov-30-2001
DC current gain h
FE
= f (I
C
)
V
CE
= 10V
EHP00687
BSS 80/82
10
10
mA
h
C
10
5
FE
10
3
2
10
1
5
10
10
10
-1
0
1
2
3
-50 C
25 C
150 C
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