2003-06-23
Page 1
BSS 83 P
Rev. 1.0
SIPMOS
Small-Signal-Transistor
Features
P-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v
/d
t
rated
Product Summary
Drain source voltage
V
V
DS
-60
Drain-source on-state resistance
R
DS(on)
2
W
Continuous drain current
A
I
D
-0.33
1
2
3
VPS05161
Type
Package
Ordering Code
BSS 83 P
SOT-23
Q67041-S1416
Marking
YAs
Pin 1
PIN 2
PIN 3
G
S
D
Maximum Ratings,at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Unit
Value
-0.33
-0.27
A
Continuous drain current
T
A
= 25 C
T
A
= 70 C
I
D
Pulsed drain current
T
A
= 25 C
I
D puls
-1.32
Avalanche energy, single pulse
I
D
= -0.33 A ,
V
DD
= -25 V,
R
GS
= 25
W
9.5
mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR
0.036
d
v
/d
t
6
Reverse diode d
v
/d
t
I
S
= -0.33 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/s,
T
jmax
= 150 C
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25 C
P
tot
0.36
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2003-06-23
Page 2
BSS 83 P
Rev. 1.0
Thermal Characteristics
Parameter
Symbol
Unit
Values
min.
max.
typ.
Characteristics
Thermal resistance, junction - soldering point
( Pin 3 )
150
K/W
-
R
thJS
-
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -250 A
V
(BR)DSS
-60
-
V
-
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -80 A
-1
-1.5
-2
V
GS(th)
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 C
A
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS
-
-10
-100
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
nA
Drain-source on-state resistance
V
GS
= -4.5 V,
I
D
= -0.27 A
R
DS(on)
-
2
3
W
Drain-source on-state resistance
V
GS
= -10 V,
I
D
= -0.33 A
R
DS(on)
-
1.4
2
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2003-06-23
Page 3
BSS 83 P
Rev. 1.0
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= -0.27 A
0.24
g
fs
S
-
0.47
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
iss
62
78
pF
-
C
oss
-
24
19
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
9
7
C
rss
-
Turn-on delay time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
W
-
35
ns
23
t
d(on)
Rise time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
W
t
r
-
106
71
56
70
t
d(off)
Turn-off delay time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
W
-
Fall time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
W
t
f
-
61
76
2003-06-23
Page 4
BSS 83 P
Rev. 1.0
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Unit
Values
Symbol
Parameter
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= -48 V,
I
D
= -0.33 A
-
Q
gs
nC
0.18
0.12
Gate to drain charge
V
DD
= -48 ,
I
D
= -0.33 A
Q
gd
1.1
1.65
-
3.57
-
Q
g
Gate charge total
V
DD
= -48 V,
I
D
= -0.33 A,
V
GS
= 0 to -10 V
2.38
Gate plateau voltage
V
DD
= -48 V ,
I
D
= -0.33 A
V
(plateau)
-
-2.94
-
V
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
-0.33
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
-1.32
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -0.33
V
SD
-
-0.84
-1.1
V
Reverse recovery time
V
R
= -30 V,
I
F
=
I
S
, d
i
F
/d
t = 80 A/s
t
rr
-
59.4
89
ns
Reverse recovery charge
V
R
= -30 V,
I
F=
l
S
, d
i
F
/d
t = 80 A/s
Q
rr
-
37.5
56
nC
2003-06-23
Page 5
BSS 83 P
Rev. 1.0
Drain current
I
D
=
f (T
A
)
parameter:
V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
A
-0.36
BSS 83 P
I
D
Power Dissipation
P
tot
=
f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
W
0.38
BSS 83 P
P
tot
Transient thermal impedance
Z
thJC
=
f (t
p
)
parameter :
D = t
p
/
T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
BSS 83 P
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D
=
f ( V
DS
)
parameter :
D = 0 , T
A
= 25 C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS 83 P
I
D
R
D
S
(on)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 s
t
p
= 88.0s
2003-06-23
Page 6
BSS 83 P
Rev. 1.0
Typ. drain-source-on-resistance
R
DS(on)
=
f (I
D
)
parameter:
V
GS
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
A
-0.65
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
W
6.5
BSS 83 P
R
DS(on)
a
V
GS
[V] =
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
l
-10.0
Typ. output characteristic
I
D
=
f (V
DS
);
T
j
=25C
parameter:
t
p
= 80 s
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
-5.0
V
DS
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
-0.60
A
-0.80
BSS 83 P
I
D
V
GS
[V]
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
P
tot
= 0W
l
-10.0
Typ. transfer characteristics
I
D
=
f ( V
GS
)
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 s
0.0
-1.0
-2.0
-3.0
-4.0
V
-6.0
V
GS
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
A
-1.2
I
D
Typ. forward transconductance
g
fs
= f(
I
D
);
T
j
=25C
parameter:
g
fs
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
A
-0.70
ID
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
S
0.70
gfs
2003-06-23
Page 7
BSS 83 P
Rev. 1.0
Drain-source on-state resistance
R
DS(on)
=
f (T
j
)
parameter :
I
D
= -0.33 A,
V
GS
= -10 V
-60
-20
20
60
100
C
180
T
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
W
5.5
BSS 83 P
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
=
f (Tj)
parameter:
V
GS
=
V
DS
,
I
D
= -80 A
-60
-20
20
60
100
C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
2%
-60
-20
20
60
100
C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
typ
-60
-20
20
60
100
C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
98%
-60
-20
20
60
100
C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
=0V,
f=1 MHz
0
-5
-10
-15
-20
-25
V
-35
V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
=
f (V
SD
)
parameter:
Tj , t
p
= 80 s
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSS 83 P
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
2003-06-23
Page 8
BSS 83 P
Rev. 1.0
Avalanche energy
E
AS
=
f (T
j
)
para.:
I
D
= -0.33 A ,
V
DD
= -25 V,
R
GS
= 25
25
45
65
85
105
125
C
165
T
j
0
1
2
3
4
5
6
7
8
mJ
10
E
AS
Typ. gate charge
V
GS
= f (Q
Gate
)
parameter:
I
D
= -0.33 A pulsed
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
nC
3.4
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSS 83 P
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
=
f (T
j
)
-60
-20
20
60
100
C
180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSS 83 P
V
(BR)DSS
2003-06-23
Page 9
BSS 83 P
Rev. 1.0
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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