TEMPFET
BTS 129
1 19.02.04
3
2
1
Features
q
N channel
q
Enhancement mode
q
Temperature sensor with thyristor characteristic
q
The drain pin is electrically shorted to the tab
Pin
1
2
3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BTS 129
60 V
27 A
0.05
TO-220AB
C67078-A5013-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
60
V
Drain-gate voltage,
R
GS
= 20 k
V
DGR
60
Gate-source peak voltage, aperiodic
V
gs
20
Continuous drain current,
T
C
= 25
C
I
D
27
A
ISO drain current
T
C
= 85
C,
V
GS
= 10 V,
V
DS
= 0.5 V
I
D-ISO
7.5
Pulsed drain current,
T
C
= 25
C
I
D puls
108
Short circuit current,
T
j
= 55 ... + 150
C
I
SC
80
Short circuit dissipation,
T
j
= 55 ... + 150
C
P
SCmax
1200
W
Power dissipation
P
tot
75
Operating and storage temperature range
T
j
,
T
stg
55 ... + 150
C
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55/150/56
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
1.67
75
K/W
TEMPFET
BTS 129
2 19.02.04
Electrical Characteristics
at
T
j
= 25
C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0
, I
D
= 0.25 mA
V
(BR)DSS
60
V
Gate threshold voltage
V
GS
=
V
DS
, I
D
= 1 mA
V
GS(th)
2.5
3.0
3.5
Zero gate voltage drain current
V
GS
= 0 V,
V
DS
= 60 V
T
j
= 25
C
T
j
= 150
C
I
DSS
1
100
10
300
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
T
j
= 25
C
T
j
= 150
C
I
GSS
10
2
100
4
nA
A
Drain-source on-state resistance
V
GS
= 10 V
, I
D
=17 A
R
DS(on)
0.04
0.05
Dynamic Characteristics
Forward transconductance
V
DS
2
I
D
R
DS(on)max
,
I
D
= 17 A
g
fs
8.0
13.0
18.0
S
Input capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
C
iss
700
940
1250
pF
Output capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
C
oss
500
750
Reverse transfer capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
C
rss
180
270
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
GS
= 50
t
d(on)
25
40
ns
t
r
60
90
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
GS
= 50
t
d(off)
100
130
t
f
75
95
TEMPFET
BTS 129
3 19.02.04
Electrical Characteristics (cont'd)
at
T
j
= 25
C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous source current
I
S
27
A
Pulsed source current
I
SM
108
Diode forward on-voltage
I
F
= 27 A,
V
GS
= 0 V
V
SD
1.3 1.8
V
Reverse recovery time
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
s,
V
R
= 30 V
t
rr
150
ns
Reverse recovery charge
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
s,
V
R
= 30 V
Q
rr
1.0
C
Temperature Sensor
Forward voltage
I
TS(on)
= 10 mA,
T
j
= 55 ... + 150
C
Sensor override,
t
p
100
s
T
j
= 55 ... + 160
C
V
TS(on)
0.7
1.4
1.5
10
V
Forward current
T
j
= 55 ... + 150
C
Sensor override,
t
p
100
s
T
j
= 55 ... + 160
C
I
TS(on)
10
600
mA
Holding current,
V
TS(off)
= 5 V,
T
j
= 25
C
T
j
= 150
C
I
H
0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
V
TS
= 5 V
T
TS(on)
150
C
Turn-off time
V
TS
= 5 V,
I
TS(on)
= 2 mA
t
off
0.5
2.5
s
TEMPFET
BTS 129
4 19.02.04
Examples for short-circuit protection
at
T
j
= 55 ... + 150
C, unless otherwise specified.
Parameter
Symbol
Examples
Unit
1
2
Drain-source voltage
V
DS
15
30
V
Gate-source voltage
V
GS
8.1
5.9
Short-circuit current
I
SC
80
37
A
Short-circuit dissipation
P
SC
1200
1100
W
Response time
T
j
= 25
C, before short circuit
t
SC(off)
25
25
ms
Short-circuit protection
I
SC
=
f
(
V
DS
)
Parameter
: V
GS
Diagram to determine
I
SC
for
T
j
= 55 ... + 150
C
Max. gate voltage
V
GS(SC)
=
f
(
V
DS
)
Parameter:
T
j
= 55 ... + 150
C
TEMPFET
BTS 129
5 19.02.04
Typical output characteristics
I
D
=
f
(
V
DS
)
Parameter
: t
p
= 80
s
Typ. drain-source on-state resistance
R
DS(on)
=
f
(
I
D
)
Parameter
: V
GS
SIT00562
0
20
P
tot
D
BTS 129
A
1
2
3
4
5
V
0
10
30
40
50
= 75W
V
GS
= 20V
9V
8V
7.5V
6.5V
6V
5.5V
5V
4.5V
4V
DS
V
60
10V
7V
Safe operating area
I
D
=
f
(
V
DS
)
Parameter:
D
= 0.01,
T
C
= 25
C
Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
Parameter:
I
D
= 17 A,
V
GS
= 10 V (spread)
TEMPFET
BTS 129
6 19.02.04
Typ. transfer characteristic
I
D
=
f
(
V
GS
)
Parameter
: t
p
= 80
s,
V
DS
= 25 V
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
Parameter
: V
DS
=
V
GS
,
I
D
= 1 mA
Typ. transconductance
g
fs
=
f
(
I
D
)
Parameter:
t
p
= 80
s,
V
DS
= 25 V
Continuous drain current
I
D
=
f
(
T
C
)
Parameter:
V
GS
10 V
TEMPFET
BTS 129
7 19.02.04
Typ. gate-source leakage current
I
GSS
=
f
(
T
C
)
Parameter:
V
GS
= 20 V,
V
DS
= 0
Forward characteristics of reverse diode
I
F
=
f
(
V
SD
)
Parameter
: T
j
,
t
p
= 80
s
Typ. capacitances
C
=
f
(
V
DS
)
Parameter:
V
GS
= 0,
f
= 1 MHz
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
Parameter
: D
=
t
p
/
T
TEMPFET
BTS 129
8 19.02.04
TO 220 AB
Ordering Code
Standard
C67078-A5013-A2
3.7
9.5
9.9
4.6
0.75
1.05
2.54
2.54
17.5
2.8
12.8
0.5
2.4
13.5
9.2
15.6
1.3
4.4
GPT05155
1)
3) max. 14.5 by dip tinning press burr max. 0.05
2) dip tinning
1) punch direction, burr max. 0.04
3)
2)
1
TEMPFET
BTS 129
9 19.02.04
Edition 04.97
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen, Germany
Infineon Technologies AG 2000.
All Rights Reserved.
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