2002-09-04
Page 1
HITFET
====
BTS 3118 D
Smart Lowside Power Switch
Product Summary
Drain source voltage
V
DS
42
V
On-state resistance
R
DS(on)
100
m
Nominal load current
I
D(Nom)
2.4
A
Clamping energy
E
AS
2
J
Features
Logic Level Input
Input Protection (ESD)
Thermal shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
C compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
V
bb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
2002-09-04
Page 2
BTS 3118 D
Maximum Ratings at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Drain source voltage
V
DS
42
V
Drain source voltage for short circuit protection
T
j
= -40...150C
V
DS(SC)
20
Continuous input current
-0.2V
V
IN
10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
| I
IN
|
2
mA
Operating temperature
T
j
-40 ...+150
C
Storage temperature
T
stg
-55 ... +150
Power dissipation
T
C
= 85 C
6cm
2
cooling area , T
A
= 85 C
P
tot
21
1.1
W
Unclamped single pulse inductive energy
1)
E
AS
2
J
Load dump protection V
LoadDump
2)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2
,
R
L
= 6
, V
A
= 13.5 V
V
LD
58
V
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
2
kV
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
R
thJC
3
K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
115
55
1 Not tested, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain
connection. PCB mounted vertical without blown air.
2002-09-04
Page 3
BTS 3118 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA
V
DS(AZ)
42
-
55
V
Off-state drain current T
j
= -40 ... +150C
V
DS
= 32 V, V
IN
= 0 V
I
DSS
-
1.5
10
A
Input threshold voltage
I
D
= 0.3 mA, T
j
= 25 C
I
D
= 0.3 mA, T
j
= 150 C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current
I
IN(on)
-
10
30
A
On-state resistance
V
IN
= 5 V, I
D
= 2.2 A, T
j
= 25 C
V
IN
= 5 V, I
D
= 2.2 A, T
j
= 150 C
R
DS(on)
-
-
90
160
120
240
m
On-state resistance
V
IN
= 10 V, I
D
= 2.2 A, T
j
= 25 C
V
IN
= 10 V, I
D
= 2.2 A, T
j
= 150 C
R
DS(on)
-
-
70
130
100
200
Nominal load current
T
j
< 150C, V
IN
= 10 V, T
A
= 85 C, SMD
1)
I
D(Nom)
2.4
-
-
A
Nominal load current
V
IN
= 10 V, V
DS
= 0.5 V, T
C
= 85 C, T
j
< 150C
I
D(ISO)
3.5
-
-
Current limit (active if V
DS
>2.5 V)
2)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 s
I
D(lim)
10
15
20
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 s.
2002-09-04
Page 4
BTS 3118 D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
-
40
100
s
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
-
70
100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
-
0.4
1.5
V/s
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
-
0.6
1.5
Protection Functions
1)
Thermal overload trip temperature
T
jt
150
175
-
C
Input current protection mode
I
IN(Prot)
60
120
300
A
Input current protection mode
T
j
= 150 C
I
IN(Prot)
-
100
300
Unclamped single pulse inductive energy
2)
I
D
= 2.2 A, T
j
= 25 C, V
bb
= 12 V
E
AS
2
-
-
J
Inverse Diode
Inverse diode forward voltage
I
F
= 10.9 A, t
m
= 250 s, V
IN
= 0 V,
t
P
= 300 s
V
SD
-
1.0
-
V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
2002-09-04
Page 5
BTS 3118 D
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN
D
VIN
ID
VDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
Input circuit (ESD protection)
IN
t
V
t
I
IN
t
I
D
t
T
j
Gate Drive
Source/
Ground
Input
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