PROFET BTS 432 D2
Infineon Technologies AG
Page 1 of 14
1999-03-22
Smart Highside Power Switch
Features
Load dump and reverse battery protection
1)
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
Electrostatic discharge (ESD) protection
Loss of ground and loss of V
bb
protection
2)
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-
restart and hysteresis
Application
C compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete
circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS
chip on chip technology. Fully protected by embedded protection
functions.
+ V bb
IN
ST
Signal GND
ESD
PROF
ET
OUT
GND
Logic
Voltag
e
sensor
Voltag
e
source
Open
load
detectio
n
Short
circuit
detectio
n
Charge
pump
Level
shifter
Temperatur
e sensor
Rectifie
r
Limit for
unclampe
dind.
loads
Gate
protectio
n
Curren
t limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltag
eprotectio
n
R bb
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Product Summary
V
Load dump
80
V
V
bb
-V
OUT
Avalanche Clamp
58
V
V
bb (operation)
4.5 ... 42
V
V
bb (reverse)
-32
V
R
ON
38
m
I
L(SCp)
44
A
I
L(SCr)
35
A
I
L(ISO)
11
A
1
5
Straight leads
1
5
SMD
5
Standard
BTS 432 D2
Infineon Technologies AG
Page 2
1999-Mar.-22
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
63
V
Load dump protection V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
= 2
, R
L
= 1.1
, t
d
= 200 ms, IN= low or high
V
s3
)
66.5
V
Load current (Short-circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC)
P
tot
125
W
Inductive load switch-off energy dissipation,
single pulse
T
j
=150 C: E
AS
1.7
J
Electrostatic discharge capability (ESD)
(Human Body Model)
V
ESD
2.0
kV
Input voltage (DC)
V
IN
-0.5 ... +6
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
I
IN
I
ST
5.0
5.0
mA
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
1
75
K/W
SMD version, device on pcb
4)
:
tbd
3)
V
S
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
4
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 432 D2
Infineon Technologies AG
Page 3
1999-Mar.-22
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A
T
j
=25 C:
T
j
=150 C:
R
ON
--
30
55
38
70
m
Nominal load current (pin 3 to 5)
ISO Proposal: V
ON
= 0.5 V, T
C
= 85 C
I
L(ISO)
9
11
--
A
Output current (pin
5
) while GND disconnected or
GND pulled up, V
IN
= 0, see diagram page 7,
T
j
=-40...+150C
I
L(GNDhigh)
--
--
1
mA
Turn-on time
to 90% V
OUT
:
Turn-off time
to 10% V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
50
10
160
--
300
80
s
Slew rate on
10 to 30% V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
dV /dt
on
0.4
--
2.5 V/
s
Slew rate off
70 to 40% V
OUT
, R
L
= 12
,
T
j
=-40...+150C
-dV/dt
off
1
--
5 V/
s
Operating Parameters
Operating voltage
5
)
T
j
=-40...+150C: V
bb(on)
4.5
--
42
V
Undervoltage shutdown
T
j
=-40...+150C: V
bb(under)
2.4
--
4.5
V
Undervoltage restart
T
j
=-40...+150C: V
bb(u rst)
--
--
4.5
V
Undervoltage restart of charge pump
see diagram page 12
T
j
=-40...+150C:
V
bb(ucp)
--
6.5
7.5
V
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
V
bb(under)
--
0.2
--
V
Overvoltage shutdown
T
j
=-40...+150C: V
bb(over)
42
--
52
V
Overvoltage restart
T
j
=-40...+150C: V
bb(o rst)
42
--
--
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
--
0.2
--
V
Overvoltage protection
6
)
T
j
=-40C:
I
bb
=40 mA
T
j
=25...+150C:
V
bb(AZ)
60
63
--
67
--
V
Standby current (pin 3)
T
j
=-40...+25C
:
V
IN
=0, I
ST
=0
,
T
j
=150C:
I
bb(off)
--
--
12
18
25
60
A
Leakage output current (included in I
bb(off)
)
V
IN
=0
I
L(off)
--
6
--
A
Operating current (Pin 1)
7)
, V
IN
=5 V
I
GND
--
1.1
--
mA
5
) At supply voltage increase up to V
bb
= 6.5 V typ without charge pump, V
OUT
V
bb
- 2 V
6)
see also V
ON(CL)
in table of protection functions and circuit diagram page 7. Meassured without load
.
BTS 432 D2
Infineon Technologies AG
Page 4
1999-Mar.-22
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
8
)
,
(
max 400
s if V
ON
> V
ON(SC)
)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
--
--
24
--
44
--
74
--
--
A
Repetitive short circuit current limit
I
L(SCr)
T
j
= T
jt
(see timing diagrams, page 10)
22
35
--
A
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
,
T
j
=-40..+150C:
min value valid only, if input "low" time exceeds 30
s
t
d(SC)
80
--
400
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL),
I
L
= 30 mA
V
ON(CL)
--
58
--
V
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
8.3
--
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Inductive load switch-off energy dissipation
9)
,
T
j Start
= 150 C, single pulse
V
bb
= 12 V:
V
bb
= 24 V:
E
AS
E
Load12
E
Load24
--
--
1.7
1.3
1.0
J
Reverse battery (pin 3 to 1)
10
)
-V
bb
--
--
32
V
Integrated resistor in V
bb
line
R
bb
--
120
--
Diagnostic Characteristics
Open load detection current
T
j
=-40 C
:
(on-condition)
T
j
=25..150C:
I
L (OL)
2
2
--
--
900
750
mA
7
) Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
8
) Short circuit current limit for max. duration of 400
s, prior to shutdown (see t
d(SC)
page 4)
9)
While demagnetizing load inductance, dissipated energy in PROFET is E
AS
=
V
ON(CL)
* i
L
(t) dt, approx.
E
AS
=
1
/
2
* L * I
2
L
* ( V
ON(CL)
V
ON(CL)
- V
bb
), see diagram page 8
10
) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current I
GND
of
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under these
condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional external
GND-resistor (150
). Input and Status currents have to be limited (see max. ratings page 2 and circuit page
7).
BTS 432 D2
Infineon Technologies AG
Page 5
1999-Mar.-22
Input and Status Feedback
11
)
Input turn-on threshold voltage
T
j
=-40..+150C:
V
IN(T+)
1.5
--
2.4
V
Input turn-off threshold voltage
T
j
=-40..+150C:
V
IN(T-)
1.0
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current (pin 2)
V
IN
= 0.4 V: I
IN(off)
1
--
30
A
On state input current (pin 2)
V
IN
= 3.5 V: I
IN(on)
10
25
50
A
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150C:
t
d(ST SC)
80
200
400
s
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
t
d(ST)
350
--
1600
s
Status output (CMOS)
T
j
=-40...+150C, I
ST
=
- 50
A:
T
j
=-40...+150C, I
ST
= +1.6 mA:
Max. status current for
current source
(out):
valid status output,
current sink
(in) :
T
j
=-40...+150C
V
ST(high)12
)
V
ST(low)
-I
ST
+I
ST13)
4.4
--
--
--
5.1
--
--
--
6.5
0.4
0.25
1.6
V
mA
11)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
12
) VSt high
V
bb
during undervoltage shutdown
13
) No current sink capability during undervoltage shutdown
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