BTS 441 R
Infineon Technologies AG
1
2003-Oct-01
Smart Highside Power Switch
One Channel: 20m
Status Feedback
Product Summary Package
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
Application
C compatible power switch for 5V, 12 V and 24 V DC applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Funktions
Very low standby current
Optimized static electromagnetic compatibility (EMC)
C and CMOS compatible
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Protection Functions
Short circuit protection
Current limitation
Overload protection
Thermal shutdown
Overvoltage protection (including load dump) with external
GND-resistor
Reverse battery protection with external GND-resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Diagnostic Function
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
TO-263-5-2 TO-220-5-12
SMD Straight
On-state Resistance
RON
20m
Operating Voltage
Vbb(on)
4.75 ... 41V
Nominal load current
IL(ISO) 21A
Current limitation
IL(lim)
65A
Vbb
Logic
with
protection
functions
IN
ST
GND
Load
PROFET
OUT
BTS 441 R
Infineon Technologies AG
2
2003-Oct-01
Functional diagram
Pin Definitions and Functions
Pin
Symbol
Function
1
GND
Logic ground
2 IN
Input, activates the power switch in
case of logical high signal
3 Vbb
Positive power supply voltage
The tab is shorted to pin 3
4 ST
Diagnostic feedback, low on failure
5 OUT
Output to the load
Tab Vbb
Positive power supply voltage
The tab is shorted to pin 3
Pin configuration
(top view)
Tab = V
BB
1 2 (3) 4 5
GND IN ST OUT
OUT
GND
overvoltage
protection
logic
internal
voltage supply
ESD
temperature
sensor
clamp for
inductive load
gate
control
+
charge
pump
current limit
Open load
detection
VBB
LOAD
IN
PROFET
ST
BTS 441 R
Infineon Technologies AG
3
2003-Oct-01
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
43
V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150C
V
bb
34
V
Load dump protection
1)
V
LoadDump
= V
A
+ V
s
, V
A
= 13.5 V
R
I
2)
= 2
, R
L
= 0,5
, t
d
= 200 ms, IN= low or high
V
Load dump
3)
60
V
Load current (Short-circuit current, see page 5)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC) ; TC
25C
P
tot
125
W
Maximal switchable inductance, single pulse
V
bb
=
12V, T
j,start
=
150C, T
C
=
150C const.
(see diagram, p.7) I
L(ISO)
=
21
A, RL= 0
: E
4)
AS
=0.7J:
Z
L
2.1
mH
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5k
; C=100pF
V
ESD
1.0
4.0
8.0
kV
Input voltage (DC)
V
IN
-10 ... +16
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
I
IN
I
ST
2.0
5.0
mA
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
1
75
K/W
SMD version, device on pcb
5)
:
33
1)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a 150
resistor in the GND connection. A resistor for the protection of the input is integrated.
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4)
E
AS
is the maximum inductive switch off energy
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 441 R
Infineon Technologies AG
4
2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at T
j
=-40...+150C, V
bb
= 12 V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance
(Vbb (pin3) to OUT (pin5)
);
I
L
= 2 A V
bb
7V:
T
j
=25 C:
T
j
=150 C:
see diagram page 9
R
ON
--
15
28
20
37
m
Nominal load current
(pin 3 to 5)
`ISO 10483-1, 6.7:V
ON
=0.5V, T
C
=85C
I
L(ISO)
17
21
--
A
Output current
(pin 5)
while GND disconnected or
GND pulled up
6)
, V
bb
=30 V, V
IN
= 0,
see diagram page 7
I
L(GNDhigh)
-- -- 2
mA
Turn-on time
IN
to 90% V
OUT
:
Turn-off time
IN
to 10% V
OUT
:
R
L
= 12
,
t
on
t
off
40
40
90
110
200
250
s
Slew rate on
10 to 30% V
OUT
,
R
L
= 12
,
dV /dt
on
0.1 -- 1
V/
s
Slew rate off
70 to 40% V
OUT
, R
L
= 12
,
-dV/dt
off
0.1 -- 1
V/
s
Operating Parameters
Operating voltage
T
j
=-40C
T
j
=+25C
T
j
=+105C
6)
T
j
=+150C
V
bb(on)
4.75
4.75
4.75
5.0
--
--
--
--
41
43
43
43
V
Overvoltage protection
7)
T
j
=-40C:
I
bb
=
40 mA
T
j
=+25...+150C:
V
bb(AZ)
41
43
--
47
--
52
V
Standby current (pin 3)
8)
T
j
=-40...+25C
:
T
j
=+105C
6)
:
V
IN
=0
see diagram page 9
T
j
=+150C:
I
bb(off)
--
--
--
5
--
--
10
10
25
A
Off-State output current (included in I
bb(off)
)
V
IN
=0
I
L(off)
-- 1.5 10
A
Operating current (Pin 1)
9)
, V
IN
=5 V,
I
GND
-- 2 4
mA
6)
not subject to production test, specified by design
7)
see also V
ON(CL)
in table of protection functions and circuit diagram page 7
8)
Measured with load, typ. 40 A when no load in off
9)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
BTS 441 R
Infineon Technologies AG
5
2003-Oct-01
Parameter and Conditions Symbol
Values
Unit
at T
j
=-40...+150C, V
bb
= 12 V unless otherwise specified
min typ
max
Protection Functions
10)
Current limit (pin 3 to 5)
T
j
=-40C: I
L(lim)
--
--
85
A
(see timing diagrams, page 9)
T
j
=25C:
T
j
=+150C:
--
40
65
--
--
--
Repetitive short circuit current limit
I
L(SCr)
--
55
--
A
T
j
= T
jt
(see timing diagrams, page 10)
Thermal shutdown time
11)12)
T
j,start
=25C:
(see timing diagram on page 10)
T
off(SC)
-- 14 --
ms
Output clamp
(inductive load switch off)
;
T
j
=-40C:
at VOUT = Vbb - VON(CL), IL= 40 mA
T
j
=25..150C:
V
ON(CL)
41
43
--
47
--
52
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Reverse battery (pin 3 to 1)
13)
-V
bb
--
--
32
V
Reverse battery voltage drop (V
OUT
> V
bb
)
I
L
= -2A
T
j
=+150C:
-V
ON(rev)
--
540 --
mV
10
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11)
not subject to production test, specified by design
12)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
13)
Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 1 and circuit page 7).
BTS 441 R
Infineon Technologies AG
6
2003-Oct-01
Parameter and Conditions Symbol
Values
Unit
at T
j
=-40...+150C, V
bb
= 12 V unless otherwise specified
min typ
max
Diagnostic Characteristics
Open load detection voltage
14)
V
OUT(OL)
1
2 3 4
V
Input and Status Feedback
15)
Input resistance
see circuit page 7
R
I
2.5
3.8 6.5
k
Input turn-on threshold voltage
V
IN(T+)
1.2 --
2.2
V
Input turn-off threshold voltage
V
IN(T-)
0.8 -- --
V
Input threshold hysteresis
V
IN(T)
-- 0.3 --
V
Off state input current (pin 2)
V
IN
= 0.4 V: I
IN(off)
1
--
15
A
On state input current (pin 2)
V
IN
= 5 V: I
IN(on)
4.5 12 24
A
Delay time for status with open load after switch
off
(see timing diagrams, page 11
),
t
ST delay
-- --
500
s
Status output (open drain)
Zener limit voltage
I
ST
= +1.6 mA:
ST low voltage
I
ST
= +1.6 mA::
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
V
Truth Table
IN
OUT
ST
Normal operation
L
H
L
H
H
H
Open load
L
H
Z
H
L
16)
H
Short circuit to Vbb L
H
H
H
L
H
Overtemperature
L
H
L
L
H
L
L = "Low" Level
Z = high impedance, potential depends on external circuit
H = "High" Level
Status signal valid after the time delay shown in the timing diagrams
14)
External pull up resistor required for open load detection in off state
15)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
16)
L, if potential at the Output exceeds the OpenLoad detection voltage
BTS 441 R
Infineon Technologies AG
7
2003-Oct-01
Terms
PROFET
IN
ST
OUT
GND
Vbb
VST
V IN
IIN
V
bb
IL
VOUT
IGND
VON
1
2
4
Leadframe, 3
5
Ibb
IST
RGND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD
I
I
I
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1
V typ., max 5.0 mA; R
ST(ON)
< 375
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may resul
t
in
a drift of
the zener voltage (increase of up to 1 V).
Inductive and overvoltage output clamp
+ Vbb
OUT
GND
PROFET
V
Z
V
ON
V
ON
clamped to 47 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
GND
GND
R
Signal GND
Logic
PROFET
VZ2
I
R
VZ1
Load GND
Load
R
OUT
ST
R
+ 5V
V
Z1
= 6.1 V typ., V
Z2
= 47 V typ., R
GND
= 150
,
R
ST
= 15 k
, R
I
= 3.5 k
typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Open-load detection
OFF-state diagnostic condition:
Open Load, if V
OUT
> 3 V typ.; IN low
Open load
detection
Logic
unit
VOUT
Signal GND
OFF
REXT
Vbb
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
V
bb
V
IN
V
ST
V
GND
Any kind of load. In case of Input=high is V
OUT
V
IN
- V
IN(T+)
.
BTS 441 R
Infineon Technologies AG
Page 8
2003-Oct-01
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
V
GND
V
IN
V
ST
Any kind of load. If V
GND >
V
IN
- V
IN(T+)
device stays off
Due to V
GND
>
0, no V
ST
= low signal available.
V
bb
disconnect with charged inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
high
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
RL
L
{
L
Z
Energy stored in load inductance:
E
L
=
1/2
L
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
=
I
L
L
2
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (IL );
Tj,start =
150C, Vbb =
12
V, RL =
0
L [mH]
1
10
100
1000
0
5
10
15
20
25
30
35
0.1
IL [A]
BTS 441 R
Infineon Technologies AG
Page 9
2003-Oct-01
Typ. on-state resistance
R
ON
= f (Vbb,Tj )
; I
L
=
2
A, IN
= high
R
ON
[m
]
40
35
30
25
20
15
10
5
3 5 7 9
30
40
Tj = 150C
25C
-40C
V
bb
[V]
Typ. standby current
I
bb(off)
= f (T
j
)
; V
bb
= 9...34 V, IN1,2
= low
I
bb(off)
[
A]
0
5
10
15
20
-50
0
50
100
150
200
T
j
[C]
BTS 441 R
Infineon Technologies AG
10
2003-Oct-01
Timing diagrams
Figure 1a: V
bb
turn on:
OUT
V
V bb
t
ST open drain
IN
proper turn on under all conditions
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
IN
t
V
OUT
I
L
t
t
on
off
90%
dV/dton
dV/dtoff
10%
Figure 2b: Switching a lamp,
IN
ST
OUT
L
t
V
I
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
other channel: normal operation
t
I
ST
IN
L
L(SCr)
I
I
L(lim)
toff(SC)
Heating up may require several milliseconds, depending on
external conditions
BTS 441 R
Infineon Technologies AG
11
2003-Oct-01
Figure 4a: Overtemperature:
Reset if T
j
<T
jt
IN
ST
OUT
J
t
V
T
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
OUT1
V
ST
IN1
I
L1
t
ST delay
t
off
t
ST delay
. = 500s
Open load detection requires an external pull up
resistor between OUT and VBB
BTS 441 R
Infineon Technologies AG
12
2003-Oct-01
Package and Ordering Code
All dimensions in mm
SMD: P-TO263-5-2
(tape&reel)
Sales code
BTS441R G
Ordering code:
Q67060-S6118
Straight: P-TO220-5-12
Sales code
BTS441R S
Ordering code:
Q67060-S6119
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
A
8 max.
B
A
0.25
M
0.1
Typical
9.8
0.15
0.2
10
8.5
1)
8
1)
(15)
0.2
9.25
0.3
1
0...0.15
5x0.8
0.1
0.1
1.27
4.4
B
0.5
0.1
0.3
2.7
4.7
0.5
0.05
1)
0.1
All metal surfaces tin plated, except area of cut.
0.3
1.3
2.4
4x1.7
A
B
A
0.25
M
Typical
9.8
0.15
2.8
1)
15.65
0.3
13.4
0...0.15
1.7
0.8
0.1
0.1
1.27
4.4
B
9.25
0.2
0.05
1)
All metal surfaces tin plated, except area of cut.
C
0.2
17
0.3
8.5
1)
10
0.2
3.7
-0.15
C
2.4
0.5
0.1
13
0.5
0.5
11
6x
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