CFY25
Semiconductor Group
1 of 8
Draft D, Sep. 0000
HiRel X-Band GaAs Low Noise / General Purpose MESFET
HiRel Discrete and Microwave
Semiconductor
For professional pre- and driver-amplifiers
For frequencies from 500 MHz to 20 GHz
Hermetically sealed microwave package
Low noise figure, high gain, moderate power
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 01 to 05
1
2
3
4
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
Package
1
2
3
4
CFY25-P (ql)
CFY25-23 (ql)
CFY25-23P (ql)
CFY25-20 (ql)
CFY25-20P (ql)
-
see below
G
S
D
S
Micro-X
CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
Q62703F120
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
Q62703F119
(see order instructions for ordering example)
CFY25
Semiconductor Group
2 of 8
Draft D, Sep. 0000
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
5
V
Drain-gate voltage
V
DG
7
V
Gate-source voltage (reverse / forward)
V
GS
- 5... + 0.5
V
Drain current
I
D
80
mA
Gate forward current
I
G
1.5
mA
RF Input Power, C- and X-Band
1)
P
RF,in
+ 17
dBm
Junction temperature
T
J
175
C
Storage temperature range
T
stg
- 65... + 175
C
Total power dissipation
2)
P
tot
250
mW
Soldering temperature
3)
T
sol
230
C
Thermal Resistance
Junction-soldering point
R
th JS
410
K/W
Notes.:
1) For V
DS
3 V. For V
DS
> 3 V, derating is required.
2) At T
S
= + 72.5 C. For T
S
> + 72.5 C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
CFY25
Semiconductor Group
3 of 8
Draft D, Sep. 0000
Electrical Characteristics
(at T
A
=25C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 3 V, V
GS
= 0 V
I
Dss
15
30
60
mA
Gate threshold voltage
V
DS
= 3 V, I
D
= 1 mA
-V
Gth
0.3
1.0
3.0
V
Drain current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
I
Dp
-
< 100
-
A
Gate leakage current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
-I
Gp
-
< 100
200
A
Transconductance
V
DS
= 3 V, I
D
= 15 mA
g
m15
35
40
-
mS
Gate leakage current at operation
V
DS
= 3 V, I
D
= 15 mA
-I
G15
-
< 1
2
A
Thermal resistance
junction to soldering point
R
th JS
-
370
-
K/W
CFY25
Semiconductor Group
4 of 8
Draft D, Sep. 0000
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure
1)
V
DS
= 3 V, I
D
= 15 mA, f = 12 GHz
NF
dB
CFY25-P
-
< 2.3
-
CFY25-20, -20P
-
1.9
2.1
CFY25-23, -23P
-
2.2
2.4
Associated gain.
1)
V
DS
= 3 V, I
D
= 15 mA, f = 12 GHz
G
a
dB
CFY25-P
-
> 8.5
-
CFY25-20, -20P
8.5
9
-
CFY25-23, -23P
8.0
8.7
-
Output power at 1 dB gain compression
2)
V
DS
= 3 V, I
D(RF off)
= 20 mA, f = 12 GHz
P
1dB
dBm
CFY25-20, -23
-
15
-
CFY25-20P, 23P, -P
14
15
-
Linear power gain
2)
V
DS
= 3 V, I
D
= 20 mA, f = 12 GHz,
P
in
= 0 dBm
G
lp
dB
CFY25-20
-
9.2
-
CFY25-23
-
8.5
-
CFY25-20P, -P
8.5
9.2
-
CFY25-23P
8.0
8.5
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power / linear power gain characteristics given for optimum output power matching
conditions (fixed generic matching, no fine-tuning).
CFY25
Semiconductor Group
5 of 8
Draft D, Sep. 0000
Typical Common Source S-Parameters CFY25-20
V
D S
= 3 V, I
D
= 15 mA, Z
o
= 50 ?
f
|S11|
<S11
|S21|
<S21
|S12|
<S12
|S22|
<S22 k-Fact. S
21
/S
12
MAG
[GHz] [magn
]
[angle
]
[magn
]
[angle
]
[magn
]
[angle
]
[magn
]
[angle
]
[magn] [dB]
[dB]
0,5
0,958
-22
3,301
160
0,0170
71
0,683
-14
0,44
22,9
1,0
0,931
-28
3,208
155
0,0287
64
0,673
-18
0,50
20,5
1,5
0,901
-36
3,107
148
0,0398
59
0,660
-23
0,54
18,9
2,0
0,875
-45
3,016
139
0,0502
53
0,648
-29
0,56
17,8
2,5
0,858
-56
2,950
130
0,0602
47
0,635
-35
0,55
16,9
3,0
0,838
-67
2,877
120
0,0691
42
0,621
-41
0,56
16,2
3,5
0,815
-78
2,795
111
0,0767
36
0,603
-48
0,58
15,6
4,0
0,794
-88
2,708
102
0,0834
31
0,590
-54
0,61
15,1
4,5
0,776
-98
2,621
93
0,0893
25
0,573
-60
0,64
14,7
5,0
0,760
-108
2,537
84
0,0939
20
0,562
-67
0,66
14,3
5,5
0,746
-117
2,451
76
0,0975
15
0,549
-73
0,69
14,0
6,0
0,732
-126
2,365
68
0,1000
10
0,539
-80
0,72
13,7
6,5
0,718
-135
2,281
60
0,1017
5
0,529
-86
0,77
13,5
7,0
0,703
-143
2,202
52
0,1035
1
0,521
-91
0,81
13,3
7,5
0,689
-150
2,133
45
0,1049
-3
0,511
-96
0,87
13,1
8,0
0,674
-158
2,072
38
0,1056
-6
0,504
-101
0,92
12,9
8,5
0,661
-166
2,020
30
0,1063
-10
0,495
-106
0,97
12,8
9,0
0,650
-174
1,976
23
0,1068
-13
0,484
-111
1,02
12,7
11,7
9,5
0,640
178
1,933
16
0,1076
-16
0,474
-116
1,06
12,5
11,0
10,0
0,629
170
1,896
9
0,1080
-20
0,463
-121
1,11
12,4
10,4
10,5
0,620
162
1,859
2
0,1084
-23
0,452
-127
1,16
12,3
9,9
11,0
0,613
153
1,826
-5
0,1090
-26
0,443
-133
1,19
12,2
9,6
11,5
0,607
145
1,797
-13
0,1097
-29
0,436
-140
1,22
12,1
9,3
12,0
0,600
137
1,767
-20
0,1105
-33
0,431
-147
1,24
12,0
9,1
12,5
0,593
130
1,738
-27
0,1114
-36
0,426
-153
1,27
11,9
8,8
13,0
0,587
122
1,708
-34
0,1125
-40
0,421
-159
1,30
11,8
8,5
13,5
0,580
114
1,678
-41
0,1138
-43
0,419
-166
1,32
11,7
8,3
14,0
0,575
106
1,651
-49
0,1149
-47
0,417
-172
1,34
11,6
8,1
14,5
0,572
98
1,627
-56
0,1161
-51
0,413
-178
1,36
11,5
7,9
15,0
0,568
90
1,607
-63
0,1180
-55
0,410
176
1,37
11,3
7,7
15,5
0,565
82
1,589
-70
0,1198
-59
0,408
170
1,37
11,2
7,6
16,0
0,565
73
1,570
-78
0,1219
-64
0,404
164
1,37
11,1
7,5
16,5
0,564
65
1,552
-86
0,1242
-69
0,402
157
1,36
11,0
7,4
17,0
0,564
57
1,548
-92
0,1266
-74
0,398
152
1,35
10,9
7,4
17,5
0,564
51
1,554
-98
0,1292
-78
0,396
147
1,32
10,8
7,4
18,0
0,567
47
1,562
-102 0,1319
-81
0,394
143
1,28
10,7
7,6
CFY25
Semiconductor Group
6 of 8
Draft D, Sep. 0000
Typical Common Source S-Parameters
CFY25-20 (continued)
V
D S
= 3 V, I
D
= 30 mA, Z
o
= 50 ?
f
|S11|
<S11
|S21|
<S21
|S12|
<S12
|S22|
<S22 k-Fact. S
21
/S
12
MAG
[GHz] [mag]
[ang]
[mag]
[ang]
[mag]
[ang]
[mag]
[ang]
[mag]
[dB]
[dB]
0,5
0,953
-24
3,987
159
0,0140
74
0,657
-15
0,49
24,5
1,0
0,921
-30
3,858
153
0,0246
67
0,647
-18
0,53
22,0
1,5
0,892
-39
3,714
146
0,0346
60
0,634
-23
0,56
20,3
2,0
0,861
-49
3,583
138
0,0444
55
0,621
-28
0,59
19,1
2,5
0,836
-60
3,484
128
0,0543
49
0,608
-35
0,58
18,1
3,0
0,814
-72
3,374
118
0,0621
43
0,594
-41
0,60
17,4
3,5
0,790
-83
3,254
108
0,0684
38
0,576
-47
0,63
16,8
4,0
0,768
-94
3,129
99
0,0736
32
0,557
-53
0,67
16,3
4,5
0,749
-104
3,007
90
0,0779
27
0,541
-59
0,70
15,9
5,0
0,731
-114
2,890
82
0,0810
22
0,527
-65
0,74
15,5
5,5
0,714
-124
2,776
73
0,0844
18
0,515
-72
0,78
15,2
6,0
0,699
-133
2,662
65
0,0863
14
0,505
-78
0,83
14,9
6,5
0,683
-141
2,556
57
0,0880
10
0,498
-84
0,88
14,6
7,0
0,669
-149
2,458
50
0,0893
6
0,492
-89
0,93
14,4
7,5
0,657
-157
2,374
42
0,0904
3
0,486
-94
0,98
14,2
8,0
0,645
-165
2,299
35
0,0918
0
0,480
-99
1,02
14,0
13,1
8,5
0,632
-173
2,233
28
0,0933
-2
0,474
-103
1,07
13,8
12,2
9,0
0,620
179
2,174
21
0,0945
-5
0,467
-108
1,11
13,6
11,6
9,5
0,609
171
2,120
14
0,0960
-8
0,459
-112
1,15
13,4
11,1
10,0
0,600
163
2,071
7
0,0976
-10
0,453
-118
1,18
13,3
10,7
10,5
0,592
154
2,026
0
0,0990
-13
0,446
-123
1,21
13,1
10,4
11,0
0,586
146
1,984
-7
0,1006
-16
0,441
-129
1,23
12,9
10,1
11,5
0,579
138
1,947
-14
0,1026
-19
0,436
-136
1,24
12,8
9,8
12,0
0,574
130
1,910
-21
0,1047
-22
0,432
-142
1,25
12,6
9,6
12,5
0,571
123
1,876
-29
0,1066
-25
0,428
-149
1,26
12,5
9,4
13,0
0,566
115
1,842
-36
0,1088
-28
0,425
-155
1,27
12,3
9,2
13,5
0,563
107
1,806
-43
0,1108
-32
0,424
-161
1,28
12,1
9,0
14,0
0,561
99
1,774
-50
0,1140
-35
0,422
-167
1,27
11,9
8,8
14,5
0,559
91
1,745
-57
0,1170
-39
0,421
-173
1,26
11,7
8,7
15,0
0,556
83
1,719
-64
0,1199
-43
0,419
-179
1,26
11,6
8,5
15,5
0,556
75
1,698
-72
0,1229
-48
0,417
175
1,24
11,4
8,4
16,0
0,556
66
1,676
-79
0,1257
-53
0,414
168
1,23
11,2
8,3
16,5
0,557
58
1,653
-87
0,1286
-58
0,412
162
1,23
11,1
8,2
17,0
0,559
50
1,646
-93
0,1320
-63
0,410
157
1,20
11,0
8,3
17,5
0,561
45
1,649
-99
0,1350
-67
0,409
152
1,16
10,9
8,4
18,0
0,565
40
1,656
-103 0,1376
-71
0,407
148
1,13
10,8
8,6
CFY25
Semiconductor Group
7 of 8
Draft D, Sep. 0000
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY25- (nnl) (ql)
(nnl):
Noise/Gain/Power Level
(ql):
Quality Level
Ordering Example:
Ordering Code: Q62703F119
CFY25-20P
For CFY25, Noise/Gain/Power Level 20P:
NF < 2.1dB, G
a
> 8.5 dB, P
1dB
> 14 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
- HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.:
++89 6362 4480
Fax.:
++89 6362 5568
e-mail:
martin.wimmers@siemens-scg.com
Address:
Siemens Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
CFY25
Semiconductor Group
8 of 8
Draft D, Sep. 0000
Micro-X Package
Published by Siemens Semiconductors, High
Frequency Products Marketing, P.O.Box 801709, D-
81617 Munich.
Siemens AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and
shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany
or the Siemens Companies and Representatives
woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens Semiconductors is a certified CECC and QS9000
manufacturer (this includes ISO 9000).
PDF 
ZIP