CFY67
Semiconductor Group
1 of 10
Draft D, September 99
HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor
Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figure, high associated gain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
1
2
3
4
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
Package
1
2
3
4
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
-
see below
G
S
D
S
Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
Q62702F1699
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
Q62702F1699
(see order instructions for ordering example)
CFY67
Semiconductor Group
2 of 10
Draft D, September 99
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
3.5
V
Drain-gate voltage
V
DG
4.5
V
Gate-source voltage (reverse / forward)
V
GS
- 3... + 0.5
V
Drain current
I
D
60
mA
Gate forward current
I
G
2
mA
RF Input Power, C- and X-Band
1)
P
RF,in
+ 10
dBm
Junction temperature
T
J
150
C
Storage temperature range
T
stg
- 65... + 150
C
Total power dissipation
2)
P
tot
200
mW
Soldering temperature
3)
T
sol
230
C
Thermal Resistance
Junction-soldering point
R
th JS
515 (tbc.)
K/W
Notes.:
1) For V
DS
2 V. For V
DS
> 2 V, derating is required.
2) At T
S
= + 47 C. For T
S
> + 47 C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
CFY67
Semiconductor Group
3 of 10
Draft D, September 99
Electrical Characteristics
(at T
A
=25C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
I
Dss
15
30
60
mA
Gate threshold voltage
V
DS
= 2 V, I
D
= 1 mA
-V
Gth
0.2
0.7
2.0
V
Drain current at pinch-off
V
DS
= 1.5 V, V
GS
= - 3 V
I
Dp
-
< 50
-
A
Gate leakage current at pinch-off
V
DS
= 1.5 V, V
GS
= - 3 V
-I
Gp
-
< 50
200
A
Transconductance
V
DS
= 2 V, I
D
= 15 mA
g
m15
50
65
-
mS
Gate leakage current at operation
V
DS
= 2 V, I
D
= 15 mA
-I
G15
-
< 0.5
2
A
Thermal resistance
junction to soldering point
R
th JS
-
450
-
K/W
CFY67
Semiconductor Group
4 of 10
Draft D, September 99
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure
1)
V
DS
= 2 V, I
D
= 15 mA, f = 12 GHz
NF
dB
CFY67-06
-
0.5
0.6
CFY67-08, -08P
-
0.7
0.8
CFY67-10, 10P
-
0.9
1.0
Associated gain.
1)
V
DS
= 2 V, I
D
= 15 mA, f = 12 GHz
G
a
dB
CFY67-06
11.5
12.5
-
CFY67-08, -08P
11.0
11.5
-
CFY67-10, 10P
10.5
11.0
-
Output power at 1 dB gain compression
2)
V
DS
= 2 V, I
D
= 20 mA, f = 12 GHz
P
1dB
dBm
CFY67-06, -08, -10
-
11.0
-
CFY67-08P, -10P
10.0
11.0
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
CFY67
Semiconductor Group
5 of 10
Draft D, September 99
Typical Common Source S-Parameters
CFY67-08: V
DS
= 2 V, I
D
= 15 mA, Z
o
= 50
f
|S11|
<S11
|S21|
<S21
|S12|
<S12
|S22|
<S22 k-Fact. S
21
/S
12
MAG
[GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn]
[dB]
[dB]
0,5
0,963
-15
5,315
165
0,0111
74
0,655
-14
0,40
26,8
1,0
0,938
-23
5,182
159
0,0225
68
0,639
-18
0,39
23,6
1,5
0,913
-33
5,060
150
0,0317
62
0,625
-23
0,42
22,0
2,0
0,889
-42
4,940
142
0,0411
57
0,611
-28
0,43
20,8
2,5
0,865
-52
4,824
133
0,0509
53
0,596
-35
0,43
19,8
3,0
0,844
-62
4,715
124
0,0585
46
0,582
-41
0,45
19,1
3,5
0,823
-72
4,591
115
0,0650
41
0,567
-47
0,47
18,5
4,0
0,800
-81
4,450
107
0,0714
36
0,552
-53
0,50
17,9
4,5
0,779
-91
4,319
99
0,0768
31
0,534
-60
0,52
17,5
5,0
0,761
-100
4,183
91
0,0811
25
0,520
-66
0,54
17,1
5,5
0,743
-109
4,043
83
0,0850
20
0,500
-72
0,58
16,8
6,0
0,725
-117
3,906
75
0,0885
15
0,490
-77
0,60
16,4
6,5
0,708
-125
3,769
68
0,0917
11
0,477
-83
0,63
16,1
7,0
0,690
-132
3,640
61
0,0942
7
0,467
-88
0,67
15,9
7,5
0,673
-139
3,529
54
0,0962
3
0,455
-93
0,71
15,6
8,0
0,656
-146
3,427
48
0,0978
-1
0,442
-97
0,76
15,4
8,5
0,640
-153
3,344
41
0,0998
-5
0,430
-101
0,79
15,3
9,0
0,625
-160
3,271
34
0,1010
-9
0,417
-104
0,84
15,1
9,5
0,611
-168
3,202
28
0,1027
-12
0,406
-108
0,87
14,9
10,0
0,597
-175
3,143
21
0,1033
-16
0,393
-113
0,91
14,8
10,5
0,586
177
3,089
15
0,1044
-20
0,381
-118
0,94
14,7
11,0
0,576
169
3,041
8
0,1056
-24
0,370
-123
0,96
14,6
11,5
0,564
161
3,002
1
0,1068
-28
0,358
-129
0,98
14,5
12,0
0,554
154
2,960
-5
0,1070
-32
0,351
-134
1,01
14,4
13,8
12,5
0,547
146
2,923
-12
0,1076
-36
0,343
-140
1,03
14,3
13,3
13,0
0,536
139
2,886
-19
0,1076
-41
0,336
-146
1,06
14,3
12,7
13,5
0,529
131
2,848
-26
0,1081
-45
0,330
-151
1,09
14,2
12,4
14,0
0,522
124
2,815
-33
0,1087
-50
0,325
-156
1,11
14,1
12,1
14,5
0,517
116
2,787
-40
0,1087
-55
0,320
-161
1,13
14,1
11,9
15,0
0,510
108
2,765
-46
0,1093
-60
0,315
-167
1,14
14,0
11,7
15,5
0,505
99
2,751
-54
0,1090
-65
0,311
-172
1,16
14,0
11,6
16,0
0,502
91
2,735
-61
0,1090
-71
0,305
-177
1,18
14,0
11,4
16,5
0,499
82
2,719
-68
0,1091
-77
0,301
177
1,19
14,0
11,3
17,0
0,498
74
2,722
-75
0,1097
-82
0,297
172
1,19
13,9
11,3
17,5
0,498
68
2,741
-80
0,1103
-87
0,294
168
1,18
14,0
11,4
18,0
0,498
62
2,760
-84
0,1107
-90
0,290
165
1,17
14,0
11,5
CFY67
Semiconductor Group
6 of 10
Draft D, September 99
Typical Common Source S-Parameters
(continued)
CFY67-06: V
DS
= 2 V, I
D
= 15 mA, Z
o
= 50
f
|S11|
<S11
|S21|
<S21
|S12|
<S12
|S22|
<S22 k-Fact. S
21
/S
12
MAG
[GHz] [mag]
[ang]
[mag]
[ang]
[mag]
[ang]
[mag]
[ang]
[mag]
[dB]
[dB]
0,5
0,962
-13
6,112
166
0,0111
76
0,539
-15
0,42
27,4
1,0
0,937
-22
5,956
159
0,0211
69
0,525
-19
0,42
24,5
1,5
0,913
-33
5,810
150
0,0302
64
0,511
-24
0,44
22,8
2,0
0,889
-41
5,690
142
0,0394
58
0,498
-30
0,46
21,6
2,5
0,860
-51
5,522
133
0,0484
53
0,484
-36
0,48
20,6
3,0
0,834
-61
5,386
124
0,0567
48
0,469
-43
0,50
19,8
3,5
0,810
-71
5,236
116
0,0637
43
0,456
-49
0,52
19,1
4,0
0,784
-80
5,067
107
0,0702
38
0,440
-55
0,55
18,6
4,5
0,761
-90
4,911
99
0,0760
33
0,423
-61
0,58
18,1
5,0
0,740
-99
4,752
91
0,0809
28
0,410
-67
0,60
17,7
5,5
0,720
-107
4,586
84
0,0851
24
0,397
-73
0,63
17,3
6,0
0,701
-116
4,420
76
0,0889
19
0,385
-79
0,66
17,0
6,5
0,682
-124
4,260
69
0,0918
15
0,373
-84
0,69
16,7
7,0
0,663
-131
4,107
62
0,0941
11
0,362
-89
0,73
16,4
7,5
0,644
-139
3,974
55
0,0962
7
0,351
-93
0,77
16,2
8,0
0,627
-148
3,852
49
0,0980
3
0,343
-98
0,80
15,9
8,5
0,611
-157
3,747
42
0,0995
-1
0,333
-102
0,83
15,8
9,0
0,595
-165
3,659
35
0,1008
-5
0,323
-107
0,86
15,6
9,5
0,581
-173
3,571
29
0,1022
-9
0,313
-112
0,90
15,4
10,0
0,567
178
3,497
22
0,1039
-13
0,303
-116
0,92
15,3
10,5
0,556
170
3,430
16
0,1049
-17
0,293
-121
0,95
15,1
11,0
0,546
163
3,368
9
0,1064
-21
0,284
-127
0,98
15,0
11,5
0,537
155
3,317
3
0,1078
-26
0,274
-131
1,00
14,9
12,0
0,528
149
3,265
-4
0,1093
-30
0,265
-135
1,02
14,8
13,8
12,5
0,520
142
3,216
-10
0,1105
-35
0,255
-139
1,05
14,6
13,3
13,0
0,513
135
3,169
-17
0,1116
-39
0,246
-143
1,07
14,5
12,9
13,5
0,506
128
3,120
-24
0,1126
-44
0,235
-146
1,10
14,4
12,5
14,0
0,498
121
3,080
-30
0,1137
-49
0,225
-150
1,12
14,3
12,2
14,5
0,492
113
3,044
-37
0,1151
-54
0,215
-155
1,14
14,2
12,0
15,0
0,489
106
3,014
-44
0,1160
-59
0,207
-159
1,15
14,1
11,8
15,5
0,484
98
2,990
-51
0,1171
-65
0,200
-163
1,16
14,1
11,6
16,0
0,485
91
2,967
-58
0,1185
-71
0,193
-167
1,17
14,0
11,5
16,5
0,485
83
2,945
-65
0,1197
-77
0,187
-171
1,17
13,9
11,4
17,0
0,485
75
2,947
-71
0,1206
-82
0,182
-175
1,17
13,9
11,4
17,5
0,487
69
2,961
-77
0,1215
-87
0,177
-178
1,16
13,9
11,5
18,0
0,490
64
2,979
-81
0,1230
-90
0,174
179
1,14
13,8
11,6
CFY67
Semiconductor Group
7 of 10
Draft D, September 99
Typical Common Source Noise-Parameters
CFY67-08: V
DS
= 2 V, I
D
= 15 mA, Z
o
= 50
f
NF
min
|
opt
|
<
opt
R
n
[GHz]
[dB]
[magn]
[angle]
[
]
1
0,29
0,756
14
15,60
2
0,30
0,690
28
14,65
3
0,34
0,643
43
13,56
4
0,38
0,606
58
12,10
5
0,41
0,578
73
10,53
6
0,46
0,553
87
8,86
7
0,50
0,534
102
7,16
8
0,55
0,518
116
5,62
9
0,60
0,505
131
4,29
10
0,64
0,495
145
3,23
11
0,69
0,486
159
2,53
12
0,73
0,476
173
2,22
13
0,78
0,467
-173
2,37
14
0,84
0,455
-160
2,96
15
0,88
0,443
-146
4,01
16
0,93
0,428
-132
5,47
17
0,99
0,412
-118
7,26
18
1,05
0,394
-103
9,61
CFY67
Semiconductor Group
8 of 10
Draft D, September 99
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY67 -(nnl) (ql)
-(nnl)
Noise Figure/Gain and/or Power Level
(ql):
Quality Level
Ordering Example:
Ordering Code: Q62702F1698
CFY67-08P ES
For CFY67, Noise Figure/Gain/Power Level 08P:
NF < 0.8 dB, G
a
> 11.0 dB, P
1dB
> 10 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
++89 234 24480
Fax.:
++89 234 28438
e-mail: martin.wimmers@infineon.com
Address:
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
CFY67
Semiconductor Group
9 of 10
Draft D, September 99
Micro-X Package
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the Infineon Technologies Companies and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
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