2003-07-31
Rev.2
Page 1
IDP30E60
IDB30E60
Fast Switching EmCon Diode
Product Summary
V
RRM
600
V
I
F
30
A
V
F
1.5
V
T
jmax
175
C
Feature
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175C operating temperature
Easy paralleling
P-TO220-3.SMD
P-TO220-2-2.
Pin 1
PIN 2
PIN 3
C
A
-
NC
C
A
Marking
D30E60
D30E60
Type
Package
Ordering Code
IDP30E60
P-TO220-2-2.
Q67040-S4488
IDB30E60
P-TO220-3.SMD Q67040-S4376
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Continous forward current
T
C
=25C
T
C
=90C
I
F
52.3
34.9
A
Surge non repetitive forward current
T
C
=25C, t
p
=10 ms, sine halfwave
I
FSM
117
Maximum repetitive forward current
T
C
=25C, t
p
limited by T
jmax
, D=0.5
I
FRM
81
Power dissipation
T
C
=25C
T
C
=90C
P
tot
142.9
80.9
W
Operating and storage temperature
T
j ,
T
stg
-55...+175
C
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
S
255
C
2003-07-31
Rev.2
Page 2
IDP30E60
IDB30E60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.05
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=600V, T
j
=25C
V
R
=600V, T
j
=150C
I
R
-
-
-
-
50
2500
A
Forward voltage drop
I
F
=30A, T
j
=25C
I
F
=30A, T
j
=150C
V
F
-
-
1.5
1.5
2
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2003-07-31
Rev.2
Page 3
IDP30E60
IDB30E60
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Reverse recovery time
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=150C
t
rr
-
-
-
126
171
178
-
-
-
ns
Peak reverse current
V
R
=400V, I
F
= 30A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=150C
I
rrm
-
-
-
19
22
24
-
-
-
A
Reverse recovery charge
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=150C
Q
rr
-
-
-
1100
1950
2150
-
-
-
nC
Reverse recovery softness factor
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=30A, di
F
/dt=1000A/s, T
j
=150C
S
-
-
-
4
4.6
4.8
-
-
-
2003-07-31
Rev.2
Page 4
IDP30E60
IDB30E60
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
175C
25
50
75
100
125
C
175
T
C
0
5
10
15
20
25
30
35
40
45
A
55
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: Tj 175 C
25
50
75
100
125
C
175
T
C
0
10
20
30
40
50
60
70
80
90
100
110
120
W
150
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0
0.5
1
1.5
V
2.5
V
F
0
10
20
30
40
50
60
70
A
90
I
F
-55C
25C
100C
150C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60
-20
20
60
100
C
160
T
j
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
2
V
F
15A
30A
60A
2003-07-31
Rev.2
Page 5
IDP30E60
IDB30E60
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
100
150
200
250
300
350
400
ns
500
t
rr
60A
30A
15A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125 C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
1000
1200
1400
1600
1800
2000
2200
nC
2600
Q
rr
15A
30A
60A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
6
8
10
12
14
16
18
20
22
A
26
I
rr
60A
30A
15A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
3
4
5
6
7
8
9
10
12
S
60A
30A
15A
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