FOA21002A2
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N e v e r s t o p t h i n k i n g .
Features
s
Nominal data rate up to
10.7 Gbit/s
s
Suitable for driving electro-
absorption modulators (EAM)
s
Suitable for direct modula-
tion of 50 or 25
matched
laser diodes
s
Adjustable output current
swing up to 60 mA
(3 V across 50
)
s
Pulse shape adjustment:
duty cycle, output voltage
undershoot
s
Fully differential design
s
Low power consumption
Typical Applications
s
Fiber optics telecom and
datacom applications
s
SONET/SDH OC-192/STM-64
with and without FEC
s
Driver for EAM, laser diode
modules, transmission lines
s
Test and Measurement
equipment:
Clock driver, buffer
Main Advantages
s
Data rate up to 10.7 Gbit/s
s
Industry's lowest power
consumption of typical 1.5 W
(for full voltage swing of 3 V)
s
Suitable for driving both
50
matched Electro-
Absorption Modulators
(EAM) as well as direct modu-
lation of 50 or 25
matched
laser diodes. (for single or dif-
ferential transmission lines)
s
Adjustable output current
swing up to 60 mA
(3 V across 50
)
s
Pulse shape adjustment:
Eye symmetry, duty cycle,
output voltage undershoot
s
Fully differential design
s
Supply voltage of -5.2 V
and +1.8 V
s
Small chip size of
1.415 x 1.045 mm (bare die)
F O A 2 1 0 0 2 A 2
F O A 2 1 0 0 2 A 1 L a s e r D i o d e D r i v e r
L D D 9 . 9 5 - 1 0 . 7 G b i t / s , - 5 . 2 V
S e m i c o n d u c t o r S o l u t i o n s f o r
H i g h S p e e d C o m m u n i c a t i o n
a n d F i b e r O p t i c A p p l i c a t i o n s
The FOA21002A2 is the industry's first STM64/OC-192
Laser Diode Driver for SDH/SONET systems in Silicon Ger-
manium technology. This new device is a key component
for leading-edge high speed optical communication sys-
tems for regional, metropolitan and backbone transport
data networks at the highest speeds of up to 10.7 Gbit/s
over one single fiber. It is a member of the complete
10 Gbit/s chipset in the Silicon Germanium technology
with the industry's lowest power consumption.
Packing
Type
Sales Code
Package
LDD
FOA21002A
Bare die
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Published by Infineon Technologies AG
How to reach us:
http://www.infineon.com
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
81541 Mnchen
Infineon Technologies AG 2002. All Rights Reserved.
Attention please!
The information herein is given to describe certain compo-
nents and shall not be considered as warranted character-
istics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but
not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our
Infineon Technologies Representatives worldwide.
Warnings
Due to technical requirements components may contain dan-
gerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in
life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such com-
ponents can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume
that the health of the user or other persons may be
endangered.
FOA21002A2
Block Diagram
F O A 2 1 0 0 2 A 2
50
50
IH
IL
IOS1H
IOS1L
V
CC
IOS2H IOS2L
ISS1 EF23 EF12 EF22
V
EE
60
60
V
CCQL
V
CCQH
QH
QL
IMOD
Ordering No. B168-H7713-G1-X-7600
Printed in Germany
PS 1201.5
NB
QL
QH
50
45
50
Laser
Module
IH
IL
IOS1H
IOS1L
DataIN+
DataIN-
Open
Open
40
L*
L*
V
CC
IMOD
V
CCQH
V
CCQL
-5.2 V
V
EE
600
160
Open
Open
ISS1
EF23
EF12
EF22
+1.8 V
F O A 2 1 0 0 2 A 2
Application Example
10 Gbit/s
Chipset Overview
TIA
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