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Электронный компонент: H11A3

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2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
253
March 27, 2000-00
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 V
RMS
Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)
on the phototransistor substrate. These isolation pro-
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
3
9
.300.347
(7.628.81)
4
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Dimensions in Inches (mm)
DEVICE TYPES
Part No.
CTR % Min.
Part No.
CTR % Min.
4N25
20
MCT2
20
4N26
20
MCT2E
20
4N27
10
MCT270
50
4N28
10
MCT271
4590
4N35
100
MCT272
75150
4N36
100
MCT273
125250
4N37
100
MCT274
225400
4N38
10
MCT275
7090
H11A1
50
MCT276
1560
H11A2
20
MCT277
100
H11A3
20
H11A4
10
H11A5
30
FEATURES
Interfaces with Common Logic Families
Input-output Coupling Capacitance < 0.5 pF
Industry Standard Dual-in-line 6-pin Package
Field Effect Stable by TRIOS
5300 V
RMS
Isolation Test Voltage
Underwriters Laboratory File #E52744
VDE #0884 Approval Available with Option 1
APPLICATIONS
AC Mains Detection
Reed Relay Driving
Switch Mode Power Supply Feedback
Telephone Ring Detection
Logic Ground Isolation
Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
V
D E
PHOTOTRANSISTOR
Industry Sta ndard
Single Channel
6 Pin DIP Optocoupler
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
Phototransistor, Industry Standard
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
254
March 27, 2000-00
Maximum Ratings
T
A
=25
C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t
10
s)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 V
RMS
Creepage ..............................................................................................
7.0 mm
Clearance .............................................................................................
7.0 mm
Isolation Thickness between Emitter and Detector ...............................
0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
C...............................................................................10
12
V
IO
=500 V,
T
A
=100
C............................................................................ 10
11
Storage Temperature................................................................ 55
C to +150
C
Operating Temperature ............................................................ 55
C to +100
C
Junction Temperature................................................................................ 100
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
1.5 mm) ...................................................... 260
C
4N25/26/27/28--Characteristics
T
A
=25
C
* Indicates JEDEC registered values
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
V
F
--
1.3
1.5
V
I
F
=50 mA
Reverse Current*
I
R
--
0.1
100
A
V
R
=3.0 V
Capacitance
C
O
--
25
--
pF
V
R
=0
Detector
Breakdown Voltage*
Collector-Emitter
BV
CEO
30
--
--
V
I
C
=1.0 mA
Emitter-Collector
BV
ECO
7.0
--
--
I
E
=100
A
Collector-Base
BV
CBO
70
--
--
I
C
=100
A
I
CEO
(dark)*
4N25/26/27
4N28
--
--
5.0
10
50
100
nA
V
CE
=10 V, (base open)
I
CBO
(dark)*
--
--
2.0
20
nA
V
CB
=10 V, (emitter open)
Capacitance, Collector-Emitter
C
CE
--
6.0
--
pF
V
CE
=0
Package
DC Current Transfer Ratio*
4N25/26
CTR
20
50
--
%
V
CE
=10 V,
I
F
=10 mA
4N27/28
10
30
--
Isolation Voltage*
4N25
V
IO
2500
--
--
V
Peak, 60 Hz
4N26/27
1500
--
--
4N28
500
--
--
Saturation Voltage, Collector-Emitter
V
CE(sat)
--
--
0.5
V
I
CE
=2.0 mA,
I
F
=50 mA
Resistance, Input to Output*
R
IO
100
--
--
G
V
IO
=500 V
Coupling Capacitance
C
IO
--
0.5
--
pF
f=1.0 MHz
Rise and Fall Times
t
r
,
t
f
--
2.0
--
s
I
F
=10 mA
V
CE
=10 V,
R
L
=100
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
Phototransistor, Industry Standard
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
255
March 27, 2000-00
4N35/36/37/38--Characteristics
T
A
=25
C
* Indicates JEDEC registered value
H11A1 through H11A5--Characteristics
T
A
=25
C
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
V
F
0.9
1.3
1.5
1.7
V
I
F
=10 mA
I
F
=10 mA,
T
A
=55
C
Reverse Current*
I
R
0.1
10
A
V
R
=6.0 V
Capacitance
C
O
25
--
pF
V
R
=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter*
4N35/36/37
BV
CEO
30
--
--
V
I
C
=1.0 mA
4N38
80
--
--
Breakdown Voltage, Emitter-Collector*
BV
ECO
7.0
--
--
V
I
E
=100
A
Breakdown Voltage, Collector-Base*
4N35/36/37
BV
CBO
70
--
--
V
I
C
=100
A, I
B
=1.0
A
4N38
80
--
--
--
Leakage Current, Collector-Emitter*
4N35/36/37
I
CEO
--
5.0
50
nA
V
CE
=10 V, I
F
=0
4N38
--
--
50
V
CE
=60 V, I
F
=0
Leakage Current, Collector-Emitter*
4N35/36/37
I
CEO
--
--
500
A
V
CE
=30 V, I
F
=0, T
A
=100
C
4N38
--
6.0
--
V
CE
=60 V, I
F
=0, T
A
=100
C
Capacitance, Collector-Emitter
C
CE
--
6.0
--
pF
V
CE
=0
Package
DC Current Transfer Ratio*
4N35/36/37
CTR
100
--
--
%
V
CE
=10 V, I
F
=10 mA,
4N38
20
--
--
V
CE
=1.0 V, I
F
=20 mA
DC Current Transfer Ratio*
4N35/36/37
CTR
40
50
--
%
V
CE
=10 V,
I
F
=10 mA,
T
A
=55 to 100
C
4N38
--
--
30
--
--
Resistance, Input to Output*
R
IO
10
11
--
--
V
IO
=500 V
Coupling Capacitance
C
IO
--
0.5
--
pF
f=1.0 MHz
Switching Time*
t
ON
,
t
OFF
--
10
--
s
I
C
=2.0 mA, R
L
=100
, V
CC
=10 V
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
H11A1H11A4
V
F
--
1.1
1.5
V
I
F
=10 mA
H11A5
--
1.1
1.7
Reverse Current
I
R
--
--
10
A
V
R
=3.0 V
Capacitance
C
0
--
50
--
pF
V
R
=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter
BV
CEO
30
--
--
V
I
C
=1.0 mA,
I
F
=0 mA
Breakdown Voltage, Emitter-Collector
BV
ECO
7.0
--
--
V
I
E
=100
A,
I
F
=0 mA
Breakdown Voltage, Collector-Base
BV
CBO
70
--
--
V
I
C
=10
A,
I
F
=0 mA
Leakage Current, Collector-Emitter
I
CEO
--
5.0
50
nA
V
CE
=10 V,
I
F
=0 mA
Capacitance, Collector-Emitter
C
CE
--
6.0
--
pF
V
CE
=0
Package
DC Current Transfer Ratio
H11A1
CTR
50
--
--
%
V
CE
=10 V,
I
F
=10 mA
H11A2/3
20
--
--
H11A4
10
--
--
H11A5
30
--
--
Saturation Voltage, Collector-Emitter
V
CE
sat
--
--
0.4
V
I
CE
=0.5 mA,
I
F
=10 mA
Capacitance, Input to Output
C
IO
--
0.5
--
pF
--
Switching Time
t
ON
,
t
OFF
--
3.0
--
s
I
C
=2.0 mA, R
L
=100
, V
CE
=10 V
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
Phototransistor, Industry Standard
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
256
March 27, 2000-00
MCT2/MCT2E--Characteristics T
A
=25
C
MCT270 through MCT277--Characteristics T
A
=25
C
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
V
F
--
1.1
1.5
V
I
F
=20 mA
Reverse Current
I
R
--
--
10
A
V
R
=3.0 V
Capacitance
C
O
--
25
--
pF
V
R
=0, f=1.0 MHz
Detector
Breakdown Voltage
Collector-Emitter
BV
CEO
30
--
--
V
I
C
=1.0 mA,
I
F
=0 mA
Emitter-Collector
BV
ECO
7.0
--
--
I
E
=100
A,
I
F
=0 mA
Collector-Base
BV
CBO
70
--
--
I
C
=10
A,
I
F
=0 mA
Leakage Current
Collector-Emitter
I
CBO
--
5.0
50
nA
V
CE
=10 V,
I
F
=0
Collector-Base
I
CBO
--
--
20
--
Capacitance, Collector-Emitter
--
C
CE
--
10
--
pF
V
CE
=0
Package
DC Current Transfer Ratio
CTR
20
60
--
%
V
CE
=10 V,
I
F
=10 mA
Capacitance, Input to Output
C
IO
--
0.5
--
pF
--
Resistance, Input to Output
R
IO
--
100
--
G
--
Switching Time
t
ON
,
t
OFF
--
3.0
--
s
I
C
=2.0 mA, R
L
=100
, V
CE
=10 V
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
V
F
--
--
1.5
V
I
F
=20 mA
Reverse Current
I
R
--
--
10
A
V
R
=3.0 V
Capacitance
C
O
--
25
--
pF
V
R
=0, f=1.0 MHz
Detector
Breakdown Voltage
Collector-Emitter
BV
CEO
30
--
--
V
I
C
=10
A,
I
F
=0 mA
Emitter-Collector
BV
ECO
7.0
--
--
I
E
=10
A,
I
F
=0 mA
Collector-Base
BV
CBO
70
--
--
--
I
C
=10
A,
I
F
=0 mA
Leakage Current, Collector-Emitter
I
CEO
--
--
50
nA
V
CE
=10 V,
I
F
=0 mA
Package
DC Current Transfer Ratio
MCT270
CTR
50
--
--
%
V
CE
=10 V, I
F
=10 mA
MCT271
45
--
90
MCT272
75
--
150
MCT273
125
--
250
MCT274
225
--
400
MCT275
70
--
210
MCT276
15
--
60
MCT277
100
--
--
Current Transfer Ratio, CollectorEmitter
MCT271276
CTR
CE
12.5
--
--
%
V
CE
=0.4 V, I
F
=16 mA
MCT277
40
--
--
--
CollectorEmitter Saturation Voltage
V
CE
sat
--
--
0.4
V
I
CE
=2.0 mA, I
F
=16 mA
Capacitance, Input to Output
C
IO
--
0.5
--
pF
--
Resistance, Input to Output
R
IO
--
10
12
--
V
IO
=500 VDC
Switching Time
MCT270/272
t
ON
, t
OFF
--
--
10
s
I
C
=2.0 mA,
R
L
=100
,
V
CE
=5.0 V
MCT271
--
--
7.0
MCT273
--
--
20
MCT274
--
--
25
MCT275/277
--
--
15
MCT276
--
--
3.5
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
Phototransistor, Industry Standard
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
257
March 27, 2000-00
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-saturated and Saturated
CTR, T
A
=25
C vs. LED Current
Figure 3. Normalized Non-saturated and Saturated
CTR, T
A
=50
C vs. LED Current
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
F
- Forward Current - mA
V
F
- Forward Voltage - V
T
A
= 55
C
T
A
= 25
C
T
A
= 85
C
Normalized to:
0.0
0.5
1.0
1.5
0
1 10 100
I
F
- LED Current - mA
NCTR
NCTR(SAT)
NCTR - Normlized CTR
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25
C
T
A
=25
C
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25
C
NCTR
NCTR(SAT)
T
A
=50
C
Figure 4. Normalized Non-saturated and Saturated
CTR, T
A
=70
C vs. LED Current
Figure 5. Normalized Non-saturated and Saturated
CTR, T
A
=85
C vs. LED Current
Figure 6. Collector-emitter Current vs. Temperature
and LED Current
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce=0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25
C
NCTR
NCTR(SAT)
T
A
=70
C
100
10
1
.1
0.0
0.5
1.0
1.5
I
F
- LED Current - mA
NCTR - Normalized CTR
Normalized to:
CTRce(sat) Vce = 0.4 V
Vce=10 V, I
F
=10 mA, T
A
=25
C
NCTR
NCTR(SAT)
T
A
=85
C
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
50
C
70
C
85
C
I
F
- LED Current - mA
Ice - Collector Current - mA
25
C