2003-07-31
Rev.2
Page 1
IDP23E60
IDB23E60
Fast Switching EmCon Diode
Product Summary
V
RRM
600
V
I
F
23
A
V
F
1.5
V
T
jmax
175
C
Feature
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175C operating temperature
Easy paralleling
P-TO220-3.SMD
P-TO220-2-2.
Pin 1
PIN 2
PIN 3
C
A
-
NC
C
A
Marking
D23E60
D23E60
Type
Package
Ordering Code
IDP23E60
P-TO220-2-2.
Q67040-S4486
IDB23E60
P-TO220-3.SMD Q67040-S4487
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Continous forward current
T
C
=25C
T
C
=90C
I
F
41
28
A
Surge non repetitive forward current
T
C
=25C, t
p
=10 ms, sine halfwave
I
FSM
89
Maximum repetitive forward current
T
C
=25C, t
p
limited by T
jmax
, D=0.5
I
FRM
65
Power dissipation
T
C
=25C
T
C
=90C
P
tot
115
65
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
C
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
S
255
C
2003-07-31
Rev.2
Page 2
IDP23E60
IDB23E60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.3
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=600V, T
j
=25C
V
R
=600V, T
j
=150C
I
R
-
-
-
-
50
1900
A
Forward voltage drop
I
F
=23A, T
j
=25C
I
F
=23A, T
j
=150C
V
F
-
-
1.5
1.5
2
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2003-07-31
Rev.2
Page 3
IDP23E60
IDB23E60
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Reverse recovery time
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=150C
t
rr
-
-
-
120
164
170
-
-
-
ns
Peak reverse current
V
R
=400V, I
F
= 23A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=150C
I
rrm
-
-
-
17
19.5
21.5
-
-
-
A
Reverse recovery charge
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=150C
Q
rr
-
-
-
970
1580
1770
-
-
-
nC
Reverse recovery softness factor
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=25C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=125C
V
R
=400V, I
F
=23A, di
F
/dt=1000A/s, T
j
=150C
S
-
-
-
4.4
4.8
5
-
-
-
2003-07-31
Rev.2
Page 4
IDP23E60
IDB23E60
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
175C
25
50
75
100
125
C
175
T
C
0
5
10
15
20
25
30
35
A
45
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: Tj 175 C
25
50
75
100
125
C
175
T
C
0
15
30
45
60
75
90
W
120
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0
0.5
1
1.5
V
2.5
V
F
0
10
20
30
40
50
A
70
I
F
-55C
25C
100C
150C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60
-20
20
60
100
C
160
T
j
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
2
V
F
11,5A
23A
46A
2003-07-31
Rev.2
Page 5
IDP23E60
IDB23E60
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
100
150
200
250
300
350
400
ns
500
t
rr
46A
23A
11.5A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125 C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
nC
2100
Q
rr
11.5A
23A
46A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
4
6
8
10
12
14
16
18
20
A
24
I
rr
46A
23A
11.5A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
3
4
5
6
7
8
9
10
11
13
S
46A
23A
11.5A
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