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Электронный компонент: IDD15E60

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2001-12-05
Page 1
Preliminary data
IDD15E60
Fast Switching EmConDiode
Product Summary
V
RRM
600
V
I
F
15
A
V
F
1.45
V
T
jmax
175
C
Feature
600 V EmContechnology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175C operating temperature
Easy paralleling
P-TO252-3-1.
Pin 1
PIN 2
PIN 3
NC
C
A
Marking
D15E60
Type
Package
Ordering Code
IDD15E60
P-TO252-3-1.
Q67040-S4380
Maximum Ratings,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Continous forward current
T
C
=25C
T
C
=90C
I
F
29.2
19.6
A
Surge non repetitive forward current
T
C
=25C, t
p
=10 ms, sine halfwave
I
FSM
60
Maximum repetitive forward current
T
C
=25C, t
p
limited by T
jmax
, D=0.5
I
FRM
45
Power dissipation
T
C
=25C
T
C
=90C
P
tot
83.3
47.2
W
Operating and storage temperature
T
j ,
T
stg
-55...+175
C
Soldering temperature
for 10 s (according to JEDEC J-STD-020A)
T
S
255
C
2001-12-05
Page 2
Preliminary data
IDD15E60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.8
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=600V, T
j
=25C
V
R
=600V, T
j
=150C
I
R
-
-
-
-
50
1250
A
Forward voltage drop
I
F
=15A, T
j
=25C
I
F
=15A, T
j
=150C
V
F
-
-
1.45
1.45
2
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2001-12-05
Page 3
Preliminary data
IDD15E60
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Reverse recovery time
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=25C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=125C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=150C
t
rr
-
-
-
87
124
131
-
-
-
ns
Peak reverse current
V
R
=400V, I
F
= 15 A, di
F
/dt
=1000A/s, T
j
=25C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=125C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=150C
I
rrm
-
-
-
13.7
16.4
19.3
-
-
-
A
Reverse recovery charge
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=25C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=125C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=150C
Q
rr
-
-
-
595
995
1104
-
-
-
nC
Reverse recovery softness factor
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=25C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=125C
V
R
=400V, I
F
=15A, di
F
/dt
=1000A/s, T
j
=150C
S
-
-
-
3.6
4.3
4.5
-
-
-
2001-12-05
Page 4
Preliminary data
IDD15E60
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
175C
25
50
75
100
125
C
175
T
C
0
5
10
15
20
A
30

I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: Tj 175 C
25
50
75
100
125
C
175
T
C
0
10
20
30
40
50
60
70
W
90

P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0
0.5
1
1.5
V
2.5
V
F
0
1
2
3
4
5
6
7
A
9

I
F
-55C
25C
100C
150C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60
-20
20
60
100
C
160
T
j
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
2

V
F
7.5A
15A
30A
2001-12-05
Page 5
Preliminary data
IDD15E60
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt
)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
0
50
100
150
200
250
300
350
400
ns
500

t
rr
30A
15A
7.5A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt
)
parameter: V
R
= 400V, T
j
= 125 C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
1000
1200
1400
1600
1800
2000
2200
nC
2600

Q
rr
15A
30A
60A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt
)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
4
5
6
7
8
9
10
11
12
13
14
15
16
A
18

I
rr
30A
15A
7.5A
8 Typ. reverse recovery softness factor
S = f(400)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
3
4
5
6
7
8
9
11

S
7,5A
15A
30A
2001-12-05
Page 6
Preliminary data
IDD15E60
9 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
IDD15E60
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-12-05
Page 7
Preliminary data
IDD15E60
P-TO252 (D-Pak)
symbol
[mm]
inch]
min
max
min
max
A
6.40
6.73
0.2520
0.2650
B
5.25
5.50
0.2067
0.2165
C
(0.65)
(1.15)
(0.0256) (0.0453)
D
0.63
0.89
0.0248
0.0350
E
F
2.19
2.39
0.0862
0.0941
G
0.76
0.98
0.0299
0.0386
H
0.90
1.21
0.0354
0.0476
K
5.97
6.23
0.2350
0.2453
L
9.40
10.40
0.3701
0.4094
M
0.46
0.58
0.0181
0.0228
N
0.87
1.15
0.0343
0.0453
P
0.51
-
0.0201
-
R
5.00
-
0.1969
-
S
4.17
-
0.1642
-
T
0.26
1.02
0.0102
0.0402
U
-
-
-
-
2.28
0.2520
dimensions
2001-12-05
Page 8
Preliminary data
IDD15E60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
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