2003-07-31
Rev.2
Page 1
IDP12E120
IDB12E120
Fast Switching EmCon Diode
Product Summary
V
RRM
1200
V
I
F
12
A
V
F
1.65
V
T
jmax
150
C
Feature
1200 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling
P-TO220-3.SMD
P-TO220-2-2.
Pin 1
PIN 2
PIN 3
C
A
-
NC
C
A
Marking
D12E120
D12E120
Type
Package
Ordering Code
IDP12E120
P-TO220-2-2.
Q67040-S4389
IDB12E120
P-TO220-3.SMD Q67040-S4385
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
1200
V
Continous forward current
T
C
=25C
T
C
=90C
I
F
28
17
A
Surge non repetitive forward current
T
C
=25C, t
p
=10 ms, sine halfwave
I
FSM
63
Maximum repetitive forward current
T
C
=25C, t
p
limited by T
jmax
, D=0.5
I
FRM
42.5
Power dissipation
T
C
=25C
T
C
=90C
P
tot
96
46
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
S
260
C
2003-07-31
Rev.2
Page 2
IDP12E120
IDB12E120
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.3
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=1200V, T
j
=25C
V
R
=1200V, T
j
=150C
I
R
-
-
-
-
100
1000
A
Forward voltage drop
I
F
=12A, T
j
=25C
I
F
=12A, T
j
=150C
V
F
-
-
1.65
1.7
2.15
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2003-07-31
Rev.2
Page 3
IDP12E120
IDB12E120
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Reverse recovery time
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=25C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=125C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=150C
t
rr
-
-
-
150
215
225
-
-
-
ns
Peak reverse current
V
R
=800V, I
F
= 12 A, di
F
/dt=800A/s, T
j
=25C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=125C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=150C
I
rrm
-
-
-
17
20.9
21.5
-
-
-
A
Reverse recovery charge
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=25C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=125C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=150C
Q
rr
-
-
-
1200
1840
2025
-
-
-
nC
Reverse recovery softness factor
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=25C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=125C
V
R
=800V, I
F
=12A, di
F
/dt=800A/s, T
j
=150C
S
-
-
-
5
5.8
5.9
-
-
-
2003-07-31
Rev.2
Page 4
IDP12E120
IDB12E120
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
150C
25
50
75
100
C
150
T
C
0
5
10
15
20
A
30
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: Tj 150C
25
50
75
100
C
150
T
C
0
10
20
30
40
50
60
70
80
W
100
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0
0.5
1
1.5
2
V
3
V
F
0
4
8
12
16
20
24
28
A
36
I
F
-55C
25C
100C
150C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60
-20
20
60
100
C
160
T
j
1
1.2
1.4
1.6
1.8
2
V
2.4
V
F
6A
12A
24A
2003-07-31
Rev.2
Page 5
IDP12E120
IDB12E120
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
0
100
200
300
400
500
600
ns
800
t
rr
24A
12A
6A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 800V, T
j
= 125 C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
nC
2500
Q
rr
6A
12A
24A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
6
8
10
12
14
16
18
20
22
A
26
I
rr
24A
12A
6A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
2
3
4
5
6
7
8
9
10
11
12
13
15
S
24A
12A
6A
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