2001-12-12
Page 1
IDP30E120
IDB30E120
Preliminary data
Fast Switching EmConDiode
Product Summary
V
RRM
1200
V
I
F
30
A
V
F
1.65
V
T
jmax
150
C
Feature
1200 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling
P-TO220-3.SMD
P-TO220-2-2.
Pin 1
PIN 2
PIN 3
C
A
-
NC
C
A
Marking
D30E120
D30E120
Type
Package
Ordering Code
IDP30E120
P-TO220-2-2.
Q67040-S4390
IDB30E120
P-TO220-3.SMD Q67040-S4383
Maximum Ratings,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
1200
V
Continous forward current
T
C
=25C
T
C
=90C
I
F
50
30
A
Surge non repetitive forward current
T
C
=25C, t
p
=10 ms, sine halfwave
I
FSM
102
Maximum repetitive forward current
T
C
=25C, t
p
limited by T
jmax
, D=0.5
I
FRM
76.5
Power dissipation
T
C
=25C
T
C
=90C
P
tot
138
66
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
S
260
C
2001-12-12
Page 2
IDP30E120
IDB30E120
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.9
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=1200V, T
j
=25C
V
R
=1200V, T
j
=150C
I
R
-
-
-
-
100
2500
A
Forward voltage drop
I
F
=30A, T
j
=25C
I
F
=30A, T
j
=150C
V
F
-
-
1.65
1.7
2.15
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2001-12-12
Page 3
IDP30E120
IDB30E120
Preliminary data
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Reverse recovery time
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=25C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=125C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=150C
t
rr
-
-
-
243
355
380
-
-
-
ns
Peak reverse current
V
R
=800V, I
F
= 30 A, di
F
/dt
=850A/s, T
j
=25C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=125C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=150C
I
rrm
-
-
-
23.7
28.3
29.5
-
-
-
A
Reverse recovery charge
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=25C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=125C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=150C
Q
rr
-
-
-
2630
4700
5200
-
-
-
nC
Reverse recovery softness factor
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=25C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=125C
V
R
=800V, I
F
=30A, di
F
/dt
=850A/s, T
j
=150C
S
-
-
-
6
7.4
7.5
-
-
-
2001-12-12
Page 4
IDP30E120
IDB30E120
Preliminary data
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
150C
25
50
75
100
C
150
T
C
0
5
10
15
20
25
30
35
40
45
A
55
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: Tj 150C
25
50
75
100
C
150
T
C
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0
0.5
1
1.5
2
V
3
V
F
0
10
20
30
40
50
60
70
A
90
I
F
-55C
25C
100C
150C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60
-20
20
60
100
C
160
T
j
1.2
1.4
1.6
1.8
2
V
2.4
V
F
15A
30A
60A
2001-12-12
Page 5
IDP30E120
IDB30E120
Preliminary data
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt
)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
200
300
400
500
600
700
800
900
ns
1100
t
rr
60A
30A
15A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt
)
parameter: V
R
= 800V, T
j
= 125 C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
2500
3000
3500
4000
4500
5000
5500
nC
6500
Q
rr
15A
30A
60A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt
)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
5
10
15
20
25
A
35
I
rr
60A
30A
15A
8 Typ. reverse recovery softness factor
S = f(800)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
4
6
8
10
12
14
18
S
60A
30A
15A
2001-12-12
Page 6
IDP30E120
IDB30E120
Preliminary data
9 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
IDP30E120
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-12-12
Page 7
IDP30E120
IDB30E120
Preliminary data
TO-220-2-2
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.10
0.3819
0.3976
B
15.30
15.90
0.6024
0.6260
C
0.65
0.85
0.0256
0.0335
D
3.55
3.85
0.1398
0.1516
E
2.60
3.00
0.1024
0.1181
F
9.00
9.40
0.3543
0.3701
G
13.00
14.00
0.5118
0.5512
H
17.20
17.80
0.6772
0.7008
J
4.40
4.80
0.1732
0.1890
K
0.40
0.60
0.0157
0.0236
L
M
N
P
1.10
1.40
0.0433
0.0551
T
U
V
W
X
0.00
0.40
0.0000
0.0157
0.26 typ.
6.6 typ.
0.51 typ.
13.0 typ.
7.5 typ.
0.295 typ.
2.4 typ.
0.095 typ.
4.4 typ.
0.173 typ.
2.54 typ.
0.1 typ.
dimensions
0.41 typ.
1.05 typ.
A
U
V
W
G
M
T
J
F
L
X
P
D
C
K
N
B
H
E
2001-12-12
Page 8
IDP30E120
IDB30E120
Preliminary data
symbol
[mm]
[inch]
min
max
min
max
A
9.80
10.00
0.3858
0.3937
B
C
1.25
1.75
0.0492
0.0689
D
0.95
1.15
0.0374
0.0453
E
F
0.72
0.85
0.0283
0.0335
G
H
4.30
4.50
0.1693
0.1772
K
1.28
1.40
0.0504
0.0551
L
9.00
9.40
0.3543
0.3701
M
2.30
2.50
0.0906
0.0984
N
P
0.00
0.20
0.0000
0.0079
Q
3.30
3.90
0.1299
0.1535
R
S
1.70
2.50
0.0669
0.0984
T
0.50
0.65
0.0197
0.0256
U
V
W
X
Y
Z
9.40 typ.
0.3701 typ.
16.15 typ.
0.6358 typ.
6.43 typ.
0.2532 typ.
4.60 typ.
0.1811 typ.
10.8 typ.
0.4252 typ.
1.35 typ.
0.0532 typ.
14.1 typ.
0.5551 typ.
8 max
8 max
dimensions
2.54 typ.
0.1 typ.
5.08 typ.
0.2 typ.
1.3 typ.
0.0512 typ.
TO-220-3-45 (P-TO220SMD)
2001-12-12
Page 9
IDP30E120
IDB30E120
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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