SGP15N120

SGW15N120

Power Semiconductors

Jul-02

Fast IGBT in NPT-technology

40% lower E

off

compared to previous generation

Short circuit withstand time 10

Designed for:

- Motor controls
- Inverter
- SMPS

NPT-Technology offers:

- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability

Complete product spectrum and PSpice Models :

http://www.infineon.com/igbt/

Type

off

Package

Ordering Code

SGP15N120

1200V

15A

1.5mJ

150

TO-220AB

Q67040-S4274

SGB15N120

TO-263AB(D2PAK)

Q67040-S4275

SGW15N120

TO-247AC

Q67040-S4276

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

C E

1200

DC collector current
T

= 25

= 100

30
15

Pulsed collector current, t

limited by T

jmax

C p u l s

Turn off safe operating area
V

1200V, T

150

Gate-emitter voltage

G E

Avalanche energy, single pulse
I

= 15A, V

= 50V, R

= 25

, start at T

= 25

A S

Short circuit withstand time

= 15V, 100V

1200V, T

150

S C

Power dissipation
T

= 25

t o t

198

Operating junction and storage temperature

, T

s t g

-55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

260

Allowed number of short circuits: <1000; time between short circuits: >1s.

P-TO-220-3-1
(TO-220AB)

P-TO-247-3-1
(TO-247AC)

P-TO-263-3-2 (D²-PAK)
(TO-263AB)

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic
IGBT thermal resistance,
junction case

t h J C

0.63

Thermal resistance,
junction ambient

t h J A

TO-220AB
TO-247AC

62
40

SMD version, device on PCB

t h J A

TO-263AB(D2PAK)

K/W

Electrical Characteristic, at T

= 25

C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Static Characteristic
Collector-emitter breakdown voltage

( B R ) C E S

G E

=0V,

=1000

1200

Collector-emitter saturation voltage

C E ( s a t )

G E

= 15V, I

=15A

=25

=150

2.5

3.1
3.7

3.6
4.3

Gate-emitter threshold voltage

G E ( t h )

=600

A,V

C E

G E

Zero gate voltage collector current

C E S

=1200V,V

=0V

=25

=150

-
-

200
800

Gate-emitter leakage current

G E S

=0V,V

=20V

100

Transconductance

f s

C E

=20V, I

=15A

Dynamic Characteristic
Input capacitance

i s s

1250

1500

Output capacitance

o s s

100

120

Reverse transfer capacitance

r s s

C E

=25V,

G E

=0V,

f=1MHz

Gate charge

G a t e

C C

=960V, I

=15A

G E

=15V

130

175

Internal emitter inductance
measured 5mm (0.197 in.) from case

T O-220AB
TO-247AC

Short circuit collector current

C ( S C )

G E

=15V,t

S C

100V

C C

1200V,

150

145

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

(one layer, 70

m thick) copper area for

collector connection. PCB is vertical without blown air.

Allowed number of short circuits: <1000; time between short circuits: >1s.

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

Switching Characteristic, Inductive Load, at T

=25

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic
Turn-on delay time

d ( o n )

Rise time

Turn-off delay time

d ( o f f )

580

750

Fall time

Turn-on energy

o n

1.1

1.5

Turn-off energy

o f f

0.8

1.1

Total switching energy

t s

=25

C C

=800V,I

=15A,

G E

=15V/0V,

=33

1 )

=180nH,

1 )

=40pF

Energy losses include
"tail" and diode
reverse recovery.

1.9

2.6

Switching Characteristic, Inductive Load, at T

=150

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic
Turn-on delay time

d ( o n )

Rise time

Turn-off delay time

d ( o f f )

652

780

Fall time

Turn-on energy

o n

1.9

2.3

Turn-off energy

o f f

1.5

2.0

Total switching energy

t s

=150

C C

=800V,

=15A,

G E

=15V/0V,

=33

1 )

=180nH,

1 )

=40pF

Energy losses include
"tail" and diode
reverse recovery.

3.4

4.3

Leakage inductance L

and stray capacity C

due to dynamic test circuit in figure E.

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

COLLE

OR CURRE

10Hz

100Hz

1kHz

10kHz

100kHz

10A

20A

30A

40A

50A

60A

70A

=110°C

=80°C

COLLE

OR CURRE

10V

100V

1000V

0.1A

10A

100A

1ms

200

SWITCHING FREQUENCY

COLLECTOR

EMITTER VOLTAGE

Figure 1. Collector current as a function of
switching frequency
(T

150

C, D = 0.5, V

= 800V,

= +15V/0V, R

= 33

)

Figure 2. Safe operating area

(D = 0, T

= 25

C, T

150

tot

I
SS

25°C

50°C

75°C

100°C 125°C

25W

50W

75W

100W

125W

150W

175W

200W

COLLE

OR CURRE

25°C

50°C

75°C

100°C

125°C

10A

15A

20A

25A

30A

35A

CASE TEMPERATURE

Figure 3. Power dissipation as a function
of case temperature
(T

150

Figure 4. Collector current as a function of
case temperature
(V

15V, T

150

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

COLLE

OR CURRE

10A

20A

30A

40A

50A

15V

13V

11V

G E

=17V

COLLE

OR CURRE

10A

20A

30A

40A

50A

15V

13V

11V

G E

=17V

COLLECTOR

EMITTER VOLTAGE

COLLECTOR

EMITTER VOLTAGE

Figure 5. Typical output characteristics
(T

= 25

Figure 6. Typical output characteristics
(T

= 150

COLLE

OR CURRE

11V

10A

20A

30A

40A

50A

=-40°C

=+150°C

=+25°C

CE(sat)

COLLE

CTOR

ITT

SATU

ATI

L
T

-50°C

0°C

50°C

100°C

150°C

=30A

=15A

=7.5A

GATE

EMITTER VOLTAGE

JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics
(V

= 20V)

Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V

= 15V)

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

t
,

ITC

10A

20A

30A

40A

10ns

100ns

1000ns

d(on)

d(off)

t
,

ITC

10ns

100ns

1000ns

d(on)

d(off)

COLLECTOR CURRENT

GATE RESISTOR

Figure 9. Typical switching times as a
function of collector current
(inductive load, T

= 150

= 800V, V

= +15V/0V, R

= 33

dynamic test circuit in Fig.E )

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T

= 150

= 800V, V

= +15V/0V, I

= 15A,

dynamic test circuit in Fig.E )

t
,

ITC

-50°C

0°C

50°C

100°C

150°C

10ns

100ns

1000ns

d(on)

d(off)

GE(th)

ITT

ESH

L
D

L
T

-50°C

0°C

50°C

100°C

150°C

typ.

min.

max.

JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V

= 800V,

= +15V/0V, I

= 15A, R

= 33

dynamic test circuit in Fig.E )

Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I

= 0.3mA)

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

ITC

I
N

L
O

SSE

10A

20A

30A

40A

50A

0mJ

2mJ

4mJ

6mJ

8mJ

10mJ

12mJ

14mJ

off

ITC

I
N

L
O

SSE

0mJ

1mJ

2mJ

3mJ

4mJ

5mJ

off

COLLECTOR CURRENT

GATE RESISTOR

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T

= 150

= 800V, V

= +15V/0V, R

= 33

dynamic test circuit in Fig.E )

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T

= 150

= 800V, V

= +15V/0V, I

= 15A,

dynamic test circuit in Fig.E )

I
T

CHI

NG E

-50°C

0°C

50°C

100°C

150°C

0mJ

1mJ

2mJ

3mJ

4mJ

off

thJC

SIEN

T TH

L I

1µs

10µs

100µs

1ms

10ms 100ms

-3

K/W

-2

K/W

-1

K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

JUNCTION TEMPERATURE

PULSE WIDTH

Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V

= 800V,

= +15V/0V, I

= 15A, R

= 33

dynamic test circuit in Fig.E )

Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t

/ T)

*) E

and E

include losses

due to diode recovery.

*) E

and E

include losses

due to diode recovery.

*) E

and E

include losses

due to diode recovery.

, ( K / W )

( s )

0.09751

0.67774

0.29508

0.11191

0.13241

0.00656

0.10485

0.00069

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

TER

L
T

0nC

50nC

100nC

150nC

10V

15V

20V

=960V

10V

20V

30V

100pF

1nF

rss

oss

iss

GATE CHARGE

COLLECTOR

EMITTER VOLTAGE

Figure 17. Typical gate charge
(I

= 15A)

Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V

= 0V, f = 1MHz)

ORT

RCUI

ND T

I
M

10V

11V

12V

13V

14V

15V

C(sc)

ORT

RCUI

COLL

R CURRE

10V

12V

14V

16V

18V

20V

50A

100A

150A

200A

250A

300A

GATE

EMITTER VOLTAGE

GATE

EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V

= 1200V, start at T

= 25

Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V

1200V, T

= 25

C, T

150

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

dimensions

symbol

[mm]

[inch]

min

max

min

max

9.70

10.30

0.3819

0.4055

14.88

15.95

0.5858

0.6280

0.65

0.86

0.0256

0.0339

3.55

3.89

0.1398

0.1531

2.60

3.00

0.1024

0.1181

6.00

6.80

0.2362

0.2677

13.00

14.00

0.5118

0.5512

4.35

4.75

0.1713

0.1870

0.38

0.65

0.0150

0.0256

0.95

1.32

0.0374

0.0520

2.54 typ.

0.1 typ.

4.30

4.50

0.1693

0.1772

1.17

1.40

0.0461

0.0551

2.30

2.72

0.0906

0.1071

TO-220AB

dimensions

symbol

[mm]

[inch]

min

max

min

max

9.80

10.20

0.3858

0.4016

0.70

1.30

0.0276

0.0512

1.00

1.60

0.0394

0.0630

1.03

1.07

0.0406

0.0421

2.54 typ.

0.1 typ.

0.65

0.85

0.0256

0.0335

5.08 typ.

0.2 typ.

4.30

4.50

0.1693

0.1772

1.17

1.37

0.0461

0.0539

9.05

9.45

0.3563

0.3720

2.30

2.50

0.0906

0.0984

15 typ.

0.5906 typ.

0.00

0.20

0.0000

0.0079

4.20

5.20

0.1654

0.2047

8° max

2.40

3.00

0.0945

0.1181

0.40

0.60

0.0157

0.0236

10.80

0.4252

1.15

0.0453

6.23

0.2453

4.60

0.1811

9.40

0.3701

TO-263AB (D

Pak)

16.15

0.6358

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

dimensions

symbol

[mm]

[inch]

min

max

min

max

4.78

5.28

0.1882

0.2079

2.29

2.51

0.0902

0.0988

1.78

2.29

0.0701

0.0902

1.09

1.32

0.0429

0.0520

1.73

2.06

0.0681

0.0811

2.67

3.18

0.1051

0.1252

0.76 max

0.0299 max

20.80

21.16

0.8189

0.8331

15.65

16.15

0.6161

0.6358

5.21

5.72

0.2051

0.2252

19.81

20.68

0.7799

0.8142

3.560

4.930

0.1402

0.1941

3.61

0.1421

6.12

6.22

0.2409

0.2449

TO-247AC

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

Figure A. Definition of switching times

r r m

90% I

r r m

10% I

r r m

di /dt

r r

i,v

di /dt

r r

Q =Q

r r

t =t

r r

Figure C. Definition of diodes
switching characteristics

p(t)

T (t)

Figure D. Thermal equivalent
circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit
Leakage inductance L

=180nH,

and stray capacity C

=40pF.

SGP15N120

SGW15N120

Power Semiconductors

Jul-02

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: Q67040-S4274

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: Q67040-S4274