SKP06N60,

SKB06N60
SKA06N60

Jul-02

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

75% lower E

off

compared to previous generation

combined with low conduction losses

Short circuit withstand time 10

Designed for:

- Motor controls
- Inverter

NPT-Technology for 600V applications offers:

- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability

Very soft, fast recovery anti-parallel EmCon diode

Isolated TO-220, 2.5kV, 60s

Complete product spectrum and PSpice Models :

http://www.infineon.com/igbt/

Type

CE(sat)

Package

Ordering Code

SKP06N60

600V

2.3V

150

TO-220AB

Q67040-S4230

SKB06N60

TO-263AB

Q67040-S4231

SKA06N60

TO-220-3-31

Q67040-S4340

Maximum Ratings

Value

Parameter

Symbol

SKP06N60
SKB06N60

SKA06N60

Unit

Collector-emitter voltage

C E

600

DC collector current
T

= 25

= 100

6.9

5.0

Pulsed collector current, t

limited by T

jmax

C p u l s

Turn off safe operating area
V

600V, T

150

Diode forward current
T

= 25

= 100

Diode pulsed current, t

limited by T

jmax

F p u l s

Gate-emitter voltage

G E

Short circuit withstand time

= 15V, V

600V, T

150

S C

Power dissipation
T

= 25

t o t

Mounting Torque, M3 Screw

1.0

Operating junction and storage temperature

, T

s t g

-55...+150 -55...+150

Allowed number of short circuits: <1000; time between short circuits: >1s.

Maximum mounting processes: 3

P-TO-220-3-1
(TO-220AB)

P-TO-220-3-31
(FullPAK)

P-TO-263-3-2 (D²-PAK)
(TO-263AB)

SKP06N60,

SKB06N60
SKA06N60

Jul-02

Thermal Resistance

Max. Value

Parameter

Symbol

Conditions

SKP06N60
SKB06N60

SKA06N60

Unit

Characteristic
IGBT thermal resistance,
junction case

t h J C

1.85

3.9

Diode thermal resistance,
junction case

t h J C D

3.5

5.0

Thermal resistance,
junction ambient

t h J A

TO-220AB

TO220-3-31

SMD version, device on PCB

t h J A

TO-263AB

K/W

Electrical Characteristic, at T

= 25

C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic
Collector-emitter breakdown voltage

( B R ) C E S

G E

=0V, I

=500

600

Collector-emitter saturation voltage

C E ( s a t )

G E

= 15V, I

=6A

=25

=150

1.7

2.0
2.3

2.4
2.8

Diode forward voltage

G E

=0V, I

=6A

=25

=150

1.2

1.4

1.25

1.8

1.65

Gate-emitter threshold voltage

G E ( t h )

=250

A,V

C E

G E

Zero gate voltage collector current

C E S

C E

=600V,V

G E

=0V

=25

=150

-
-

700

Gate-emitter leakage current

G E S

C E

=0V,V

G E

=20V

100

Transconductance

f s

C E

=20V, I

=6A

4.2

Dynamic Characteristic
Input capacitance

i s s

350

420

Output capacitance

o s s

Reverse transfer capacitance

r s s

C E

=25V,

G E

=0V,

f=1MHz

Gate charge

G a t e

C C

=480V, I

=6A

G E

=15V

Internal emitter inductance
measured 5mm (0.197 in.) from case

T O-220AB

Short circuit collector current

C ( S C )

G E

=15V,t

S C

C C

600V,

150

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

(one layer, 70

m thick) copper area for

collector connection. PCB is vertical without blown air.

Allowed number of short circuits: <1000; time between short circuits: >1s.

SKP06N60,

SKB06N60
SKA06N60

Jul-02

Switching Characteristic, Inductive Load, at T

=25

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic
Turn-on delay time

d ( o n )

Rise time

Turn-off delay time

d ( o f f )

220

264

Fall time

Turn-on energy

o n

0.110

0.127

Turn-off energy

o f f

0.105

0.137

Total switching energy

t s

=25

C C

=400V,I

=6A,

G E

=0/15V,

=50

1 )

=180nH,

1 )

=250pF

Energy losses include
"tail" and diode
reverse recovery.

0.215

0.263

Anti-Parallel Diode Characteristic
Diode reverse recovery time

r r

-
-
-

200

183

-
-
-

Diode reverse recovery charge

r r

200

Diode peak reverse recovery current

r r m

2.8

Diode peak rate of fall of reverse
recovery current during t

r r

/dt

=25

=200V, I

=6A,

/dt=200A/

180

Switching Characteristic, Inductive Load, at T

=150

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic
Turn-on delay time

d ( o n )

Rise time

Turn-off delay time

d ( o f f )

248

298

Fall time

Turn-on energy

o n

0.167

0.192

Turn-off energy

o f f

0.153

0.199

Total switching energy

t s

=150

C C

=400V,I

=6A,

G E

=0/15V,

=50

1 )

=180nH,

1 )

=250pF

Energy losses include
"tail" and diode
reverse recovery.

0.320

0.391

Anti-Parallel Diode Characteristic
Diode reverse recovery time

r r

-
-
-

290

263

-
-
-

Diode reverse recovery charge

r r

500

Diode peak reverse recovery current

r r m

5.0

Diode peak rate of fall of reverse
recovery current during t

r r

/dt

=150

=200V, I

=6A,

/dt=200A/

200

Leakage inductance L

and Stray capacity C

due to dynamic test circuit in Figure E.

SKP06N60,

SKB06N60
SKA06N60

Jul-02

COLLE

OR CURRE

10Hz

100Hz

1kHz

10kHz

100kHz

10A

20A

30A

SKP06N60

SKB06N60

SKA06N60

=110°C

=80°C

COLLE

OR CURRE

10V

100V

1000V

0,1A

10A

SKP06N60

SKB06N60

SKA06N60

1ms

200

SWITCHING FREQUENCY

COLLECTOR

EMITTER VOLTAGE

Figure 1. Collector current as a function of
switching frequency
(T

150

C, D = 0.5, V

= 400V,

= 0/+15V, R

= 50

)

Figure 2. Safe operating area

(D = 0, T

= 25

C, T

150

tot

R DIS

I
P

I
O

25°C

50°C

75°C

100°C

125°C

20W

40W

60W

80W

SKP06N60
SKB06N60

SKA06N60

COLLE

OR CURRE

25°C

50°C

75°C

100°C

125°C

10A

SKA06N60

SKP06N60
SKB06N60

CASE TEMPERATURE

Figure 3. Power dissipation as a function
of case temperature
(T

150

Figure 4. Collector current as a function of
case temperature
(V

15V, T

150

SKP06N60,

SKB06N60
SKA06N60

Jul-02

COLLE

OR CURRE

10A

15A

20A

15V
13V
11V
9V
7V
5V

=20V

COLLE

OR CURRE

10A

15A

20A

15V
13V
11V
9V
7V
5V

=20V

COLLECTOR

EMITTER VOLTAGE

COLLECTOR

EMITTER VOLTAGE

Figure 5. Typical output characteristics
(T

= 25

Figure 6. Typical output characteristics
(T

= 150

COLLE

OR CURRE

10V

10A

12A

14A

16A

18A

20A

-55°C
+150°C

=+25°C

CE(sat)

COLLE

ITT

SATU

ATI

L
T

-50°C

0°C

50°C

100°C 150°C

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

GATE

EMITTER VOLTAGE

JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics
(V

= 10V)

Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V

= 15V)

= 6A

= 12A

SKP06N60,

SKB06N60
SKA06N60

Jul-02

t
,

ITC

12A

15A

10ns

100ns

d(on)

d(off)

t
,

ITC

100

150

10ns

100ns

d(on)

d(off)

COLLECTOR CURRENT

GATE RESISTOR

Figure 9. Typical switching times as a
function of collector current
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, R

= 50

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, I

= 6A,

Dynamic test circuit in Figure E)

t
,

ITC

0°C

50°C

100°C

150°C

10ns

100ns

d(on)

d(off)

GE(th)

ITT

ESH

L
D

L
T

-50°C

0°C

50°C

100°C

150°C

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0V

5.5V

typ.

min.

max.

JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V

= 400V, V

= 0/+15V,

= 6A, R

= 50

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I

= 0.25mA)

SKP06N60,

SKB06N60
SKA06N60

Jul-02

ITC

I
N

L
O

SSE

12A

15A

0.0mJ

0.2mJ

0.4mJ

0.6mJ

0.8mJ

off

ITC

I
N

L
O

SSE

100

150

0.0mJ

0.2mJ

0.4mJ

0.6mJ

off

COLLECTOR CURRENT

GATE RESISTOR

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, R

= 50

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T

= 150

C, V

= 400V,

= 0/+15V, I

= 6A,

Dynamic test circuit in Figure E)

ITC

L
O

SSE

0°C

50°C

100°C

150°C

0.0mJ

0.1mJ

0.2mJ

0.3mJ

0.4mJ

off

JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V

= 400V, V

= 0/+15V,

= 6A, R

= 50

Dynamic test circuit in Figure E)

*) E

and E

include losses

due to diode recovery.

*) E

and E

include losses

due to diode recovery.

*) E

and E

include losses

due to diode recovery.

SKP06N60,

SKB06N60
SKA06N60

Jul-02

TER

L
T

0nC

15nC

30nC

45nC

10V

15V

20V

25V

480V

120V

10V

20V

30V

10pF

100pF

1nF

rss

oss

iss

GATE CHARGE

COLLECTOR

EMITTER VOLTAGE

Figure 16. Typical gate charge
(I

= 6A)

Figure 17. Typical capacitance as a
function of collector-emitter voltage
(V

= 0V, f = 1MHz)

ORT

RCUI

ND T

I
M

10V

11V

12V

13V

14V

15V

C(sc)

ORT

RCUI

COLL

R CURRE

10V

12V

14V

16V

18V

20V

20A

40A

60A

80A

100A

GATE

EMITTER VOLTAGE

GATE

EMITTER VOLTAGE

Figure 18. Short circuit withstand time as a
function of gate-emitter voltage
(V

= 600V, start at T

= 25

Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(V

600V, T

= 150

SKP06N60,

SKB06N60
SKA06N60

Jul-02

RSE

COVE

RY T

I
M

50A/

s 150A/

s 250A/

s 350A/

s 450A/

s 550A/

0ns

100ns

200ns

300ns

400ns

500ns

= 3A

= 6A

= 12A

E RE

RY CHA

50A/

s 150A/

s 250A/

s 350A/

s 450A/

s 550A/

0nC

200nC

400nC

600nC

800nC

1000nC

= 3A

= 6A

= 12A

/dt,

DIODE CURRENT SLOPE

/dt,

DIODE CURRENT SLOPE

Figure 20. Typical reverse recovery time as
a function of diode current slope
(V

= 200V, T

= 125

Dynamic test circuit in Figure E)

Figure 21. Typical reverse recovery charge
as a function of diode current slope
(V

= 200V, T

= 125

Dynamic test circuit in Figure E)

RSE

COVE

RY CURRE

50A/

s 150A/

s 250A/

s 350A/

s 450A/

s 550A/

10A

12A

= 3A

= 12A

= 6A

t
,

L
L

REV

E RE

CURRE

50A/

150A/

s 250A/

s 350A/

s 450A/

s 550A/

0A/

100A/

200A/

300A/

400A/

500A/

600A/

/dt,

DIODE CURRENT SLOPE

/dt,

DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery current
as a function of diode current slope
(V

= 200V, T

= 125

Dynamic test circuit in Figure E)

Figure 23. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V

= 200V, T

= 125

Dynamic test circuit in Figure E)

SKP06N60,

SKB06N60
SKA06N60

Jul-02

RWA

D CURRE

0.0V

0.5V

1.0V

1.5V

2.0V

10A

12A

100°C

-55°C

25°C

150°C

RWA

D V

AGE

-40°C

0°C

40°C

80°C 120°C

1.0V

1.5V

2.0V

FORWARD VOLTAGE

JUNCTION TEMPERATURE

Figure 24. Typical diode forward current as
a function of forward voltage

Figure 25. Typical diode forward voltage as
a function of junction temperature

thJCD

SIEN

MAL

IMP

1µs

10µs

100µs

1ms

10ms 100ms

-2

K/W

-1

K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

thJCD

SIEN

MAL

IMP

10µs

100µs

1ms

10ms 100ms

10s

-2

K/W

-1

K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

PULSE WIDTH

Figure 26. Diode transient thermal
impedance as a function of pulse width
(D = t

/ T)

Figure 27. Diode transient thermal
impedance as a function of pulse width

(D = t

/ T)

= 6A

= 12A

, ( K / W )

( s )

0.523

7.25*10

-2

0.550

6.44*10

-3

0.835

7.13*10

-4

1.592

7.16*10

-5

, ( K / W )

( s )

2.852

1.887

0.654

4.64*10

-2

0.665

2.88*10

-3

0.828

3.83*10

-4

SKP06N60
SKB06N60

SKA06N60

SKP06N60,

SKB06N60
SKA06N60

Jul-02

thJC

SIEN

T TH

L I

1µs

10µs 100µs 1ms

10m s 100ms

-3

K/W

-2

K/W

-1

K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

PULSE WIDTH

thJC

SIEN

T TH

L I

1µs

10µs 100µs 1ms 10ms 100ms 1s

10s

-3

K/W

-2

K/W

-1

K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

PULSE WIDTH

Figure 28. IGBT transient thermal
impedance as a function of pulse width

(D = t

/ T)

Figure 29. IGBT transient thermal
impedance as a function of pulse width

(D = t

/ T)

SKP06N60
SKB06N60

SKA06N60

R , ( K / W )

, ( s )

0.705

0.0341

0.561

3.74E-3

0.583

3.25E-4

/ R

R , ( K / W )

, ( s )

2.73

1.83

0.395

2.93*10

-2

0.353

2.46*10

-3

0.323

3.45*10

-4

SKP06N60,

SKB06N60
SKA06N60

Jul-02

dimensions

symbol

[mm]

[inch]

min

max

min

max

9.70

10.30

0.3819

0.4055

14.88

15.95

0.5858

0.6280

0.65

0.86

0.0256

0.0339

3.55

3.89

0.1398

0.1531

2.60

3.00

0.1024

0.1181

6.00

6.80

0.2362

0.2677

13.00

14.00

0.5118

0.5512

4.35

4.75

0.1713

0.1870

0.38

0.65

0.0150

0.0256

0.95

1.32

0.0374

0.0520

2.54 typ.

0.1 typ.

4.30

4.50

0.1693

0.1772

1.17

1.40

0.0461

0.0551

2.30

2.72

0.0906

0.1071

TO-220AB

dimensions

symbol

[mm]

[inch]

min

max

min

max

9.80

10.20

0.3858

0.4016

0.70

1.30

0.0276

0.0512

1.00

1.60

0.0394

0.0630

1.03

1.07

0.0406

0.0421

2.54 typ.

0.1 typ.

0.65

0.85

0.0256

0.0335

5.08 typ.

0.2 typ.

4.30

4.50

0.1693

0.1772

1.17

1.37

0.0461

0.0539

9.05

9.45

0.3563

0.3720

2.30

2.50

0.0906

0.0984

15 typ.

0.5906 typ.

0.00

0.20

0.0000

0.0079

4.20

5.20

0.1654

0.2047

8° max

2.40

3.00

0.0945

0.1181

0.40

0.60

0.0157

0.0236

10.80

0.4252

1.15

0.0453

6.23

0.2453

4.60

0.1811

9.40

0.3701

TO-263AB (D

Pak)

16.15

0.6358

SKP06N60,

SKB06N60
SKA06N60

Jul-02

Please refer to mounting instructions (application note AN-TO220-3-31-01)

dimensions

symbol

[mm]

[inch]

min

max

min

max

10.37

10.63

0.4084

0.4184

15.86

16.12

0.6245

0.6345

0.65

0.78

0.0256

0.0306

2.95 typ.

0.1160 typ.

3.15

3.25

0.124

0.128

6.05

6.56

0.2384

0.2584

13.47

13.73

0.5304

0.5404

3.18

3.43

0.125

0.135

0.45

0.63

0.0177

0.0247

1.23

1.36

0.0484

0.0534

2.54 typ.

0.100 typ.

4.57

4.83

0.1800

0.1900

2.57

2.83

0.1013

0.1113

2.51

2.62

0.0990

0.1030

P-TO220-3-31

SKP06N60,

SKB06N60
SKA06N60

Jul-02

Figure A. Definition of switching times

Figure B. Definition of switching losses

r r m

90% I

r r m

10% I

r r m

di /dt

r r

i,v

di /dt

r r

Q =Q

r r

t =t

r r

Figure C. Definition of diodes
switching characteristics

p(t)

T (t)

Figure D. Thermal equivalent
circuit

Figure E. Dynamic test circuit
Leakage inductance L

=180nH

and Stray capacity C

=250pF.

SKP06N60,

SKB06N60
SKA06N60

Jul-02

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: Q67040-S4340

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: Q67040-S4340