200
5-02-24
Rev.2
.1
Page 1
IDP04E120
Fast Switching EmCon Diode
Product Summary
V
RRM
1200
V
I
F
4
A
V
F
1.65
V
T
jmax
150
C
Feature
1200 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling
P
G-TO220-2-2.
Pin 1
PIN 2
PIN 3
C
A
-
Marking
D04E120
Type
Package
Ordering Code
IDP04E120
P
G-TO220-2-2. Q67040-S4388
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
1200
V
Continous forward current
T
C
=25C
T
C
=90C
I
F
11.2
7.1
A
Surge non repetitive forward current
T
C
=25C, t
p
=10 ms, sine halfwave
I
FSM
28
Maximum repetitive forward current
T
C
=25C, t
p
limited by T
jmax
, D=0.5
I
FRM
16.5
Power dissipation
T
C
=25C
T
C
=90C
P
tot
43.1
20.6
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
S
260
C
200
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Rev.2
.1
Page 2
IDP04E120
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.9
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=1200V, T
j
=25C
V
R
=1200V, T
j
=150C
I
R
-
-
-
-
100
350
A
Forward voltage drop
I
F
=4A, T
j
=25C
I
F
=4A, T
j
=150C
V
F
-
-
1.65
1.7
2.15
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
200
5-02-24
Rev.2
.1
Page 3
IDP04E120
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Reverse recovery time
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=25C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=125C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=150C
t
rr
-
-
-
115
180
185
-
-
-
ns
Peak reverse current
V
R
=800V, I
F
= 4 A, di
F
/dt=750A/s, T
j
=25C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=125C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=150C
I
rrm
-
-
-
7.15
8
8.1
-
-
-
A
Reverse recovery charge
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=25C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=125C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=150C
Q
rr
-
-
-
330
575
630
-
-
-
nC
Reverse recovery softness factor
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=25C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=125C
V
R
=800V, I
F
=4A, di
F
/dt=750A/s, T
j
=150C
S
-
-
-
6
7.8
7.8
-
-
-
200
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Rev.2
.1
Page 4
IDP04E120
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
150C
25
50
75
100
C
150
T
C
0
1
2
3
4
5
6
7
8
9
10
A
12
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: Tj 150C
25
50
75
100
C
150
T
C
0
5
10
15
20
25
30
35
W
45
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0
0.5
1
1.5
2
V
3
V
F
0
1
2
3
4
5
6
7
8
9
10
A
12
I
F
-55C
25C
100C
150C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60
-20
20
60
100
C
160
T
j
1
1.2
1.4
1.6
1.8
2
V
2.4
V
F
2A
4A
8A
200
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Rev.2
.1
Page 5
IDP04E120
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
0
50
100
150
200
250
300
350
400
ns
500
t
rr
8A
4A
2A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 800V, T
j
= 125 C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
400
450
500
550
600
650
700
750
800
nC
900
Q
rr
2A
4A
8A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
4
5
6
7
8
9
10
A
12
I
rr
8A
4A
2A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 800V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
0
2
4
6
8
10
12
14
16
20
S
8A
4A
2A
200
5-02-24
Rev.2
.1
Page 6
IDP04E120
9 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
IDP04E120
Z
thJ
C
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
200
5-02-24
Rev.2
.1
Page 7
IDP04E120
TO-220-2-2
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.10
0.3819
0.3976
B
15.30
15.90
0.6024
0.6260
C
0.65
0.85
0.0256
0.0335
D
3.55
3.85
0.1398
0.1516
E
2.60
3.00
0.1024
0.1181
F
9.00
9.40
0.3543
0.3701
G
13.00
14.00
0.5118
0.5512
H
17.20
17.80
0.6772
0.7008
J
4.40
4.80
0.1732
0.1890
K
0.40
0.60
0.0157
0.0236
L
M
N
P
1.10
1.40
0.0433
0.0551
T
U
V
W
X
0.00
0.40
0.0000
0.0157
0.26 typ.
6.6 typ.
0.51 typ.
13.0 typ.
7.5 typ.
0.295 typ.
2.4 typ.
0.095 typ.
4.4 typ.
0.173 typ.
2.54 typ.
0.1 typ.
dimensions
0.41 typ.
1.05 typ.
A
U
V
W
G
M
T
J
F
L
X
P
D
C
K
N
B
H
E
200
5-02-24
Rev.2
.1
Page
8
IDP04E120
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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