2002-01-14
Page 1
SDT12S60
SDT12S60
Preliminary data
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
V
RRM
600
V
Q
c
30
nC
I
F
12
A
P-TO220-2-2.
Pin 1
Pin 2
Pin 3
C
A
Marking
D12S60
Type
Package
Ordering Code
SDT12S60
P-TO220-2-2.
Q67040-S4470
Maximum Ratings,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous forward current,
T
C
=100C
I
F
12
A
RMS forward current
,
f
=50Hz
I
FRMS
17
Surge non repetitive forward current, sine halfwave
T
C
=25C, t
p
=10ms
I
FSM
36
Repetitive peak forward current
T
j
=150C, T
C
=100C, D=0.1
I
FRM
49
Non repetitive peak forward current
t
p
=10s, T
C
=25C
I
FMAX
120
i
2
t value
,
T
C
=25C, t
p
=10ms
i
2
dt
6.48
As
Repetitive peak reverse voltage
V
RRM
600
V
Surge peak reverse voltage
V
RSM
600
Power dissipation
,
T
C
=25C
P
tot
88.2
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
C
2002-01-14
Page 2
SDT12S60
SDT12S60
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.7
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Diode forward voltage
I
F
=12A, T
j
=25C
I
F
=12A, T
j
=150C
V
F
-
-
1.5
1.7
1.7
2.1
V
Reverse current
V
R
=600V, T
j
=25C
V
R
=600V, T
j
=150C
I
R
-
-
40
100
400
2000
A
Electrical Characteristics,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Total capacitive charge
V
R
=400V, I
F
=12A, di
F
/dt
=200A/s, T
j
=150C
Q
c
-
30
-
nC
Switching time
V
R
=400V, I
F
=12A, di
F
/dt
=200A/s, T
j
=150C
t
rr
-
n.a.
-
ns
Total capacitance
V
R
=1V, T
C
=25C, f=1MHz
V
R
=300V, T
C
=25C, f=1MHz
V
R
=600V, T
C
=25C, f=1MHz
C
-
-
-
450
45
43
-
-
-
pF
2002-01-14
Page 3
SDT12S60
SDT12S60
Preliminary data
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100 120 140
C
180
T
C
0
10
20
30
40
50
60
70
W
90
P
tot
2 Diode forward current
I
F
= f (T
C
)
parameter: T
j
175 C
0
20
40
60
80
100 120 140
C
180
T
C
0
2
4
6
8
10
12
14
16
18
20
A
24
I
F
4 Typ. forward power dissipation vs.
average forward current
P
F(AV)=f(I
F
)
T
C
=100C, d = t
p
/T
0
2
4
6
8
10
12
A
16
I
F(AV)
0
4
8
12
16
20
24
28
32
36
W
44
P
F(AV)
d=0.1
d=0.2
d=0.5
d=1
3 Typ. forward characteristic
I
F
= f (V
F
)
parameter: Tj , t
p
= 350 s
0
0.5
1
1.5
V
2.5
V
F
0
4
8
12
16
A
24
I
F
150C
125C
100C
25C
-40C
2002-01-14
Page 4
SDT12S60
SDT12S60
Preliminary data
6 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SDT12S60
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
5 Typ. reverse current vs. reverse voltage
I
R
=f(V
R
)
100 150 200 250 300 350 400 450 500
V
600
V
R
-3
10
-2
10
-1
10
0
10
1
10
2
10
A
I
R
150C
125C
100C
25C
8 Typ. C stored energy
E
C
=f(V
R
)
0
100
200
300
400
V
600
V
R
0
1
2
3
4
5
6
7
J
9
E
C
7 Typ. capacitance vs. reverse voltage
C= f(V
R
)
parameter: T
C
= 25 C, f = 1 MHz
10
0
10
1
10
2
10
3
V
V
R
0
50
100
150
200
250
300
350
400
450
500
pF
600
C
2002-01-1
4
Page
5
SDT12S60
SDT12S60
Preliminary data
9 Typ. capacitive charge vs. current slope
Q
c
=f(di
F
/dt
)
parameter: T
j
= 150 C
100 200 300 400 500 600 700 80
0
A/s
1000
di
F
/dt
0
4
8
12
16
20
24
28
32
nC
40
Q
c
IF *2
IF *0.5
IF
2002-01-14
Page 6
SDT12S60
SDT12S60
Preliminary data
TO-220-2-2
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.10
0.3819
0.3976
B
15.30
15.90
0.6024
0.6260
C
0.65
0.85
0.0256
0.0335
D
3.55
3.85
0.1398
0.1516
E
2.60
3.00
0.1024
0.1181
F
9.00
9.40
0.3543
0.3701
G
13.00
14.00
0.5118
0.5512
H
17.20
17.80
0.6772
0.7008
J
4.40
4.80
0.1732
0.1890
K
0.40
0.60
0.0157
0.0236
L
M
N
P
1.10
1.40
0.0433
0.0551
T
U
V
W
X
0.00
0.40
0.0000
0.0157
0.26 typ.
6.6 typ.
0.51 typ.
13.0 typ.
7.5 typ.
0.295 typ.
2.4 typ.
0.095 typ.
4.4 typ.
0.173 typ.
2.54 typ.
0.1 typ.
dimensions
0.41 typ.
1.05 typ.
A
U
V
W
G
M
T
J
F
L
X
P
D
C
K
N
B
H
E
2002-01-14
Page 7
SDT12S60
SDT12S60
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
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