IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
1
Rev. 2, Mar-04
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=3A
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Package Ordering
Code
IGW03N120H2 1200V 3A 0.15mJ 150
C
P-TO-247 Q67040-S4596
IGP03N120H2 1200V 3A 0.15mJ 150C
P-TO-220-3-1
Q67040-S4599
IGB03N120H2 1200V 3A 0.15mJ 150C
P-TO-263
(D
2
PAK) Q67040-S4598
Maximum Ratings
Parameter Symbol
Value
Unit
Collector-emitter voltage
V
C E
1200
V
Triangular collector current
T
C
= 25
C,
f
= 140kHz
T
C
= 100
C,
f
= 140kHz
I
C
9.6
3.9
Pulsed collector current,
t
p
limited by
T
jmax
I
C p u l s
9.9
Turn off safe operating area
V
CE
1200V,
T
j
150
C
-
9.9
A
Gate-emitter voltage
V
G E
20
V
Power dissipation
T
C
= 25
C
P
t o t
62.5
W
Operating junction and storage temperature
T
j
,
T
s t g
-40...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
225 (for SMD)
C
G
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D-PAK)
(TO-263AB)
P-TO-247-3-1
(TO-247AC)
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
2
Rev. 2, Mar-04
Thermal Resistance
Parameter Symbol
Conditions
Max.
Value
Unit
Characteristic
IGBT thermal resistance,
junction case
R
t h J C
2.0
Thermal resistance,
junction ambient
R
t h J A
P-TO-220-3-1
P-TO-247-3-1
62
SMD version, device on PCB
1)
R
t h J A
P-TO-263
(D
2
PAK) 40
K/W
Electrical Characteristic,
at
T
j
= 25
C, unless otherwise specified
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
( B R ) C E S
V
G E
=0V,
I
C
=300
A
1200 -
-
Collector-emitter saturation voltage
V
C E ( s a t )
V
G E
= 15V,
I
C
=3A
T
j
=25
C
T
j
=150
C
V
G E
= 10V,
I
C
=3A,
T
j
=25
C
-
-
-
2.2
2.5
2.4
2.8
-
-
Gate-emitter threshold voltage
V
G E ( t h )
I
C
=90
A,
V
C E
=
V
G E
2.1 3 3.9
V
Zero gate voltage collector current
I
C E S
V
C E
=1200V,
V
G E
=0V
T
j
=25
C
T
j
=150
C
-
-
-
-
20
80
A
Gate-emitter leakage current
I
G E S
V
C E
=0V,
V
G E
=20V
- - 100
nA
Transconductance
g
f s
V
C E
=20V,
I
C
=3A
- 2 -
S
Dynamic Characteristic
Input capacitance
C
i s s
-
205
-
Output capacitance
C
o s s
- 24 -
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
G E
=0V,
f
=1MHz
- 7 -
pF
Gate charge
Q
G a t e
V
C C
=960V,
I
C
=3A
V
G E
=15V
- 22 -
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
P-TO-220-3-1
P-TO-247-3-1
-
7
13
-
nH
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for
collector connection. PCB is vertical without blown air.
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
3
Rev. 2, Mar-04
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Value
Parameter Symbol
Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
9.2
-
Rise time
t
r
-
5.2
-
Turn-off delay time
t
d ( o f f )
-
281
-
Fall time
t
f
- 29 -
ns
Turn-on energy
E
o n
-
0.14
-
Turn-off energy
E
o f f
-
0.15
-
Total switching energy
E
t s
T
j
=25
C,
V
C C
=800V,
I
C
=3A,
V
G E
=15V/0V,
R
G
=82
,
L
2 )
=180nH,
C
2 )
=40pF
Energy losses include
"tail" and diode
3)
reverse recovery.
- 0.29 -
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Value
Parameter Symbol
Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
9.4
-
Rise time
t
r
-
6.7
-
Turn-off delay time
t
d ( o f f )
-
340
-
Fall time
t
f
- 63 -
ns
Turn-on energy
E
o n
-
0.22
-
Turn-off energy
E
o f f
-
0.26
-
Total switching energy
E
t s
T
j
=150
C
V
C C
=800V,
I
C
=3A,
V
G E
=15V/0V,
R
G
=82
,
L
2 )
=180nH,
C
2 )
=40pF
Energy losses include
"tail" and diode
3)
reverse recovery.
- 0.48 -
mJ
Switching Energy ZVT, Inductive Load
Value
Parameter Symbol
Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-off energy
E
o f f
V
C C
=800V,
I
C
=3A,
V
G E
=15V/0V,
R
G
=82
,
C
r
2 )
=4nF
T
j
=25
C
T
j
=150
C
-
-
0.05
0.09
-
-
mJ
2)
Leakage inductance L
and stray capacity C
due to dynamic test circuit in figure E
3)
Commutation diode from device IKP03N120H2
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
4
Rev. 2, Mar-04
I
C
,
COL
L
E
C
T
O
R C
URR
EN
T
10Hz
100Hz
1kHz
10kHz
100kHz
0A
2A
4A
6A
8A
10A
12A
T
C
=110C
T
C
=80C
I
C
,
COL
L
E
C
T
O
R C
URR
EN
T
1V
10V
100V
1000V
,01A
0,1A
1A
10A
100
s
DC
500
s
10
s
5
s
50
s
t
p
=1
s
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(
T
j
150
C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
)
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
C,
T
j
150
C)
P
tot
,
PO
W
E
R
D
I
S
S
I
PATI
O
N
25C
50C
75C
100C
125C
0W
10W
20W
30W
40W
50W
60W
I
C
,
C
O
LL
EC
T
O
R CU
RR
E
N
T
25C
50C
75C
100C
125C
150C
0A
2A
4A
6A
8A
10A
12A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(
T
j
150
C)
Figure 4. Collector current as a function of
case temperature
(
V
GE
15V,
T
j
150
C)
I
c
I
c
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
5
Rev. 2, Mar-04
I
C
,
COL
L
E
C
T
O
R
C
URR
EN
T
0V
1V
2V
3V
4V
5V
0A
2A
4A
6A
8A
10A
12V
10V
8V
6V
V
GE
=15V
I
C
,
COL
L
E
C
T
O
R
C
URR
EN
T
0V
1V
2V
3V
4V
5V
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
12V
10V
8V
6V
V
GE
=15V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(
T
j
= 25
C)
Figure 6. Typical output characteristics
(
T
j
= 150
C)
I
C
,
COL
L
E
C
T
O
R
C
URR
EN
T
3V
5V
7V
9V
0A
2A
4A
6A
8A
10A
12A
T
j
=+150C
T
j
=+25C
V
CE
(sat)
,
C
O
LLE
CT
OR
-
E
M
I
T
TE
R SA
TURA
T
I
O
N
VO
LTAGE
-50C
0C
50C
100C
150C
0V
1V
2V
3V
I
C
=6A
I
C
=3A
I
C
=1.5A
V
GE
,
GATE
-
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(
V
CE
= 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
6
Rev. 2, Mar-04
t
,
SWIT
C
H
I
N
G T
I
ME
S
0A
2A
4A
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
t
,
SWIT
C
H
I
N
G T
I
ME
S
0
50
100
150
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
,
dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
dynamic test circuit in Fig.E)
t
,
S
W
IT
C
H
ING TIMES
25C
50C
75C
100C 125C 150C
1ns
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
V
GE(th
)
,
GA
T
E
-
E
M
ITTE
R
T
HRES
H
O
L
D
VO
L
T
AG
E
-50C
0C
50C
100C
150C
0V
1V
2V
3V
4V
5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
R
G
= 82
,
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.09mA)
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
7
Rev. 2, Mar-04
E
,
S
W
IT
C
H
ING E
N
E
R
GY
L
O
S
SES
0A
2A
4A
0.0mJ
0.5mJ
1.0mJ
E
on
1
E
off
E
ts
1
E
,
S
W
IT
C
H
ING E
N
E
R
GY
L
O
S
SES
0
50
100
150
200
250
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJ
E
on
1
E
ts
1
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
dynamic test circuit in Fig.E )
E
,
SWI
T
C
H
I
N
G
EN
ER
G
Y
L
O
S
S
E
S
25C
80C
125C
150C
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
E
ts
1
E
on
1
E
off
E
off
,
T
UR
N
OFF
SW
I
T
CHING
EN
E
R
G
Y
L
O
SS
0V/us
1000V/us
2000V/us
3000V/us
0.00mJ
0.04mJ
0.08mJ
0.12mJ
0.16mJ
I
C
=1A,
T
J
=150C
I
C
=1A,
T
J
=25C
I
C
=3A,
T
J
=150C
I
C
=3A,
T
J
=25C
T
j
,
JUNCTION TEMPERATURE
dv/dt
, VOLTAGE
SLOPE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
R
G
= 82
,
dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching
(
dynamic test circuit in Fig. E
)
1
)
E
on
and
E
ts
include losses
due to diode recovery.
1
)
E
on
and
E
ts
include losses
due to diode recovery.
1
)
E
on
and
E
ts
include losses
due to diode recovery.
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
8
Rev. 2, Mar-04
V
GE
,
GA
T
E
-
E
M
I
T
TE
R
VO
L
T
AGE
1s
10s
100s
1ms
10ms
100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
V
GE
,
GA
T
E
-
E
M
I
T
TE
R
VO
L
T
AGE
0nC
10nC
20nC
30nC
0V
5V
10V
15V
20V
U
CE
=240V
U
CE
=960V
Q
GE
,
GATE CHARGE
Q
GE
,
GATE CHARGE
Figure 17. Typical gate charge
(
I
C
= 3A)
Figure 17. Typical gate charge
(
I
C
= 3A)
C
,
CAP
A
CI
T
A
N
C
E
0V
10V
20V
30V
10pF
100pF
1nF
C
rss
C
oss
C
iss
V
CE
,
COL
L
E
C
T
O
R
-
E
M
I
TTE
R VO
LTAG
E
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0V
200V
400V
600V
800V
1000V
0A
1A
2A
3A
I
CE
COLL
E
C
T
O
R
C
UR
R
E
NT
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
t
p
,
PULSE WIDTH
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
Figure 20. Typical turn off behavior, hard
switching
(V
GE
=15/0V,
R
G
=82,
T
j
= 150
C,
Dynamic test circuit in Figure E)
R
, ( K / W )
,
( s )
1.082517 0.000795
0.328671 0.000179
0.588811 0.004631
C
1
=
1
/
R
1
R
1
R
2
C
2
=
2
/
R
2
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
9
Rev. 2, Mar-04
V
GE
,
GAT
E
-
E
M
I
T
T
E
R VO
LTAG
E
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
0V
200V
400V
600V
800V
0A
1A
2A
3A
I
CE
CO
L
L
E
C
TOR
C
U
RRE
NT
t
p
,
PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
(V
GE
=15/0V,
R
G
=82,
T
j
= 150
C,
Dynamic test circuit in Figure E)
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
10
Rev. 2, Mar-04
dimensions
symbol
[mm] [inch]
min max min max
A 9.70
10.30
0.3819
0.4055
B 14.88
15.95
0.5858
0.6280
C 0.65
0.86
0.0256
0.0339
D 3.55
3.89
0.1398
0.1531
E 2.60
3.00
0.1024
0.1181
F 6.00
6.80
0.2362
0.2677
G 13.00
14.00
0.5118
0.5512
H 4.35
4.75
0.1713
0.1870
K 0.38
0.65
0.0150
0.0256
L 0.95
1.32
0.0374
0.0520
M
2.54 typ.
0.1 typ.
N 4.30
4.50
0.1693
0.1772
P 1.17
1.40
0.0461
0.0551
T 2.30
2.72
0.0906
0.1071
TO-220AB
dimensions
symbol
[mm] [inch]
min max min max
A 9.80
10.20
0.3858
0.4016
B 0.70
1.30
0.0276
0.0512
C 1.00
1.60
0.0394
0.0630
D 1.03
1.07
0.0406
0.0421
E
2.54 typ.
0.1 typ.
F 0.65
0.85
0.0256
0.0335
G
5.08 typ.
0.2 typ.
H 4.30
4.50
0.1693
0.1772
K 1.17
1.37
0.0461
0.0539
L 9.05
9.45
0.3563
0.3720
M 2.30
2.50
0.0906
0.0984
N
15 typ.
0.5906 typ.
P 0.00
0.20
0.0000
0.0079
Q 4.20
5.20
0.1654
0.2047
R
8 max
8 max
S 2.40
3.00
0.0945
0.1181
T 0.40
0.60
0.0157
0.0236
U 10.80
0.4252
V 1.15
0.0453
W 6.23
0.2453
X 4.60
0.1811
Y 9.40
0.3701
TO-263AB (D
2
Pak)
Z 16.15 0.6358
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
11
Rev. 2, Mar-04
dimensions
symbol
[mm]
symbol
min min
A 4.78 A 4.78 A
B 2.29 B 2.29 B
C 1.78 C 1.78 C
D 1.09 D 1.09 D
E 1.73
E
F 2.67 F 2.67 F
G 0.76
max
G 0.76
max G
H 20.80 H 20.80 H
K 15.65 K 15.65 K
L 5.21 L 5.21 L
M 19.81 M 19.81 M
N 3.560 N 3.560 N
P
3.61
P
3.61
P
Q 6.12 Q 6.12 Q
dimensi
ons
dimensi
ons
symbol
[mm]
symbol
[mm]
symbol
min min
TO-247AC
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
12
Rev. 2, Mar-04
Figure A. Definition of switching times
I
r r m
90%
I
r r m
10%
I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q
Q
r r
S
F
+
t =t
t
r r
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
j
1
1
2
2
n
n
T
C
r
r
r
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
= 180nH,
Stray capacitor C
= 40pF,
Relief capacitor C
r
= 4nF (only for
ZVT switching)
Figure B. Definition of switching losses
V
DC
DUT
(Diode)
L
R
G
DUT
(IGBT)
L
L
C
C
r
IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
13
Rev. 2, Mar-04
Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
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