www.docs.chipfind.ru
2004-03-18
Rev. 2.0
Page 1
SDT08S60
SDT08S60
thinQ!
SiC Schottky Diode
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
V
RRM
600
V
Q
c
24
nC
I
F
8
A
P-TO220-2-2.
Pin 1
Pin 2
C
A
Type
Package
Ordering Code
SDT08S60
P-TO220-2-2.
Q67040S4647
Marking
D08S60
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous forward current,
T
C
=100C
I
F
8
A
RMS forward current
,
f
=50Hz
I
FRMS
11.3
Surge non repetitive forward current, sine halfwave
T
C
=25C, t
p
=10ms
I
FSM
26
Repetitive peak forward current
T
j
=150C, T
C
=100C, D=0.1
I
FRM
32
Non repetitive peak forward current
t
p
=10s, T
C
=25C
I
FMAX
80
i
2
t value
,
T
C
=25C, t
p
=10ms
i
2
dt
3.4
As
Repetitive peak reverse voltage
V
RRM
600
V
Surge peak reverse voltage
V
RSM
600
Power dissipation
,
T
C
=25C
P
tot
65
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
C
2004-03-18
Rev. 2.0
Page 2
SDT08S60
SDT08S60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.3
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Diode forward voltage
I
F
=8A, T
j
=25C
I
F
=8A, T
j
=150C
V
F
-
-
1.5
1.7
1.7
2.1
V
Reverse current
V
R
=600V, T
j
=25C
V
R
=600V, T
j
=150C
I
R
-
-
28
70
300
1500
A
2004-03-18
Rev. 2.0
Page 3
SDT08S60
SDT08S60
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Total capacitive charge
V
R
=400V, I
F
=8A, di
F
/dt
=200A/s, T
j
=150C
Q
c
-
24
-
nC
Switching time
V
R
=400V, I
F
=8A, di
F
/dt
=200A/s, T
j
=150C
t
rr
-
n.a
-
ns
Total capacitance
V
R
=0V, T
C
=25C, f=1MHz
V
R
=300V, T
C
=25C, f=1MHz
V
R
=600V, T
C
=25C, f=1MHz
C
-
-
-
280
26
18
-
-
-
pF
2004-03-18
Rev. 2.0
Page 4
SDT08S60
SDT08S60
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80 100 120 140 160
C
190
T
C
0
5
10
15
20
25
30
35
40
45
50
55
60
W
70
SDT08S60
P
tot
2 Diode forward current
I
F
= f (T
C
)
parameter: T
j
175 C
0
20
40
60
80
100 120 140
C
180
T
C
0
1
2
3
4
5
6
7
A
9
I
F
4 Typ. forward power dissipation vs.
average forward current
P
F(AV)=f(I
F
)
T
C
=100C, d = t
p
/T
0
2
4
6
8
10
12
A
16
I
F(AV)
0
4
8
12
16
20
24
28
W
36
P
F(AV)
d=1
d=0,5
d=0,2
d=0,1
3 Typ. forward characteristic
I
F
= f (V
F
)
parameter: Tj , t
p
= 350 s
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
V
2.5
V
F
0
2
4
6
8
10
12
A
16
I
F
150C
125C
100C
25C
-40C
2004-03-18
Rev. 2.0
Page 5
SDT08S60
SDT08S60
5 Typ. reverse current vs. reverse voltage
I
R
=f(V
R
)
100 150 200 250 300 350 400 450 500
V
600
V
R
-3
10
-2
10
-1
10
0
10
1
10
2
10
A
I
R
150C
125C
100C
25C
6 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SDT08S60
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
7 Typ. capacitance vs. reverse voltage
C= f(V
R
)
parameter: T
C
= 25 C, f = 1 MHz
10
0
10
1
10
2
10
3
V
V
R
0
20
40
60
80
100
120
140
160
180
200
220
240
pF
300
C
8 Typ. C stored energy
E
C
=f(V
R
)
0
100
200
300
400
V
600
V
R
0
0.5
1
1.5
2
2.5
3
3.5
4
J
5
E
C
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