SPW35N60C3
CoolMOS
TM
Power Transistor
Features
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv /dt rated
Ultra low effective capacitances
Improved transconductance
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 C
A
T
C
=100 C
Pulsed drain current
1)
I
D,pulse
T
C
=25 C
Avalanche energy, single pulse
E
AS
I
D
=17.3 A, V
DD
=50 V
1500
mJ
Avalanche energy, repetitive t
AR
1),2)
E
AR
I
D
=34.6 A, V
DD
=50 V
Avalanche current, repetitive t
AR
1)
I
AR
A
Drain source voltage slope
dv /dt
I
D
=34.6 A,
V
DS
=480 V, T
j
=125 C
V/ns
Gate source voltage
V
GS
static
V
V
GS
AC (f >1 Hz)
Power dissipation
P
tot
T
C
=25 C
W
Operating and storage temperature
T
j
, T
stg
C
20
30
313
-55 ... 150
1.5
34.6
50
Value
34.6
21.9
103.8
V
DS
@ T
j,max
650
V
R
DS(on),max
0.1
I
D
34.6
A
Product Summary
Type
Package
Ordering Code
Marking
SPW35N60C3
P-TO247
Q67040-S4673
35N60C3
P-TO247
Rev. 1.0
page 1
2004-05-10
SPW35N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.4
K/W
R
thJA
leaded
-
-
62
Soldering temperature
T
sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
C
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 A
600
-
-
V
Avalanche breakdown voltage
V
(BR)DS
V
GS
=0 V, I
D
=34.6 A
-
700
-
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=1.9 mA
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600 V, V
GS
=0 V,
T
j
=25 C
-
0.1
1
A
V
DS
=600 V, V
GS
=0 V,
T
j
=150 C
-
-
100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=21.9 A,
T
j
=25 C
-
0.081
0.1
V
GS
=10 V, I
D
=21.9 A,
T
j
=150 C
-
0.2
-
Gate resistance
R
G
f =1 MHz, open drain
-
0.6
-
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=21.9 A
-
36
-
S
Values
Thermal resistance, junction -
ambient
Rev. 1.0
page 2
2004-05-10
SPW35N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
4500
-
pF
Output capacitance
C
oss
-
1500
-
Reverse transfer capacitance
C
rss
-
100
-
Effective output capacitance, energy
related
3)
C
o(er)
-
180
-
Effective output capacitance, time
related
4)
C
o(tr)
-
324
-
Turn-on delay time
t
d(on)
-
10
-
ns
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
70
-
Fall time
t
f
-
10
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
18
-
nC
Gate to drain charge
Q
gd
-
70
-
Gate charge total
Q
g
-
150
200
Gate plateau voltage
V
plateau
-
5.3
-
V
4)
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=480 V,
V
GS
=10 V, I
D
=34.6 A,
R
G
=3.3
V
DD
=480 V,
I
D
=34.6 A,
V
GS
=0 to 10 V
V
GS
=0 V, V
DS
=0 V
to 480 V
1)
Pulse width limited by maximum temperature T
j,max
only
2)
Repetitive avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3)
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Rev. 1.0
page 3
2004-05-10
SPW35N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Reverse Diode
Diode continuous forward current
I
S
-
-
34.6
A
Diode pulse current
I
S,pulse
-
-
103.8
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=34.6 A,
T
j
=25 C
-
0.95
1.2
V
Reverse recovery time
t
rr
-
600
-
ns
Reverse recovery charge
Q
rr
-
21
-
C
Peak reverse recovery current
I
rrm
-
90
-
A
Typical Transient Thermal Characteristics
V
R
=480 V, I
F
=I
S
,
di
F
/dt =100 A/s
T
C
=25 C
Values
5)
C
th6
models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R
thCA
=0 K/W.
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
R
th1
0.00441
K/W
C
th1
0.00037
Ws/K
R
th2
0.00608
C
th2
0.00223
R
th3
0.0341
C
th3
0.00315
R
th4
0.0602
C
th4
0.0179
R
th5
0.0884
C
th5
0.098
C
th6
4.4
5)
Rev. 1.0
page 4
2004-05-10
SPW35N60C3
1 Power dissipation
2 Safe operating area
P
tot
=f(T
C
)
I
D
=f(V
DS
); T
C
=25 C; D =0
parameter: t
p
3 Max. transient thermal impedance
4 Typ. output characteristics
I
D
=f(V
DS
); T
j
=25 C
I
D
=f(V
DS
); T
j
=25 C
parameter: D=t
p
/T
parameter: V
GS
0
100
200
300
400
0
40
80
120
160
T
C
[C]
P
tot
[W]
1 s
10 s
100 s
1 ms
10 ms
DC
10
3
10
2
10
1
10
0
10
3
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
20
40
60
80
100
0
5
10
15
20
V
DS
[V]
I
D
[A]
Rev. 1.0
page 5
2004-05-10
SPW35N60C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
=f(V
DS
); T
j
=150 C
R
DS(on)
=f(I
D
); T
j
=150 C
parameter: V
GS
parameter: V
GS
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R
DS(on)
=f(T
j
); I
D
=21.9 A; V
GS
=10 V
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter: T
j
4 V
4.5 V
5 V
5.5 V
6 V
20 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
10
20
30
40
50
60
I
D
[A]
R
D
S
(on)
[
]
typ
98 %
0
0.05
0.1
0.15
0.2
0.25
0.3
-60
-20
20
60
100
140
180
T
j
[C]
R
D
S
(on)
[
]
25 C
150 C
0
20
40
60
80
100
0
2
4
6
8
10
V
GS
[V]
I
D
[A]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
10
20
30
40
50
60
0
5
10
15
20
V
DS
[V]
I
D
[A]
Rev. 1.0
page 6
2004-05-10
SPW35N60C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V
GS
=f(Q
gate
); I
D
=34.6 A pulsed
I
F
=f(V
SD
)
parameter: V
DD
parameter: T
j
11 Avalanche SOA
12 Avalanche energy
I
AR
=f(t
AR
)
E
AS
=f(T
j
); I
D
=17.3 A; V
DD
=50 V
parameter: T
j(start)
0
400
800
1200
1600
20
60
100
140
180
T
j
[C]
E
AS
[mJ]
25 C
150 C
25 C, 98%
150 C, 98%
10
3
10
2
10
1
10
0
10
-1
0
0.5
1
1.5
2
2.5
V
SD
[V]
I
F
[A]
125 C
25 C
10
3
10
2
10
1
10
0
10
-1
10
-2
10
-3
0
10
20
30
40
t
AR
[s]
I
AV
[A]
120 V
480 V
0
2
4
6
8
10
12
0
50
100
150
200
Q
gate
[nC]
V
GS
[V
]
Rev. 1.0
page 7
2004-05-10
SPW35N60C3
13 Drain-source breakdown voltage
14 Typ. capacitances
V
BR(DSS)
=f(T
j
); I
D
=0.25 mA
C =f(V
DS
); V
GS
=0 V; f =1 MHz
15 Typ. C
oss
stored energy
E
oss
= f(V
DS
)
540
580
620
660
700
-60
-20
20
60
100
140
180
T
j
[C]
V
BR(
DSS)
[V]
Ciss
Coss
Crss
10
5
10
4
10
3
10
2
10
1
0
100
200
300
400
500
V
DS
[V]
C
[pF]
0
5
10
15
20
25
30
0
100
200
300
400
500
600
V
DS
[V]
E
os
s
[J]
Rev. 1.0
page 8
2004-05-10
SPW35N60C3
Definition of diode switching characteristics
P-TO247: Outline
Dimensions in mm
Rev. 1.0
page 9
2004-05-10
SPW35N60C3
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strae 53
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 10
2004-05-10
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